NL1010935C2 - Halfgeleiderinrichting gebruikmakend van een polymeerbevattend fotomasker, en wijze voor de bereiding ervan. - Google Patents

Halfgeleiderinrichting gebruikmakend van een polymeerbevattend fotomasker, en wijze voor de bereiding ervan. Download PDF

Info

Publication number
NL1010935C2
NL1010935C2 NL1010935A NL1010935A NL1010935C2 NL 1010935 C2 NL1010935 C2 NL 1010935C2 NL 1010935 A NL1010935 A NL 1010935A NL 1010935 A NL1010935 A NL 1010935A NL 1010935 C2 NL1010935 C2 NL 1010935C2
Authority
NL
Netherlands
Prior art keywords
norbornene
carboxylate
formula
polymer
butyl
Prior art date
Application number
NL1010935A
Other languages
English (en)
Dutch (nl)
Other versions
NL1010935A1 (nl
Inventor
Jae Chang Jung
Cheol Kyu Bok
Min Ho Jung
Ki Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1010935A1 publication Critical patent/NL1010935A1/xx
Application granted granted Critical
Publication of NL1010935C2 publication Critical patent/NL1010935C2/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/30—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group
    • C07C67/333—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton
    • C07C67/343—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms
    • C07C67/347—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms by addition to unsaturated carbon-to-carbon bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/04—Anhydrides, e.g. cyclic anhydrides
    • C08F222/06—Maleic anhydride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
NL1010935A 1997-12-31 1998-12-31 Halfgeleiderinrichting gebruikmakend van een polymeerbevattend fotomasker, en wijze voor de bereiding ervan. NL1010935C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970081403A KR100520148B1 (ko) 1997-12-31 1997-12-31 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR19970081403 1997-12-31

Publications (2)

Publication Number Publication Date
NL1010935A1 NL1010935A1 (nl) 1999-07-01
NL1010935C2 true NL1010935C2 (nl) 1999-10-28

Family

ID=19530560

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1010935A NL1010935C2 (nl) 1997-12-31 1998-12-31 Halfgeleiderinrichting gebruikmakend van een polymeerbevattend fotomasker, en wijze voor de bereiding ervan.

Country Status (10)

