DE3884712D1 - Halbleiterspeichervorrichtung und Herstellungsverfahren. - Google Patents

Halbleiterspeichervorrichtung und Herstellungsverfahren.

Info

Publication number
DE3884712D1
DE3884712D1 DE88306931T DE3884712T DE3884712D1 DE 3884712 D1 DE3884712 D1 DE 3884712D1 DE 88306931 T DE88306931 T DE 88306931T DE 3884712 T DE3884712 T DE 3884712T DE 3884712 D1 DE3884712 D1 DE 3884712D1
Authority
DE
Germany
Prior art keywords
manufacturing
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88306931T
Other languages
English (en)
Other versions
DE3884712T2 (de
Inventor
Tsutomu Ashida
Mikiro Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3884712D1 publication Critical patent/DE3884712D1/de
Application granted granted Critical
Publication of DE3884712T2 publication Critical patent/DE3884712T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
DE88306931T 1987-07-27 1988-07-27 Halbleiterspeichervorrichtung und Herstellungsverfahren. Expired - Lifetime DE3884712T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188148A JPH0815186B2 (ja) 1987-07-27 1987-07-27 半導体装置

Publications (2)

Publication Number Publication Date
DE3884712D1 true DE3884712D1 (de) 1993-11-11
DE3884712T2 DE3884712T2 (de) 1994-05-05

Family

ID=16218589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88306931T Expired - Lifetime DE3884712T2 (de) 1987-07-27 1988-07-27 Halbleiterspeichervorrichtung und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US4974042A (de)
EP (1) EP0302659B1 (de)
JP (1) JPH0815186B2 (de)
DE (1) DE3884712T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900019018A (ko) * 1989-05-31 1990-12-22 김광호 이중 다결정실리콘을 갖는 마스크롬장치 및 그 제조방법
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
US5453392A (en) * 1993-12-02 1995-09-26 United Microelectronics Corporation Process for forming flat-cell mask ROMS
US5429967A (en) * 1994-04-08 1995-07-04 United Microelectronics Corporation Process for producing a very high density mask ROM
TW322634B (de) * 1996-03-12 1997-12-11 Sharp Kk
FR2755299B1 (fr) * 1996-10-31 1998-11-20 Sgs Thomson Microelectronics Memoire rom et procede de fabrication correspondant en technologie mos
JP3344563B2 (ja) 1998-10-30 2002-11-11 シャープ株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390971A (en) * 1978-03-20 1983-06-28 Texas Instruments Incorporated Post-metal programmable MOS read only memory
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4342100A (en) * 1979-01-08 1982-07-27 Texas Instruments Incorporated Implant programmable metal gate MOS read only memory
US4328563A (en) * 1979-01-12 1982-05-04 Mostek Corporation High density read only memory
US4364167A (en) * 1979-11-28 1982-12-21 General Motors Corporation Programming an IGFET read-only-memory
JPS56150858A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device and manufacture thereof
US4356042A (en) * 1980-11-07 1982-10-26 Mostek Corporation Method for fabricating a semiconductor read only memory
JPS5944787B2 (ja) * 1982-12-24 1984-11-01 株式会社日立製作所 Ｍｏｓ型ｒｏｍ
US4805143A (en) * 1986-01-16 1989-02-14 Hitachi Ltd. Read-only memory

Also Published As

Publication number Publication date
JPH0815186B2 (ja) 1996-02-14
EP0302659B1 (de) 1993-10-06
EP0302659A1 (de) 1989-02-08
US4974042A (en) 1990-11-27
JPS6431456A (en) 1989-02-01
DE3884712T2 (de) 1994-05-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

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