NO20071128L - Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing - Google Patents
Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsingInfo
- Publication number
- NO20071128L NO20071128L NO20071128A NO20071128A NO20071128L NO 20071128 L NO20071128 L NO 20071128L NO 20071128 A NO20071128 A NO 20071128A NO 20071128 A NO20071128 A NO 20071128A NO 20071128 L NO20071128 L NO 20071128L
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor substrate
- uneven structure
- production
- etching solution
- uniform
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000005530 etching Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 150000001735 carboxylic acids Chemical class 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 230000026683 transduction Effects 0.000 abstract 1
- 238000010361 transduction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004314450 | 2004-10-28 | ||
PCT/JP2005/019688 WO2006046601A1 (fr) | 2004-10-28 | 2005-10-26 | Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d’attaque chimique |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20071128L true NO20071128L (no) | 2007-05-24 |
Family
ID=36227843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20071128A NO20071128L (no) | 2004-10-28 | 2007-02-28 | Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing |
Country Status (11)
Country | Link |
---|---|
US (2) | US20080048279A1 (fr) |
EP (1) | EP1806775A1 (fr) |
JP (1) | JP4394693B2 (fr) |
KR (1) | KR100873432B1 (fr) |
CN (1) | CN101019212B (fr) |
AU (1) | AU2005297901B2 (fr) |
CA (1) | CA2579751C (fr) |
NO (1) | NO20071128L (fr) |
RU (1) | RU2340979C1 (fr) |
TW (1) | TWI390615B (fr) |
WO (1) | WO2006046601A1 (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2015351A1 (fr) | 2006-05-02 | 2009-01-14 | Mimasu Semiconductor Industry Co., Ltd. | Procede de fabrication de substratde semi-conducteur, substrat de semi-conducteur solair et liquide d'attaque chimique |
TW200745313A (en) * | 2006-05-26 | 2007-12-16 | Wako Pure Chem Ind Ltd | Substrate etching liquid |
DE102007026081A1 (de) * | 2007-05-25 | 2008-11-27 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
WO2008147116A2 (fr) * | 2007-05-30 | 2008-12-04 | Jusung Engineering Co., Ltd | Cellule solaire et sa méthode de fabrication |
KR101426941B1 (ko) | 2007-05-30 | 2014-08-06 | 주성엔지니어링(주) | 태양전지 및 그의 제조방법 |
KR100916375B1 (ko) * | 2007-06-27 | 2009-09-07 | 주식회사 에피밸리 | 반도체 발광소자 및 반도체 발광소자를 제조하는 방법 |
WO2009002129A2 (fr) * | 2007-06-27 | 2008-12-31 | Epivalley Co., Ltd. | Dispositif électroluminescent à semi-conducteur et procédé de fabrication de ce dernier |
DE102008014166B3 (de) * | 2008-03-14 | 2009-11-26 | Rena Gmbh | Verfahren zur Herstellung einer Siliziumoberfläche mit pyramidaler Textur |
US8940178B2 (en) * | 2009-03-18 | 2015-01-27 | E I Du Pont De Nemours And Company | Textured silicon substrate and method |
RU2449421C2 (ru) * | 2009-11-06 | 2012-04-27 | Евгений Инвиевич Гиваргизов | Подложка для каскадных солнечных элементов |
CN101844872B (zh) * | 2010-05-07 | 2012-05-02 | 上海长悦涂料有限公司 | 一种植绒液的制备方法 |
JP2011258767A (ja) * | 2010-06-09 | 2011-12-22 | Sharp Corp | 太陽電池 |
MD360Z (ro) * | 2010-09-23 | 2011-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de formare a suprafeţelor microstructurate ale substraturilor de siliciu |
US20120273036A1 (en) * | 2011-04-29 | 2012-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
