NL189690C - Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting. - Google Patents

Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting.

Info

Publication number
NL189690C
NL189690C NLAANVRAGE8702576,A NL8702576A NL189690C NL 189690 C NL189690 C NL 189690C NL 8702576 A NL8702576 A NL 8702576A NL 189690 C NL189690 C NL 189690C
Authority
NL
Netherlands
Prior art keywords
input protection
protection device
semiconductor chain
semiconductor
chain device
Prior art date
Application number
NLAANVRAGE8702576,A
Other languages
English (en)
Other versions
NL8702576A (nl
NL189690B (nl
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL8702576A publication Critical patent/NL8702576A/nl
Publication of NL189690B publication Critical patent/NL189690B/nl
Application granted granted Critical
Publication of NL189690C publication Critical patent/NL189690C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NLAANVRAGE8702576,A 1987-07-23 1987-10-29 Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting. NL189690C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18432887 1987-07-23
JP62184328A JPH0748652B2 (ja) 1987-07-23 1987-07-23 半導体回路装置の入力保護装置

Publications (3)

Publication Number Publication Date
NL8702576A NL8702576A (nl) 1989-02-16
NL189690B NL189690B (nl) 1993-01-18
NL189690C true NL189690C (nl) 1993-06-16

Family

ID=16151397

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8702576,A NL189690C (nl) 1987-07-23 1987-10-29 Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting.

Country Status (4)

Country Link
US (1) US4858055A (nl)
JP (1) JPH0748652B2 (nl)
DE (1) DE3738333A1 (nl)
NL (1) NL189690C (nl)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1227104B (it) * 1988-09-27 1991-03-15 Sgs Thomson Microelectronics Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione
US4930037A (en) * 1989-02-16 1990-05-29 Advaced Micro Devices, Inc. Input voltage protection system
US4930036A (en) * 1989-07-13 1990-05-29 Northern Telecom Limited Electrostatic discharge protection circuit for an integrated circuit
US5032742A (en) * 1989-07-28 1991-07-16 Dallas Semiconductor Corporation ESD circuit for input which exceeds power supplies in normal operation
JPH0734476B2 (ja) * 1989-10-23 1995-04-12 三菱電機株式会社 半導体集積回路
US5256919A (en) * 1990-06-05 1993-10-26 Heikka Marttila Oy Method for preventing the oscillation of an RF power module
JPH0465878A (ja) * 1990-07-06 1992-03-02 Fuji Electric Co Ltd 半導体装置
JPH04370629A (ja) * 1991-06-19 1992-12-24 Toshiba Corp 偏向ヨーク装置
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
JP3318774B2 (ja) * 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
KR0111811Y1 (ko) * 1994-12-30 1998-10-01 이형도 전압 클립퍼 회로
JP2874583B2 (ja) * 1995-02-10 1999-03-24 日本電気株式会社 半導体装置の入力保護回路
US5864254A (en) * 1995-04-11 1999-01-26 Rohm Co., Ltd. Differential amplifier circuit with enlarged range for source voltage and semiconductor device using same
JP3351171B2 (ja) * 1995-04-13 2002-11-25 トヨタ自動車株式会社 コンデンサ容量診断回路
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5903184A (en) * 1995-12-19 1999-05-11 Rohm Co., Ltd. Semiconductor device having protection circuit
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US6064093A (en) * 1996-03-29 2000-05-16 Citizen Watch Co., Ltd. Protection circuit with clamping feature for semiconductor device
US5739998A (en) * 1996-07-12 1998-04-14 Kabushiki Kaisha Toshiba Protective circuit and semiconductor integrated circuit incorporating protective circuit
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
US5966038A (en) * 1997-12-15 1999-10-12 Motorola, Inc. Circuit with overvoltage protection
FR2782581B1 (fr) * 1998-08-18 2000-09-22 St Microelectronics Sa Dispositif de protection contre les decharges electrostatiques
US6288590B1 (en) * 1999-05-21 2001-09-11 Intel Corporation High voltage protection input buffer
WO2001031707A1 (en) * 1999-10-26 2001-05-03 Koninklijke Philips Electronics N.V. Semiconductor device including an integrated esd protection field effect device
JP2002023902A (ja) * 2000-07-11 2002-01-25 Mitsubishi Electric Corp 半導体装置
US6348820B1 (en) * 2000-07-17 2002-02-19 Motorola, Inc. High-side, low-side configurable driver
FR2813439B1 (fr) 2000-08-30 2003-01-31 St Microelectronics Sa Circuit integre muni d'une protection contre les decharges electrostatiques
EP1474870B1 (en) * 2002-02-06 2008-05-21 Nxp B.V. Input stage resistant against high voltage swings
US7057450B2 (en) * 2003-07-30 2006-06-06 Winbond Electronics Corp. Noise filter for an integrated circuit
TWI257165B (en) * 2003-10-28 2006-06-21 Sunplus Technology Co Ltd Electrostatic discharge protection device
US7151400B2 (en) * 2004-07-13 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Boost-biased level shifter
CN100412754C (zh) * 2004-12-17 2008-08-20 鸿富锦精密工业(深圳)有限公司 电源电压产生电路
CN100389373C (zh) * 2004-12-25 2008-05-21 鸿富锦精密工业(深圳)有限公司 电源电压产生电路
CN100438250C (zh) * 2005-03-05 2008-11-26 鸿富锦精密工业(深圳)有限公司 电子元件断电保护电路
JP4506624B2 (ja) * 2005-09-07 2010-07-21 株式会社村田製作所 被測定デバイスの測定装置及び測定方法
JP5041760B2 (ja) * 2006-08-08 2012-10-03 ルネサスエレクトロニクス株式会社 半導体集積回路装置
EP2023392A1 (en) * 2007-08-08 2009-02-11 STMicroelectronics S.r.l. Integrated circuit with device for protecting against electrostatic discharges
JP2018032981A (ja) * 2016-08-24 2018-03-01 株式会社東芝 半導体集積回路
JP2020150575A (ja) * 2019-03-11 2020-09-17 セイコーエプソン株式会社 駆動制御装置、駆動回路および移動体
FR3095560B1 (fr) * 2019-04-26 2021-12-03 St Microelectronics Rousset Association de transistors en série

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors
US4131928A (en) * 1977-06-24 1978-12-26 Motorola, Inc. Voltage clamp device for monolithic circuits
US4220876A (en) * 1978-08-17 1980-09-02 Motorola, Inc. Bus terminating and decoupling circuit
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JPS61156854A (ja) * 1984-12-28 1986-07-16 Mitsubishi Electric Corp 相補型mos半導体装置の入力保護回路
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPS61230352A (ja) * 1985-04-05 1986-10-14 Hitachi Ltd 半導体集積回路
JPS61245562A (ja) * 1985-04-24 1986-10-31 Hitachi Ltd 静電波壊防止回路
IT1214606B (it) * 1985-05-13 1990-01-18 Ates Componenti Elettron Dispositivo integrato di protezione dinamica, in particolare per circuiti integrati con ingresso in tecnologia mos.
US4728826A (en) * 1986-03-19 1988-03-01 Siemens Aktiengesellschaft MOSFET switch with inductive load
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture

Also Published As

Publication number Publication date
JPS6429018A (en) 1989-01-31
JPH0748652B2 (ja) 1995-05-24
DE3738333C2 (nl) 1992-02-13
US4858055A (en) 1989-08-15
NL8702576A (nl) 1989-02-16
NL189690B (nl) 1993-01-18
DE3738333A1 (de) 1989-02-02

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Legal Events

Date Code Title Description
A1C A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20000501