PL377151A1 - Sposób otrzymywania objętościowego monokrystalicznego azotku, zawierającego gal - Google Patents

Sposób otrzymywania objętościowego monokrystalicznego azotku, zawierającego gal

Info

Publication number
PL377151A1
PL377151A1 PL377151A PL37715103A PL377151A1 PL 377151 A1 PL377151 A1 PL 377151A1 PL 377151 A PL377151 A PL 377151A PL 37715103 A PL37715103 A PL 37715103A PL 377151 A1 PL377151 A1 PL 377151A1
Authority
PL
Poland
Prior art keywords
nitride
gallium
monocrystallline
bulk
obtaining
Prior art date
Application number
PL377151A
Other languages
English (en)
Other versions
PL225422B1 (pl
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL354740A external-priority patent/PL205838B1/pl
Priority claimed from PL357697A external-priority patent/PL232212B1/pl
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL377151A priority Critical patent/PL225422B1/pl
Publication of PL377151A1 publication Critical patent/PL377151A1/pl
Publication of PL225422B1 publication Critical patent/PL225422B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Wynalazek obecny dotyczy nowych udoskonaleń w procesie wzrostu kryształów w środowisku nadkrytycznego roztworu zawierającego amoniak, opartych na wykorzystaniu szczególnych mineralizatorów azydkowych i prowadzących do lepszych objętościowych monokryształów azotku pierwiastka Grupy XIII, w szczególności objętościowego monokrystalicznego azotku zawierającego gal, przeznaczonego głównie do różnorodnych zastosowań w opartych na azotkach produktach półprzewodnikowych, takich jak różne urządzenia opto-elektroniczne. Wynalazek dotyczy ponadto mineralizatora stosowanego w nadkrytycznym roztworze zawierającym amoniak, który zawiera co najmniej jeden związek wybrany spośród LiN3, NaN3, KN3 oraz CsN3.
PL377151A 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal PL225422B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
PLP-354740 2002-06-26
PL354740A PL205838B1 (pl) 2002-06-26 2002-06-26 Podłoże do epitaksji
PLP-357697 2002-12-11
PL357697A PL232212B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal
PCT/PL2003/000040 WO2004003261A1 (en) 2002-06-26 2003-04-17 Process for obtaining of bulk monocrystallline gallium-containing nitride

Publications (2)

Publication Number Publication Date
PL377151A1 true PL377151A1 (pl) 2006-01-23
PL225422B1 PL225422B1 (pl) 2017-04-28

Family

ID=30002432

Family Applications (1)

Application Number Title Priority Date Filing Date
PL377151A PL225422B1 (pl) 2002-06-26 2003-04-17 Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal

Country Status (8)