KR20120136881A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
US9391236B2 (en) * | 2011-08-31 | 2016-07-12 | Asahi Kasei E-Materials Corporation | Substrate for optics having a plurality of dot lines, semiconductor light emitting device. and exposure apparatus |
WO2013058070A1 (fr) * | 2011-10-19 | 2013-04-25 | シャープ株式会社 | Procédé de gravure de substrat semi-conducteur |
WO2013069385A1 (fr) * | 2011-11-08 | 2013-05-16 | シャープ株式会社 | Procédé de gravure de substrat semi-conducteur |
WO2013077075A1 (fr) * | 2011-11-25 | 2013-05-30 | シャープ株式会社 | Procédé de gravure de substrat semi-conducteur et dispositif de gravure |
US8940580B2 (en) * | 2012-06-28 | 2015-01-27 | International Business Machines Corporation | Textured multi-junction solar cell and fabrication method |
CN103560170B (zh) * | 2013-10-29 | 2016-07-06 | 太极能源科技(昆山)有限公司 | Se太阳能电池及其制作方法 |
JP7389571B2 (ja) * | 2019-06-18 | 2023-11-30 | アルバック成膜株式会社 | シリコンエッチング方法及びシリコン基板 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US630640A (en) * | 1899-02-13 | 1899-08-08 | Lorin W Young | Combined hedge and wire fence. |
JPS6442824A (en) * | 1987-08-11 | 1989-02-15 | Kyushu Electron Metal | Wet etching |
JPH06196734A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 半導体太陽電池の製造方法及びその半導体太陽電池 |
JP2955167B2 (ja) * | 1993-11-10 | 1999-10-04 | シャープ株式会社 | 太陽電池の製造方法 |
US6867888B2 (en) * | 1996-07-12 | 2005-03-15 | Science Applications International Corporation | Switchable polymer-dispersed liquid crystal optical elements |
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP3695932B2 (ja) * | 1998-02-12 | 2005-09-14 | 三洋電機株式会社 | 凹凸基板の製造方法 |
JP3948890B2 (ja) * | 2000-08-09 | 2007-07-25 | 三洋電機株式会社 | 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法 |
DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
-
2005
- 2005-10-26 US US11/577,351 patent/US20080048279A1/en not_active Abandoned
- 2005-10-26 CN CN2005800305456A patent/CN101019212B/zh not_active Expired - Fee Related
- 2005-10-26 EP EP05799441A patent/EP1806775A1/fr not_active Withdrawn
- 2005-10-26 CA CA2579751A patent/CA2579751C/fr not_active Expired - Fee Related
- 2005-10-26 WO PCT/JP2005/019688 patent/WO2006046601A1/fr active Application Filing
- 2005-10-26 KR KR1020077005586A patent/KR100873432B1/ko not_active IP Right Cessation
- 2005-10-26 AU AU2005297901A patent/AU2005297901B2/en not_active Ceased
- 2005-10-26 JP JP2006543209A patent/JP4394693B2/ja not_active Expired - Fee Related
- 2005-10-26 RU RU2007116101/28A patent/RU2340979C1/ru not_active IP Right Cessation
- 2005-10-28 TW TW094137909A patent/TWI390615B/zh not_active IP Right Cessation
-
2007
- 2007-02-28 NO NO20071128A patent/NO20071128L/no not_active Application Discontinuation
-
2009
- 2009-02-27 US US12/394,402 patent/US20090166780A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2006046601A1 (fr) | 2006-05-04 |
JPWO2006046601A1 (ja) | 2008-05-22 |
KR100873432B1 (ko) | 2008-12-11 |
JP4394693B2 (ja) | 2010-01-06 |
EP1806775A1 (fr) | 2007-07-11 |
AU2005297901A1 (en) | 2006-05-04 |
KR20070044047A (ko) | 2007-04-26 |
TW200620441A (en) | 2006-06-16 |
RU2340979C1 (ru) | 2008-12-10 |
US20080048279A1 (en) | 2008-02-28 |
CA2579751C (fr) | 2010-12-14 |
CN101019212A (zh) | 2007-08-15 |
US20090166780A1 (en) | 2009-07-02 |
TWI390615B (zh) | 2013-03-21 |
CA2579751A1 (fr) | 2006-05-04 |
AU2005297901B2 (en) | 2008-11-27 |
CN101019212B (zh) | 2010-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |