NO20084573L - Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker - Google Patents
Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaeskerInfo
- Publication number
- NO20084573L NO20084573L NO20084573A NO20084573A NO20084573L NO 20084573 L NO20084573 L NO 20084573L NO 20084573 A NO20084573 A NO 20084573A NO 20084573 A NO20084573 A NO 20084573A NO 20084573 L NO20084573 L NO 20084573L
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor substrate
- uneven structure
- solar
- etching
- preparation
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000005530 etching Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 239000012530 fluid Substances 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 150000001735 carboxylic acids Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
Gitt er: en prosess for sikkert å produsere ved hjelp av en lav kostnad et halvledersubstrat med utmerket effektivitet ved fotoelektrisk omdannelse, og som har stabil etsningsrate og er pyramideformet, som er kapabel til å enhetlig danne en fin ujevn struktur med ønsket størrelse tilpasset for en solcelle på overflaten; et halvledersubstrat til en applikasjon for solenergisom har en enhetlig og fin pyramideformet ujevn struktur i et plan¸ og en etsningsløsning for å danne et halvledersubstrat som har en enhetlig og fint ujevn struktur, som har en høy stabilitet ved begynnende bruk. Prosessen består av etsning av et halvledersubstrat ved bruk av en alkalisk etsende løsning inneholdende i det minste en type valgt fra en gruppe bestående av karboksylsyrer som har et karbonnummer på1 til 12 og som har i det minste en karboksylgruppe i et molekyl, derav salter, og silikon, for dermed å danne en ujevn struktur på overflaten til halvleder substratet.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006128453 | 2006-05-02 | ||
PCT/JP2007/058666 WO2007129555A1 (ja) | 2006-05-02 | 2007-04-20 | 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液 |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20084573L true NO20084573L (no) | 2009-01-20 |
Family
ID=38667663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20084573A NO20084573L (no) | 2006-05-02 | 2008-11-03 | Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090266414A1 (no) |
EP (1) | EP2015351A1 (no) |
JP (1) | JP4795430B2 (no) |
KR (1) | KR101010531B1 (no) |
CN (1) | CN101432855B (no) |
MY (1) | MY150000A (no) |
NO (1) | NO20084573L (no) |
TW (1) | TWI445073B (no) |
WO (1) | WO2007129555A1 (no) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100269903A1 (en) * | 2007-12-04 | 2010-10-28 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate |
JP5302551B2 (ja) * | 2008-02-28 | 2013-10-02 | 林純薬工業株式会社 | シリコン異方性エッチング液組成物 |
KR101168589B1 (ko) | 2008-03-26 | 2012-07-30 | 엘지전자 주식회사 | 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법 |
DE102009060931A1 (de) * | 2009-12-23 | 2011-06-30 | Gebr. Schmid GmbH & Co., 72250 | Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten |
CN101792667A (zh) * | 2010-04-01 | 2010-08-04 | 江阴市江化微电子材料有限公司 | 一种低张力ito蚀刻液 |
JP2011258767A (ja) * | 2010-06-09 | 2011-12-22 | Sharp Corp | 太陽電池 |
KR20120015484A (ko) * | 2010-08-12 | 2012-02-22 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 |
KR20120015485A (ko) * | 2010-08-12 | 2012-02-22 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 |
JP5648392B2 (ja) * | 2010-09-22 | 2015-01-07 | 凸版印刷株式会社 | 反射型フォトマスクブランクおよびその製造方法 |
WO2013055290A1 (en) * | 2011-10-14 | 2013-04-18 | Xu Shuyan | Alkaline solution for texturing monocrystalline silicon substrate |
SG11201401172XA (en) * | 2011-12-12 | 2014-09-26 | Shuyan Xu | Chemical texturing of monocrystalline silicon substrate |
KR20130068759A (ko) * | 2011-12-16 | 2013-06-26 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