Country Link
US (2) US6312865B1 (fr)
JP (1) JP4183815B2 (fr)
KR (1) KR100520148B1 (fr)
CN (1) CN1129166C (fr)
DE (1) DE19860767A1 (fr)
FR (1) FR2773152B1 (fr)
GB (1) GB2332902B (fr)
IT (1) IT1305110B1 (fr)
NL (1) NL1010935C2 (fr)
TW (1) TW432255B (fr)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100520148B1 (ko) * 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100634973B1 (ko) 1999-04-09 2006-10-16 센쥬긴소쿠고교가부시키가이샤 솔더볼 및 솔더볼의 피복방법
KR100647379B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
KR100647380B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100520180B1 (ko) * 1999-08-31 2005-10-10 주식회사 하이닉스반도체 포토레지스트의 노광후 지연 안정성을 확보하기 위한 첨가제
KR100546105B1 (ko) * 1999-11-03 2006-01-24 주식회사 하이닉스반도체 신규의 포토레지스트용 중합체 및 이를 함유하는포토레지스트 조성물
EP1127870B1 (fr) 2000-02-26 2003-11-05 Shipley Company LLC Monomères,polymères,leurs méthodes de synthèse et compositions de photoréserves
US6277683B1 (en) * 2000-02-28 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer
EP1307493A2 (fr) 2000-07-28 2003-05-07 Goodrich Corporation Compositions polymeriques utiles pour former des guides d'ondes optiques et guides d'ondes optiques formes a partir de ces compositions et procedes de fabrication des memes
JP4469080B2 (ja) * 2000-12-13 2010-05-26 信越化学工業株式会社 脂環構造を有する新規第三級アルコール化合物
KR20030057948A (ko) * 2001-12-29 2003-07-07 삼성전자주식회사 히드록시 그룹을 구비하는 불소치환 알킬 노르보넨카르복실산 에스테르 모노머를 포함하는 감광성 폴리머 및이를 포함하는 레지스트 조성물
US6803434B2 (en) * 2002-03-19 2004-10-12 Arch Specialty Chemicals, Inc. Process for producing anhydride-containing polymers for radiation sensitive compositions
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
KR100947702B1 (ko) * 2003-02-26 2010-03-16 삼성전자주식회사 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7294580B2 (en) * 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US7575789B2 (en) * 2003-12-17 2009-08-18 E.I. Du Pont De Nemours And Company Coated pipes for conveying oil
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US6969570B1 (en) 2004-10-26 2005-11-29 Kodak Polychrome Graphics, Llc Solvent resistant imageable element
US7588058B2 (en) * 2004-11-24 2009-09-15 E. I. Du Pont De Nemours And Company Coated pipes for harsh environments
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7241683B2 (en) * 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
KR20060107250A (ko) * 2005-04-08 2006-10-13 주식회사 코오롱 감광성 수지조성물 및 이로부터 얻어진 드라이필름포토레지스트
KR100732301B1 (ko) * 2005-06-02 2007-06-25 주식회사 하이닉스반도체 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7716813B2 (en) * 2006-12-05 2010-05-18 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating magnetic write pole for a magnetic head using an E-beam resist mask
JP5070109B2 (ja) * 2007-04-27 2012-11-07 富士フイルム株式会社 環状オレフィン系重合体、それを用いた光学材料、偏光板および液晶表示装置
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US9550846B2 (en) * 2013-03-13 2017-01-24 The Curators Of The University Of Missouri Flexible to rigid nanoporous polyurethane-acrylate (PUAC) type materials for structural and thermal insulation applications
CN110007558A (zh) 2017-12-29 2019-07-12 财团法人工业技术研究院 组合物、包含其的绝缘材料及其制法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715330A (en) * 1970-05-20 1973-02-06 Asahi Chemical Ind Self-thermoset unsaturated polyesters and method for preparation thereof
JPS5628257B2 (fr) 1973-09-27 1981-06-30
US4106943A (en) 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4202955A (en) 1975-12-16 1980-05-13 Borg-Warner Corporation Copolymers of cyclic conjugated dienes and maleic anhydride
US4440850A (en) * 1981-07-23 1984-04-03 Ciba-Geigy Corporation Photopolymerisation process with two exposures of a single layer
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US4948856A (en) 1987-05-22 1990-08-14 B. F. Goodrich Company Homogeneous addition copolymers of ethylene and cycloolefin monomers and method for producing same
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
US5212043A (en) 1988-02-17 1993-05-18 Tosho Corporation Photoresist composition comprising a non-aromatic resin having no aromatic structures derived from units of an aliphatic cyclic hydrocarbon and units of maleic anhydride and/or maleimide and a photosensitive agent
US5252427A (en) 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JP3208602B2 (ja) * 1992-06-30 2001-09-17 富士通株式会社 α，β−不飽和ニトリルを有する脂環式多環族とメタクリレート誘導体との共重合体
US5849808A (en) 1995-04-21 1998-12-15 Olin Microelectronic Chemicals, Inc. Organic solvent soluble photoresists which are developable in aqueous alkaline solutions
US5705503A (en) 1995-05-25 1998-01-06 Goodall; Brian Leslie Addition polymers of polycycloolefins containing functional substituents
ATE297562T1 (de) 1996-03-07 2005-06-15 Sumitomo Bakelite Co Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100261022B1 (ko) 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물
KR100245410B1 (ko) * 1997-12-02 2000-03-02 윤종용 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물
KR19980037970A (ko) * 1996-11-22 1998-08-05 김광호 ArF 엑시머 레이저용 베이스 레진 및 레지스트 조성물
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) * 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
KR100195583B1 (ko) * 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
KR100252217B1 (ko) * 1997-05-03 2000-06-01 윤종용 반도체장치의 제조를 위한 원자외선 노광용 포토레지스트 조성용 구조제 수지와 그 제조방법 및 그 구조제 수지를 포함하는 원자외선 노광용 포토레지스트 조성물
KR100240024B1 (ko) * 1997-05-08 2000-01-15 윤종용 반도체장치의 제조를 위한 원자외선 노광용 포토레지스트 조성용 구조제 수지와 그 제조방법 및 그 구조제 수지를 포함하는 원자외선 노광용 포토레지스트 조성물
KR100252546B1 (ko) * 1997-11-01 2000-04-15 김영환 공중합체 수지와 포토레지스트 및 그 제조방법
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) * 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR100301053B1 (ko) * 1998-09-21 2001-09-22 윤종용 화학증폭형 포토레지스트용 감광성 중합체 및 이를 포함하는 화학 증폭형 포토레지스트 조성물
US6048664A (en) * 1999-03-12 2000-04-11 Lucent Technologies, Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material

