NL189380C - Halfgeleiderelement en werkwijze voor het vervaardigen ervan. - Google Patents
Halfgeleiderelement en werkwijze voor het vervaardigen ervan.Info
- Publication number
- NL189380C NL189380C NLAANVRAGE8802032,A NL8802032A NL189380C NL 189380 C NL189380 C NL 189380C NL 8802032 A NL8802032 A NL 8802032A NL 189380 C NL189380 C NL 189380C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor element
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206857A JPS6449273A (en) | 1987-08-19 | 1987-08-19 | Semiconductor device and its manufacture |
| JP20685787 | 1987-08-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8802032A NL8802032A (nl) | 1989-03-16 |
| NL189380B NL189380B (nl) | 1992-10-16 |
| NL189380C true NL189380C (nl) | 1993-03-16 |
Family
ID=16530194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE8802032,A NL189380C (nl) | 1987-08-19 | 1988-08-16 | Halfgeleiderelement en werkwijze voor het vervaardigen ervan. |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US5047813A (nl) |
| JP (1) | JPS6449273A (nl) |
| DE (1) | DE3823270C2 (nl) |
| NL (1) | NL189380C (nl) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
| IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
| US5766966A (en) * | 1996-02-09 | 1998-06-16 | International Rectifier Corporation | Power transistor device having ultra deep increased concentration region |
| JP2858404B2 (ja) * | 1990-06-08 | 1999-02-17 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
| JPH05160407A (ja) * | 1991-12-09 | 1993-06-25 | Nippondenso Co Ltd | 縦型絶縁ゲート型半導体装置およびその製造方法 |
| US5321281A (en) * | 1992-03-18 | 1994-06-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of fabricating same |
| DE59208987D1 (de) * | 1992-08-10 | 1997-11-27 | Siemens Ag | Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit |
| US5396087A (en) * | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
| JPH06244430A (ja) * | 1993-02-16 | 1994-09-02 | Fuji Electric Co Ltd | 半導体装置 |
| US5396097A (en) * | 1993-11-22 | 1995-03-07 | Motorola Inc | Transistor with common base region |
| US5723890A (en) * | 1994-01-07 | 1998-03-03 | Fuji Electric Co., Ltd. | MOS type semiconductor device |
| TW280945B (nl) * | 1994-11-21 | 1996-07-11 | Fuji Electric Co Ltd | |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| JPH0955496A (ja) * | 1995-08-17 | 1997-02-25 | Oki Electric Ind Co Ltd | 高耐圧ｍｏｓトランジスタ及びその製造方法 |
| US5789951A (en) * | 1997-01-31 | 1998-08-04 | Motorola, Inc. | Monolithic clamping circuit and method of preventing transistor avalanche breakdown |
| EP1009036B1 (en) * | 1998-12-09 | 2007-09-19 | STMicroelectronics S.r.l. | High-voltage MOS-gated power device, and related manufacturing process |
| DE10009347C2 (de) * | 2000-02-28 | 2003-11-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements |
| US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
| US7157785B2 (en) * | 2003-08-29 | 2007-01-02 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| US8710510B2 (en) | 2006-08-17 | 2014-04-29 | Cree, Inc. | High power insulated gate bipolar transistors |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| US7687825B2 (en) * | 2007-09-18 | 2010-03-30 | Cree, Inc. | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication |
| US20090159927A1 (en) * | 2007-12-21 | 2009-06-25 | Infineon Technologies Austria Ag | Integrated circuit device and method for its production |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US7910983B2 (en) * | 2008-09-30 | 2011-03-22 | Infineon Technologies Austria Ag | MOS transistor having an increased gate-drain capacitance |
| US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| US8674439B2 (en) | 2010-08-02 | 2014-03-18 | Microsemi Corporation | Low loss SiC MOSFET |
| TWI424564B (zh) * | 2011-01-13 | 2014-01-21 | Anpec Electronics Corp | Insulator gate with high operational response speed |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| CN103918079B (zh) | 2011-09-11 | 2017-10-31 | 科锐 | 包括具有改进布局的晶体管的高电流密度功率模块 |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| WO2014204491A1 (en) * | 2013-06-21 | 2014-12-24 | Microsemi Corporation | Low loss sic mosfet |
| JP6621925B2 (ja) * | 2016-07-19 | 2019-12-18 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3955269A (en) * | 1975-06-19 | 1976-05-11 | International Business Machines Corporation | Fabricating high performance integrated bipolar and complementary field effect transistors |
| US4684971A (en) * | 1981-03-13 | 1987-08-04 | American Telephone And Telegraph Company, At&T Bell Laboratories | Ion implanted CMOS devices |
| US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
| US4622573A (en) * | 1983-03-31 | 1986-11-11 | International Business Machines Corporation | CMOS contacting structure having degeneratively doped regions for the prevention of latch-up |
| US4477310A (en) * | 1983-08-12 | 1984-10-16 | Tektronix, Inc. | Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas |
| US4637125A (en) * | 1983-09-22 | 1987-01-20 | Kabushiki Kaisha Toshiba | Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor |
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型ｍｏｓｆｅｔ |
| JPS61150378A (ja) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | 電界効果トランジスタ |
| US4684413A (en) * | 1985-10-07 | 1987-08-04 | Rca Corporation | Method for increasing the switching speed of a semiconductor device by neutron irradiation |
| EP0229362B1 (en) * | 1986-01-10 | 1993-03-17 | General Electric Company | Semiconductor device and method of fabrication |
| JPH0685441B2 (ja) * | 1986-06-18 | 1994-10-26 | 日産自動車株式会社 | 半導体装置 |
| US4821095A (en) * | 1987-03-12 | 1989-04-11 | General Electric Company | Insulated gate semiconductor device with extra short grid and method of fabrication |
-
1987
- 1987-08-19 JP JP62206857A patent/JPS6449273A/ja active Pending
-
1988
- 1988-07-08 DE DE3823270A patent/DE3823270C2/de not_active Expired - Fee Related
- 1988-08-16 NL NLAANVRAGE8802032,A patent/NL189380C/nl not_active IP Right Cessation
-
1989
- 1989-12-28 US US07/455,775 patent/US5047813A/en not_active Expired - Lifetime
-
1991
- 1991-07-22 US US07/733,803 patent/US5468654A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5047813A (en) | 1991-09-10 |
| NL189380B (nl) | 1992-10-16 |
| US5468654A (en) | 1995-11-21 |
| JPS6449273A (en) | 1989-02-23 |
| NL8802032A (nl) | 1989-03-16 |
| DE3823270C2 (de) | 1995-08-10 |
| DE3823270A1 (de) | 1989-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20060301 |