EP2849211A4 (en) | 2012-05-11 | 2015-07-08 | Wako Pure Chem Ind Ltd | LIQUID FLUID AND MANUFACTURING PROCESS FOR SILICONE-BASED SUBSTRATES THEREWITH |
WO2014010471A1 (ja) * | 2012-07-09 | 2014-01-16 | 攝津製油株式会社 | エッチング液、エッチング力回復剤、太陽電池用半導体基板の製造方法、及び太陽電池用半導体基板 |
WO2015041214A1 (ja) * | 2013-09-19 | 2015-03-26 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JPWO2016063881A1 (ja) | 2014-10-21 | 2017-08-31 | 攝津製油株式会社 | 半導体基板用エッチング液 |
US20190214460A1 (en) * | 2016-09-30 | 2019-07-11 | Intel Corporation | Fabricating nanowire transistors using directional selective etching |
CN114792740B (zh) * | 2022-03-25 | 2023-04-21 | 安徽华晟新能源科技有限公司 | 半导体衬底层的制备方法及太阳能电池的制备方法 |
CN115011348B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝蚀刻液及其应用 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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FR96065E (fr) * | 1967-11-01 | 1972-05-19 | Western Electric Co | Procédé de gravure précise de semiconducteurs. |
US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
JPS58197717A (ja) * | 1982-05-13 | 1983-11-17 | Toshiba Corp | 半導体装置の製造方法 |
JP3188902B2 (ja) * | 1992-04-09 | 2001-07-16 | ワッカー・エヌエスシーイー株式会社 | シリコンウエハのエッチング方法及びこれを用いるエッチング溶液 |
US5645737A (en) * | 1996-02-21 | 1997-07-08 | Micron Technology, Inc. | Wet clean for a surface having an exposed silicon/silica interface |
JP3602323B2 (ja) * | 1998-01-30 | 2004-12-15 | 三菱電機株式会社 | 太陽電池の製造方法 |
JP3695932B2 (ja) | 1998-02-12 | 2005-09-14 | 三洋電機株式会社 | 凹凸基板の製造方法 |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
JP2000277473A (ja) * | 1999-03-24 | 2000-10-06 | Mitsubishi Materials Silicon Corp | シリコンウエーハの洗浄方法 |
JP3948890B2 (ja) | 2000-08-09 | 2007-07-25 | 三洋電機株式会社 | 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法 |
JP3872428B2 (ja) * | 2000-10-06 | 2007-01-24 | 信越半導体株式会社 | 太陽電池の製造方法 |
JP3994390B2 (ja) * | 2003-06-06 | 2007-10-17 | 株式会社Sumco | 半導体ウェーハ処理用のアルカリ溶液およびその製法 |
JP3740138B2 (ja) * | 2003-06-25 | 2006-02-01 | 直江津電子工業株式会社 | テクスチャー形成用エッチング液 |
JP2005158759A (ja) * | 2003-08-29 | 2005-06-16 | Sumitomo Mitsubishi Silicon Corp | シリコン体のアルカリ処理技術 |
CN1690120A (zh) * | 2004-03-01 | 2005-11-02 | 三菱瓦斯化学株式会社 | 具有高减震能力的树脂组合物 |
KR100873432B1 (ko) | 2004-10-28 | 2008-12-11 | 미마스 한도타이 고교 가부시키가이샤 | 반도체기판의 제조방법, 솔라용 반도체기판 및 에칭액 |
TWI244135B (en) * | 2004-12-31 | 2005-11-21 | Ind Tech Res Inst | Method of making solar cell |
US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
-
2007
- 2007-04-20 KR KR1020087023601A patent/KR101010531B1/ko not_active IP Right Cessation
- 2007-04-20 WO PCT/JP2007/058666 patent/WO2007129555A1/ja active Application Filing
- 2007-04-20 JP JP2008514425A patent/JP4795430B2/ja not_active Expired - Fee Related
- 2007-04-20 US US12/296,648 patent/US20090266414A1/en not_active Abandoned
- 2007-04-20 EP EP07742101A patent/EP2015351A1/en not_active Withdrawn
- 2007-04-20 MY MYPI20084034A patent/MY150000A/en unknown
- 2007-04-20 CN CN2007800150524A patent/CN101432855B/zh not_active Expired - Fee Related
- 2007-04-27 TW TW096115130A patent/TWI445073B/zh not_active IP Right Cessation
-
2008
- 2008-11-03 NO NO20084573A patent/NO20084573L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
TWI445073B (zh) | 2014-07-11 |
MY150000A (en) | 2013-11-15 |
TW200807547A (en) | 2008-02-01 |
CN101432855A (zh) | 2009-05-13 |
JP4795430B2 (ja) | 2011-10-19 |
KR101010531B1 (ko) | 2011-01-24 |
JPWO2007129555A1 (ja) | 2009-09-17 |
US20090266414A1 (en) | 2009-10-29 |
CN101432855B (zh) | 2011-03-16 |
WO2007129555A1 (ja) | 2007-11-15 |
EP2015351A1 (en) | 2009-01-14 |
KR20080104030A (ko) | 2008-11-28 |
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Legal Events
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FC2A | Withdrawal, rejection or dismissal of laid open patent application |