NO20084573L - Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker - Google Patents

Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Info

Publication number
NO20084573L
NO20084573L NO20084573A NO20084573A NO20084573L NO 20084573 L NO20084573 L NO 20084573L NO 20084573 A NO20084573 A NO 20084573A NO 20084573 A NO20084573 A NO 20084573A NO 20084573 L NO20084573 L NO 20084573L
Authority
NO
Norway
Prior art keywords
semiconductor substrate
uneven structure
solar
etching
preparation
Prior art date
Application number
NO20084573A
Other languages
English (en)
Norwegian (no)
Inventor
Masato Tsuchiya
Ikuo Mashimo
Yoshimichi Kimura
Original Assignee
Space Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Space Energy Corp filed Critical Space Energy Corp
Publication of NO20084573L publication Critical patent/NO20084573L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
NO20084573A 2006-05-02 2008-11-03 Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker NO20084573L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006128453 2006-05-02
PCT/JP2007/058666 WO2007129555A1 (ja) 2006-05-02 2007-04-20 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

Publications (1)

Publication Number Publication Date
NO20084573L true NO20084573L (no) 2009-01-20

Family

ID=38667663

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084573A NO20084573L (no) 2006-05-02 2008-11-03 Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Country Status (9)

Country Link
US (1) US20090266414A1 (de)
EP (1) EP2015351A1 (de)
JP (1) JP4795430B2 (de)
KR (1) KR101010531B1 (de)
CN (1) CN101432855B (de)
MY (1) MY150000A (de)
NO (1) NO20084573L (de)
TW (1) TWI445073B (de)
WO (1) WO2007129555A1 (de)

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WO2009072438A1 (ja) * 2007-12-04 2009-06-11 Mimasu Semiconductor Industry Co., Ltd. 多結晶シリコン基板の製造方法及び多結晶シリコン基板
JP5302551B2 (ja) * 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
KR101168589B1 (ko) 2008-03-26 2012-07-30 엘지전자 주식회사 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
CN101792667A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种低张力ito蚀刻液
JP2011258767A (ja) * 2010-06-09 2011-12-22 Sharp Corp 太陽電池
KR20120015484A (ko) 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20120015485A (ko) * 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
JP5648392B2 (ja) * 2010-09-22 2015-01-07 凸版印刷株式会社 反射型フォトマスクブランクおよびその製造方法
WO2013055290A1 (en) * 2011-10-14 2013-04-18 Xu Shuyan Alkaline solution for texturing monocrystalline silicon substrate
WO2013089641A1 (en) * 2011-12-12 2013-06-20 Xu Shuyan Chemical texturing of monocrystalline silicon substrate
KR20130068759A (ko) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR20150020186A (ko) 2012-05-11 2015-02-25 와코 쥰야꾸 고교 가부시키가이샤 에칭액 및 이를 이용한 실리콘계 기판의 제조방법
WO2014010471A1 (ja) * 2012-07-09 2014-01-16 攝津製油株式会社 エッチング液、エッチング力回復剤、太陽電池用半導体基板の製造方法、及び太陽電池用半導体基板
JP6373271B2 (ja) * 2013-09-19 2018-08-15 攝津製油株式会社 半導体基板用エッチング液
US10106736B2 (en) 2014-10-21 2018-10-23 Settsu Oil Mill., Inc. Etching agent for semiconductor substrate
US20190214460A1 (en) * 2016-09-30 2019-07-11 Intel Corporation Fabricating nanowire transistors using directional selective etching
CN114792740B (zh) * 2022-03-25 2023-04-21 安徽华晟新能源科技有限公司 半导体衬底层的制备方法及太阳能电池的制备方法
CN115011348B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝蚀刻液及其应用

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FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
JPS58197717A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 半導体装置の製造方法
JP3188902B2 (ja) * 1992-04-09 2001-07-16 ワッカー・エヌエスシーイー株式会社 シリコンウエハのエッチング方法及びこれを用いるエッチング溶液
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JP3602323B2 (ja) * 1998-01-30 2004-12-15 三菱電機株式会社 太陽電池の製造方法
JP3695932B2 (ja) 1998-02-12 2005-09-14 三洋電機株式会社 凹凸基板の製造方法
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP2000277473A (ja) * 1999-03-24 2000-10-06 Mitsubishi Materials Silicon Corp シリコンウエーハの洗浄方法
JP3948890B2 (ja) 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
CN1284248C (zh) * 2000-10-06 2006-11-08 信越半导体株式会社 太阳能电池及其制造方法
JP3994390B2 (ja) * 2003-06-06 2007-10-17 株式会社Ｓｕｍｃｏ 半導体ウェーハ処理用のアルカリ溶液およびその製法
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
JP2005158759A (ja) * 2003-08-29 2005-06-16 Sumitomo Mitsubishi Silicon Corp シリコン体のアルカリ処理技術
CN1690120A (zh) * 2004-03-01 2005-11-02 三菱瓦斯化学株式会社 具有高减震能力的树脂组合物
KR100873432B1 (ko) 2004-10-28 2008-12-11 미마스 한도타이 고교 가부시키가이샤 반도체기판의 제조방법, 솔라용 반도체기판 및 에칭액
TWI244135B (en) * 2004-12-31 2005-11-21 Ind Tech Res Inst Method of making solar cell
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Also Published As

Publication number Publication date
US20090266414A1 (en) 2009-10-29
JPWO2007129555A1 (ja) 2009-09-17
EP2015351A1 (de) 2009-01-14
MY150000A (en) 2013-11-15
CN101432855B (zh) 2011-03-16
TW200807547A (en) 2008-02-01
KR20080104030A (ko) 2008-11-28
KR101010531B1 (ko) 2011-01-24
JP4795430B2 (ja) 2011-10-19
TWI445073B (zh) 2014-07-11
WO2007129555A1 (ja) 2007-11-15
CN101432855A (zh) 2009-05-13

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