NO982518L - Skalerbar, integrert databehandlingsinnretning - Google Patents

Skalerbar, integrert databehandlingsinnretning

Info

Publication number
NO982518L
NO982518L NO982518A NO982518A NO982518L NO 982518 L NO982518 L NO 982518L NO 982518 A NO982518 A NO 982518A NO 982518 A NO982518 A NO 982518A NO 982518 L NO982518 L NO 982518L
Authority
NO
Norway
Prior art keywords
scalable
data processing
processing device
integrated data
integrated
Prior art date
Application number
NO982518A
Other languages
English (en)
Other versions
NO982518D0 (no
NO308149B1 (no
Inventor
Hans Gude Gudesen
Per-Erik Nordal
Geirr I Leistad
Original Assignee
Opticom As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19902102&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO982518(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Opticom As filed Critical Opticom As
Priority to NO982518A priority Critical patent/NO308149B1/no
Publication of NO982518D0 publication Critical patent/NO982518D0/no
Priority to NO985707A priority patent/NO985707L/no
Priority to AT99907966T priority patent/ATE377842T1/de
Priority to US09/381,995 priority patent/US6403396B1/en
Priority to RU2000122454/28A priority patent/RU2210834C2/ru
Priority to NO990421A priority patent/NO308388B1/no
Priority to AU27495/99A priority patent/AU733522B2/en
Priority to CA002319430A priority patent/CA2319430C/en
Priority to RU2000122445/28A priority patent/RU2183882C2/ru
Priority to DE69937485T priority patent/DE69937485T2/de
Priority to EP99907966A priority patent/EP1051745B1/en
Priority to KR10-2000-7008278A priority patent/KR100375864B1/ko
Priority to PCT/NO1999/000023 priority patent/WO1999045582A1/en
Priority to JP2000533897A priority patent/JP4272353B2/ja
Priority to KR10-2000-7008287A priority patent/KR100375392B1/ko
Priority to AU23032/99A priority patent/AU739848B2/en
Priority to EP99902942A priority patent/EP1051741A1/en
Priority to CNB998044903A priority patent/CN1187793C/zh
Priority to CNB998044377A priority patent/CN1171301C/zh
Priority to JP2000535041A priority patent/JP2002515641A/ja
Priority to PCT/NO1999/000022 priority patent/WO1999044229A1/en
Priority to US09/381,994 priority patent/US6432739B1/en
Priority to CA002319428A priority patent/CA2319428C/en
Priority to NO990420A priority patent/NO308389B1/no
Priority to RU2000133345/28A priority patent/RU2208267C2/ru
Priority to KR10-2000-7013650A priority patent/KR100392446B1/ko
Priority to CA002334287A priority patent/CA2334287C/en
Priority to JP2000555291A priority patent/JP3526552B2/ja
Priority to US09/463,900 priority patent/US6894392B1/en
Priority to AU40653/99A priority patent/AU766384B2/en
Priority to RU2000133239/28A priority patent/RU2201015C2/ru
Priority to CNB998092339A priority patent/CN1191626C/zh
Priority to EP99943493A priority patent/EP1088343A1/en
Priority to EP99924066A priority patent/EP1090389A1/en
Priority to NO19992684A priority patent/NO321961B1/no
Priority to US09/463,906 priority patent/US6787825B1/en
Priority to CNB998092932A priority patent/CN1146039C/zh
Priority to JP2000552664A priority patent/JP2002517896A/ja
Priority to AU56569/99A priority patent/AU754391B2/en
Priority to KR10-2000-7013651A priority patent/KR100423659B1/ko
Priority to PCT/NO1999/000181 priority patent/WO1999063527A2/en
Priority to PCT/NO1999/000180 priority patent/WO1999066551A1/en
Priority to CA002333973A priority patent/CA2333973C/en
Publication of NO982518L publication Critical patent/NO982518L/no
Publication of NO308149B1 publication Critical patent/NO308149B1/no
Priority to HK01106030A priority patent/HK1035602A1/xx
Priority to HK01106070A priority patent/HK1035438A1/xx
Priority to US09/978,043 priority patent/US6776806B2/en
Priority to HK02101534.9A priority patent/HK1040002B/zh
Priority to HK02102367.9A priority patent/HK1040824B/zh
Priority to JP2006089948A priority patent/JP2006253699A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
NO982518A 1998-01-28 1998-06-02 Skalerbar, integrert databehandlingsinnretning NO308149B1 (no)

Priority Applications (49)