Also Published As

Publication number Publication date
US6312865B1 (en) 2001-11-06
CN1221969A (zh) 1999-07-07
US6632903B2 (en) 2003-10-14
JPH11286469A (ja) 1999-10-19
IT1305110B1 (it) 2001-04-10
TW432255B (en) 2001-05-01
KR19990061148A (ko) 1999-07-26
DE19860767A1 (de) 1999-07-15
KR100520148B1 (ko) 2006-05-12
ITTO981115A1 (it) 2000-06-30
GB9828031D0 (en) 1999-02-10
CN1129166C (zh) 2003-11-26
NL1010935A1 (nl) 1999-07-01
ITTO981115A0 (it) 1998-12-30
GB2332902A (en) 1999-07-07
FR2773152A1 (fr) 1999-07-02
JP4183815B2 (ja) 2008-11-19
GB2332902B (en) 2003-03-26
FR2773152B1 (fr) 2004-09-10
US20010053834A1 (en) 2001-12-20

Similar Documents

Publication Publication Date Title
NL1010935C2 (nl) Halfgeleiderinrichting gebruikmakend van een polymeerbevattend fotomasker, en wijze voor de bereiding ervan.
US6808859B1 (en) ArF photoresist copolymers
NL1007939C2 (nl) Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt.
NL1010914C2 (nl) Copolymere hars, bereiding daarvan en fotolak die daar gebruik van maakt.
KR101296989B1 (ko) 산 발생제로서 적합한 수지 및 그를 함유하는 화학 증폭 포지티브형 레지스트 조성물
KR101382727B1 (ko) 화학 증폭 포지티브형 레지스트 조성물
KR101416035B1 (ko) 산 발생제용으로 적합한 염 및 이를 함유하는 화학 증폭형포지티브 내식막 조성물
TWI439804B (zh) 化學增幅型阻劑組成物
KR101244093B1 (ko) 화학 증폭 포지티브 레지스트 조성물, (메트)아크릴레이트유도체 및 그의 제조 방법
TWI437364B (zh) 化學放大型阻劑組成物
KR101547568B1 (ko) 산 발생제에 적합한 염 및 이를 함유한 화학 증폭형포지티브 레지스트 조성물
JP5478115B2 (ja) フォトレジスト用重合体及びその組成物
KR101101664B1 (ko) 화학 증폭형 포지티브 레지스트 조성물 및 이의 수지
US6235447B1 (en) Photoresist monomers, polymers thereof, and photoresist compositions containing the same
US8062829B2 (en) Chemically amplified resist composition and chemically amplified resist composition for immersion lithography
US6586619B2 (en) Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same
JP5478106B2 (ja) フォトレジスト用重合体及びその組成物
US6165672A (en) Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin
KR100354871B1 (ko) 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR101455619B1 (ko) 화학 증폭형 포지티브 레지스트 조성물
TWI507815B (zh) 化學放大正型光阻組成物
KR100504290B1 (ko) 포토레지스트용 옥소옥사알카노노르보넨 함유 공중합체 및그를 포함하는 포토레지스트 조성물

Legal Events

Date Code Title Description
AD1B A search report has been drawn up
PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20160101