NL190388C - Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting.

Info

Publication number
NL190388C
NL190388C NLAANVRAGE8700279,A NL8700279A NL190388C NL 190388 C NL190388 C NL 190388C NL 8700279 A NL8700279 A NL 8700279A NL 190388 C NL190388 C NL 190388C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
manufacturing
semiconductor
Prior art date
Application number
NLAANVRAGE8700279,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8700279A (nl
NL190388B (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61024021A external-priority patent/JPS62183508A/ja
Priority claimed from JP7398986A external-priority patent/JPH06101476B2/ja
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8700279A publication Critical patent/NL8700279A/nl
Publication of NL190388B publication Critical patent/NL190388B/xx
Application granted granted Critical
Publication of NL190388C publication Critical patent/NL190388C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NLAANVRAGE8700279,A 1986-02-07 1987-02-06 Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting. NL190388C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61024021A JPS62183508A (ja) 1986-02-07 1986-02-07 半導体基板およびその製造法
JP2402186 1986-02-07
JP7398986 1986-03-31
JP7398986A JPH06101476B2 (ja) 1986-03-31 1986-03-31 電界効果型半導体装置の製造方法

Publications (3)

Publication Number Publication Date
NL8700279A NL8700279A (nl) 1987-09-01
NL190388B NL190388B (nl) 1993-09-01
NL190388C true NL190388C (nl) 1994-02-01

Family

ID=26361478

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8700279,A NL190388C (nl) 1986-02-07 1987-02-06 Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting.

Country Status (3)

Country Link
US (1) US5213991A (xx)
KR (1) KR910001873B1 (xx)
NL (1) NL190388C (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US6064077A (en) 1991-08-30 2000-05-16 Stmicroelectronics, Inc. Integrated circuit transistor
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
KR0129985B1 (ko) * 1993-12-17 1998-04-07 김광호 반도체장치 및 그의 제조방법
US5668025A (en) * 1995-02-28 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of making a FET with dielectrically isolated sources and drains
US5773328A (en) 1995-02-28 1998-06-30 Sgs-Thomson Microelectronics, Inc. Method of making a fully-dielectric-isolated fet
US6420764B1 (en) * 1995-02-28 2002-07-16 Stmicroelectronics, Inc. Field effect transitor having dielectrically isolated sources and drains and methods for making same
US5637518A (en) * 1995-10-16 1997-06-10 Micron Technology, Inc. Method of making a field effect transistor having an elevated source and an elevated drain
JP2751905B2 (ja) * 1995-12-30 1998-05-18 日本電気株式会社 半導体装置およびその製造方法
JPH1174522A (ja) * 1996-12-19 1999-03-16 Texas Instr Inc <Ti> 絶縁体上にソースとドレインと共にプレーナー型ｆｅｔを形成する方法および装置
US5882958A (en) * 1997-09-03 1999-03-16 Wanlass; Frank M. Damascene method for source drain definition of silicon on insulator MOS transistors
US6198114B1 (en) 1997-10-28 2001-03-06 Stmicroelectronics, Inc. Field effect transistor having dielectrically isolated sources and drains and method for making same
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
CN103700698B (zh) * 2013-12-30 2016-06-15 北京京东方光电科技有限公司 一种薄膜晶体管的制备方法、薄膜晶体管及显示面板
CN105609406B (zh) 2014-11-19 2018-09-28 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置、气体供给系统
US20220384659A1 (en) * 2021-05-26 2022-12-01 Globalfoundries U.S. Inc. Field effect transistor
US11764225B2 (en) 2021-06-10 2023-09-19 Globalfoundries U.S. Inc. Field effect transistor with shallow trench isolation features within source/drain regions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
JPS55153368A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Semiconductor memory device
JPS56115557A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56135969A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Manufacture of semiconductor device
JPS5834943A (ja) * 1981-08-26 1983-03-01 Nec Corp 半導体装置の製造方法
EP0077737A3 (en) * 1981-10-19 1984-11-07 FAIRCHILD CAMERA &amp; INSTRUMENT CORPORATION Low capacitance field effect transistor
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
JPS59123224A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造方法
JPS59225516A (ja) * 1983-06-06 1984-12-18 Sony Corp 半導体装置の製法
NL8402859A (nl) * 1984-09-18 1986-04-16 Philips Nv Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen.
JPS6185839A (ja) * 1984-10-04 1986-05-01 Nec Corp 半導体集積回路の製造方法
JPS61220419A (ja) * 1985-03-27 1986-09-30 Fujitsu Ltd 半導体装置の製造方法
KR900007686B1 (ko) * 1986-10-08 1990-10-18 후지쓰 가부시끼가이샤 선택적으로 산화된 실리콘 기판상에 에피택셜 실리콘층과 다결정 실리콘층을 동시에 성장시키는 기상 증착방법

Also Published As

Publication number Publication date
US5213991A (en) 1993-05-25
NL8700279A (nl) 1987-09-01
KR870008394A (ko) 1987-09-26
KR910001873B1 (ko) 1991-03-28
NL190388B (nl) 1993-09-01

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 19980901