Application Number Priority Date Filing Date Title
NO982518A NO308149B1 (no) 1998-06-02 1998-06-02 Skalerbar, integrert databehandlingsinnretning
NO985707A NO985707L (no) 1998-06-02 1998-12-04 Skalerbar datalagringsinnretning
AT99907966T ATE377842T1 (de) 1998-01-28 1999-01-28 Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode
US09/381,995 US6403396B1 (en) 1998-01-28 1999-01-28 Method for generation of electrically conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
RU2000122454/28A RU2210834C2 (ru) 1998-01-28 1999-01-28 Способ формирования электропроводящих и/или полупроводниковых трехмерных структур, способ уничтожения этих структур и генератор/модулятор электрического поля для использования в способе формирования
NO990421A NO308388B1 (no) 1998-01-28 1999-01-28 FremgangsmÕte til generering av elektrisk ledende og/eller halvledende strukturer i tre dimensjoner, samt fremgangsmÕter til sletting av de samme strukturer
AU27495/99A AU733522B2 (en) 1998-01-28 1999-01-28 A method for generating electrical conducting and/or semiconducting structures in three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
CA002319430A CA2319430C (en) 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
RU2000122445/28A RU2183882C2 (ru) 1998-01-28 1999-01-28 Способ формирования электропроводящих или полупроводниковых трехмерных структур и способы уничтожения этих структур
DE69937485T DE69937485T2 (de) 1998-01-28 1999-01-28 Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode
EP99907966A EP1051745B1 (en) 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
KR10-2000-7008278A KR100375864B1 (ko) 1998-01-28 1999-01-28 3차원 도전성 또는 반도전성 구조물을 형성하는 방법 및상기 구조물을 제거하는 방법
PCT/NO1999/000023 WO1999045582A1 (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
JP2000533897A JP4272353B2 (ja) 1998-01-28 1999-01-28 ３次元の導電構造体および／または半導電構造体を生成する方法、同構造体を消去する方法および生成する同方法と共に用いられる電界発生器／変調器
KR10-2000-7008287A KR100375392B1 (ko) 1998-01-28 1999-01-28 2차원 또는 3차원 구조의 도전성 및/또는 반도전성 구조를 형성 및 제거하는 방법과 상기 형성 방법에 사용되는 전계 발생기/변조기
AU23032/99A AU739848B2 (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
EP99902942A EP1051741A1 (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
CNB998044903A CN1187793C (zh) 1998-01-28 1999-01-28 制作导电或半导电三维结构的方法和擦除该结构的方法
CNB998044377A CN1171301C (zh) 1998-01-28 1999-01-28 产生和擦除导电和半导电结构的方法及电场发生器调制器
JP2000535041A JP2002515641A (ja) 1998-01-28 1999-01-28 三次元の導電性または半導電性構造体を生成する方法およびこの構造体を消去する方法
PCT/NO1999/000022 WO1999044229A1 (en) 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
US09/381,994 US6432739B1 (en) 1998-01-28 1999-01-28 Method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
CA002319428A CA2319428C (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
NO990420A NO308389B1 (no) 1998-01-28 1999-01-28 FremgangsmÕte til generering av elektrisk ledende og/eller halvledende strukturer i tre dimensjoner, fremgangsmÕte til sletting av de samme strukturer samt en elektrisk feltgenerator/modulator for bruk med fremgangsmÕten til generering
RU2000133345/28A RU2208267C2 (ru) 1998-06-02 1999-06-02 Устройство хранения и обработки данных и способ его изготовления
KR10-2000-7013650A KR100392446B1 (ko) 1998-06-02 1999-06-02 스케일가능 집적 데이터 처리 디바이스
CA002334287A CA2334287C (en) 1998-06-02 1999-06-02 Data storage and processing apparatus, and method for fabricating the same
JP2000555291A JP3526552B2 (ja) 1998-06-02 1999-06-02 拡張性集積データ処理装置
US09/463,900 US6894392B1 (en) 1998-06-02 1999-06-02 Scaleable integrated data processing device
AU40653/99A AU766384B2 (en) 1998-06-02 1999-06-02 Data storage and processing apparatus, and method for fabricating the same
RU2000133239/28A RU2201015C2 (ru) 1998-06-02 1999-06-02 Масштабируемое интегрированное устройство обработки данных
CNB998092339A CN1191626C (zh) 1998-06-02 1999-06-02 数据存储和处理装置及其制造方法
EP99943493A EP1088343A1 (en) 1998-06-02 1999-06-02 Scaleable integrated data processing device
EP99924066A EP1090389A1 (en) 1998-06-02 1999-06-02 Data storage and processing apparatus, and method for fabricating the same
NO19992684A NO321961B1 (no) 1998-06-02 1999-06-02 Datalagring og behandling av data, samt fremgangsmate til fremstilling av samme
US09/463,906 US6787825B1 (en) 1998-06-02 1999-06-02 Data storage and processing apparatus, and method for fabricating the same
CNB998092932A CN1146039C (zh) 1998-06-02 1999-06-02 可调节的集成数据处理设备
JP2000552664A JP2002517896A (ja) 1998-06-02 1999-06-02 データ記憶・処理装置、及びその製造方法
AU56569/99A AU754391B2 (en) 1998-06-02 1999-06-02 Scaleable integrated data processing device
KR10-2000-7013651A KR100423659B1 (ko) 1998-06-02 1999-06-02 데이터 저장 및 처리장치와 그 제조방법
PCT/NO1999/000181 WO1999063527A2 (en) 1998-06-02 1999-06-02 Data storage and processing apparatus, and method for fabricating the same
PCT/NO1999/000180 WO1999066551A1 (en) 1998-06-02 1999-06-02 Scaleable integrated data processing device
CA002333973A CA2333973C (en) 1998-06-02 1999-06-02 Scaleable integrated data processing device
HK01106030A HK1035602A1 (en) 1998-01-28 2001-08-27 A method for generation of electrial conducting orsemiconducting structures in three dimensions and methods for erasure of the same structures.
HK01106070A HK1035438A1 (en) 1998-01-28 2001-08-28 A method for generating a method for erasing electrical conducting or semiconducting structures, andan electric field generator/modulator.
US09/978,043 US6776806B2 (en) 1998-01-28 2001-10-17 Method for generating electrically conducting and/or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
HK02101534.9A HK1040002B (zh) 1998-06-02 2002-02-27 可調節的集成數據處理設備
HK02102367.9A HK1040824B (zh) 1998-06-02 2002-03-27 數據存儲和處理裝置及其製造方法
JP2006089948A JP2006253699A (ja) 1998-06-02 2006-03-29 データ記憶・演算装置、及びその製造方法

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NO982518D0 (no) 1998-06-02
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CA2334287A1 (en) 1999-12-09
CN1191626C (zh) 2005-03-02
CA2334287C (en) 2008-01-22
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AU4065399A (en) 1999-12-20
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AU754391B2 (en) 2002-11-14
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WO1999063527A2 (en) 1999-12-09
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US6894392B1 (en) 2005-05-17
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