Country Link
US (1) US7364619B2 (pl)
EP (1) EP1518009B1 (pl)
JP (1) JP4663319B2 (pl)
KR (1) KR100971851B1 (pl)
CN (1) CN100339512C (pl)
AU (1) AU2003238980A1 (pl)
PL (1) PL225422B1 (pl)
WO (1) WO2004003261A1 (pl)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100453710C (zh) * 2001-06-06 2009-01-21 波兰商艾蒙诺公司 获得整体单晶性含镓氮化物的方法及装置
PL207400B1 (pl) * 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
JP4693351B2 (ja) 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
KR100679377B1 (ko) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
US7335262B2 (en) * 2002-05-17 2008-02-26 Ammono Sp. Z O.O. Apparatus for obtaining a bulk single crystal using supercritical ammonia
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003098757A1 (en) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
US7811380B2 (en) * 2002-12-11 2010-10-12 Ammono Sp. Z O.O. Process for obtaining bulk mono-crystalline gallium-containing nitride
PL224992B1 (pl) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Podłoże typu template dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4276020B2 (ja) * 2003-08-01 2009-06-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2005095681A1 (ja) * 2004-03-31 2005-10-13 Matsushita Electric Industrial Co., Ltd. Iii族元素窒化物結晶の製造方法、それに用いる製造装置、およびそれらにより得られた半導体素子
JP4579294B2 (ja) * 2004-06-11 2010-11-10 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法
JP5014804B2 (ja) 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7558631B2 (en) * 2004-12-21 2009-07-07 Ebr Systems, Inc. Leadless tissue stimulation systems and methods
WO2007008198A1 (en) 2005-07-08 2007-01-18 The Regents Of The University Of California Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave
US8039412B2 (en) 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US7935382B2 (en) 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
KR101351498B1 (ko) 2005-12-20 2014-01-15 모멘티브 퍼포먼스 머티리얼즈 인크. 결정성 조성물, 소자 및 관련 방법
WO2007084782A2 (en) 2006-01-20 2007-07-26 The Regents Of The University Of California Method for improved growth of semipolar (al,in,ga,b)n
US7803344B2 (en) * 2006-10-25 2010-09-28 The Regents Of The University Of California Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby
US8728234B2 (en) 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
US8476158B2 (en) 2006-06-14 2013-07-02 Sumitomo Electric Industries, Ltd. Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture
JP4714087B2 (ja) * 2006-06-14 2011-06-29 住友電気工業株式会社 ＧａＮ基板の保存方法、および半導体デバイスの製造方法
WO2007149487A2 (en) * 2006-06-21 2007-12-27 The Regents Of The University Of California Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
CN101522962A (zh) * 2006-10-16 2009-09-02 三菱化学株式会社 氮化物半导体的制造方法、结晶生长速度增加剂、氮化物单晶、晶片及器件
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
JP5118392B2 (ja) * 2007-06-08 2013-01-16 ローム株式会社 半導体発光素子およびその製造方法
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
WO2009149300A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
JP5536046B2 (ja) * 2008-06-05 2014-07-02 ソーラ インコーポレーション 窒化物結晶成長用の高圧装置及び結晶成長方法
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
EP2319086A4 (en) * 2008-08-04 2014-08-27 Soraa Inc WHITE LIGHTING DEVICES WITH NON POLAR OR SEMI-POLAR GALLIUM-HARDENED MATERIALS AND INFLUENCES
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US20100031873A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Basket process and apparatus for crystalline gallium-containing nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
JP2010105903A (ja) * 2008-08-21 2010-05-13 Mitsubishi Chemicals Corp 第１３族金属窒化物結晶の製造方法および半導体デバイスの製造方法
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
KR20110093853A (ko) * 2008-11-07 2011-08-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장에서의 사용을 위한 반응기 설계들
WO2010053960A1 (en) * 2008-11-07 2010-05-14 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals
US20110300051A1 (en) * 2008-11-07 2011-12-08 The Regents Of The University Of California Group-iii nitride monocrystal with improved purity and method of producing the same
KR20110097813A (ko) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장을 위한 신규한 용기 설계 및 소스 물질과 씨드 결정들의 상기 용기에 대한 상대적인 배치
KR20110097814A (ko) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장 동안 사용되는 질소­함유 용제에의 수소 및／또는 질소 함유 화합물들의 첨가
KR20110093857A (ko) * 2008-11-07 2011-08-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정의 암모노열 성장 동안의 ⅲ족 질화물 결정의 상이한 노출된 결정학적 파세트들의 상대적인 성장 속도들의 제어
WO2010060034A1 (en) 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
WO2010129718A2 (en) 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
EP2267197A1 (en) * 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
KR20140068793A (ko) 2010-10-29 2014-06-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 서로 간에 예각, 직각 또는 둔각을 이루는 적어도 2개의 표면들을 가진 시드들 상에서의 ⅲ-족 질화물 결정들의 암모니아 열적 성장
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
EP2724356B1 (en) 2011-06-27 2018-10-03 SixPoint Materials, Inc. Ultracapacitors with electrodes containing transition metal nitride
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
JP2013091596A (ja) * 2011-10-24 2013-05-16 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
EP3312310B1 (en) 2011-10-28 2021-12-15 Mitsubishi Chemical Corporation Gallium nitride crystal
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
JP6931827B2 (ja) 2017-04-07 2021-09-08 日本製鋼所Ｍ＆Ｅ株式会社 結晶製造用圧力容器
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
CN115104174A (zh) 2020-02-11 2022-09-23 Slt科技公司 改进的iii族氮化物衬底、制备方法和使用方法
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN112430848B (zh) * 2020-10-21 2021-09-28 北京工业大学 一种氮化物单晶生长装置及方法
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
EP4108812A1 (en) * 2021-06-24 2022-12-28 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing a lateral growth of crystals
CN115364780B (zh) * 2022-07-20 2024-01-26 西南科技大学 衍生二氧化钛/还原氧化石墨烯复合气凝胶的制备及应用

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137287A (ja) 1988-11-17 1990-05-25 Sanyo Electric Co Ltd 半導体レーザ装置
JPH07249830A (ja) 1994-03-10 1995-09-26 Hitachi Ltd 半導体発光素子の製造方法
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JP3830051B2 (ja) * 1995-09-18 2006-10-04 株式会社 日立製作所 窒化物半導体基板の製造方法、窒化物半導体基板、光半導体装置の製造方法および光半導体装置
JPH09134878A (ja) 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JPH107496A (ja) * 1996-06-25 1998-01-13 Hitachi Cable Ltd 窒化物結晶の製造方法およびその装置
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
PL184902B1 (pl) * 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
PL186905B1 (pl) * 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
PL183687B1 (pl) 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
TW519551B (en) * 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
JP3533938B2 (ja) * 1997-06-11 2004-06-07 日立電線株式会社 窒化物結晶の製造方法、混合物、液相成長方法、窒化物結晶、窒化物結晶粉末、および気相成長方法
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6249534B1 (en) * 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
FR2796657B1 (fr) * 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP2002016285A (ja) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP4154558B2 (ja) * 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
JP2002134416A (ja) * 2000-10-19 2002-05-10 Ricoh Co Ltd ｐ型３族窒化物の結晶成長方法および製造方法、並びに半導体素子
WO2002044444A1 (en) * 2000-11-30 2002-06-06 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP4633962B2 (ja) * 2001-05-18 2011-02-16 日亜化学工業株式会社 窒化物半導体基板の製造方法
CN100453710C (zh) * 2001-06-06 2009-01-21 波兰商艾蒙诺公司 获得整体单晶性含镓氮化物的方法及装置
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same

Also Published As

Publication number Publication date
CN100339512C (zh) 2007-09-26
US20060032428A1 (en) 2006-02-16
US7364619B2 (en) 2008-04-29
CN1681974A (zh) 2005-10-12
JP4663319B2 (ja) 2011-04-06
WO2004003261A1 (en) 2004-01-08
JP2005530674A (ja) 2005-10-13
AU2003238980A8 (en) 2004-01-19
KR100971851B1 (ko) 2010-07-23
KR20050016907A (ko) 2005-02-21
EP1518009B1 (en) 2013-07-17
EP1518009A1 (en) 2005-03-30
PL225422B1 (pl) 2017-04-28
AU2003238980A1 (en) 2004-01-19

Similar Documents

Publication Publication Date Title
PL377151A1 (pl) Sposób otrzymywania objętościowego monokrystalicznego azotku, zawierającego gal
Yonenaga Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe
Mustafa et al. Global existence of solutions with prescribed asymptotic behavior for second-order nonlinear differential equations
Adamcik et al. Measurement of intrinsic properties of amyloid fibrils by the peak force QNM method
WO2003048225A3 (de) Prozess zur herstellung von aryl-aryl gekoppelten verbindungen
NO20064288L (no) Tetraazabenzo(E)azulen-derivater og angaloger derav
CY1110234T1 (el) Κρυσταλλικη και καθαρη μοδαφινιλη, και διεργασια παρασκευης της ιδιας
PL407889A1 (pl) Przeciwciało przeciwko receptorowi insulinopodobnego czynnika wzrostu I, zawierająca go kompozycja farmaceutyczna, sposób jego wytwarzania, zastosowania, linia komórkowa, wyizolowana cząsteczka kwasu nukleinowego, wektor, komórka gospodarza oraz zwierzę trangeniczne
DE60206611D1 (de) Wasserlösliche behälter bestehend aus mindestens zwei abteilen
EP1590336A4 (en) SUBSTITUTED PYRAZOLE, COMPOSITIONS CONTAINING SUCH COMPOUNDS, AND APPLICATION METHOD
ATE381602T1 (de) Flüssigkristalline verbindungen
DE60125166D1 (de) Strangpressen von keramischen zusammensetsungen und keramische zusammensetsung dafür
TW200500381A (en) Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
WO2004110931A3 (en) Method for producing particulate alumina and composition containing particulate alumina
ATE414755T1 (de) Wenigstens teilweise aus achiral flüssigkristallinem material bestehende schuppen
DE60313211D1 (de) Flüssigkristallzusammensetzung zur verwendung in bistabilen flüssigkristallanzeigen
TW200732408A (en) Low impurity elastomeric material
PL357697A1 (pl) Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
ATE169060T1 (de) Lactobacillus sake ähnliche stämme herstellung und verwendung von deren exopolysacchariden
TW200622045A (en) Magnetic garnet single crystal and optical device using the same, and method of single crystal
WO2004007352A3 (en) Borate crystals for optical frequency conversion
TW200735182A (en) Zinc oxide-based compound semiconductor element
Dutta et al. Phonons in III–V nitrides: Confined phonons and interface phonons
HK1039341A1 (zh) α1β1合成(「α1β1」)I-领域的结晶体及其使用
DE602004030592D1 (de) Spinell-gegenstände