GB2332902B - Semiconductor device using polymer-containing photoresist and process for manufacturing the same - Google Patents

Semiconductor device using polymer-containing photoresist and process for manufacturing the same

Info

Publication number
GB2332902B
GB2332902B GB9828031A GB9828031A GB2332902B GB 2332902 B GB2332902 B GB 2332902B GB 9828031 A GB9828031 A GB 9828031A GB 9828031 A GB9828031 A GB 9828031A GB 2332902 B GB2332902 B GB 2332902B
Authority
GB
United Kingdom
Prior art keywords
polymer
manufacturing
semiconductor device
same
containing photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9828031A
Other languages
English (en)
Other versions
GB9828031D0 (en
GB2332902A (en
Inventor
Min Ho Jung
Jae-Chang Jung
Cheol Kyu Bok
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9828031D0 publication Critical patent/GB9828031D0/en
Publication of GB2332902A publication Critical patent/GB2332902A/en
Application granted granted Critical
Publication of GB2332902B publication Critical patent/GB2332902B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/30—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group
    • C07C67/333—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton
    • C07C67/343—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms
    • C07C67/347—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms by addition to unsaturated carbon-to-carbon bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/04—Anhydrides, e.g. cyclic anhydrides
    • C08F222/06—Maleic anhydride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
GB9828031A 1997-12-31 1998-12-18 Semiconductor device using polymer-containing photoresist and process for manufacturing the same Expired - Fee Related GB2332902B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970081403A KR100520148B1 (ko) 1997-12-31 1997-12-31 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물

Publications (3)

Publication Number Publication Date
GB9828031D0 GB9828031D0 (en) 1999-02-10
GB2332902A GB2332902A (en) 1999-07-07
GB2332902B true GB2332902B (en) 2003-03-26

Family

ID=19530560

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9828031A Expired - Fee Related GB2332902B (en) 1997-12-31 1998-12-18 Semiconductor device using polymer-containing photoresist and process for manufacturing the same

Country Status (10)

Country Link
US (2) US6312865B1 (fr)
JP (1) JP4183815B2 (fr)
KR (1) KR100520148B1 (fr)
CN (1) CN1129166C (fr)
DE (1) DE19860767A1 (fr)
FR (1) FR2773152B1 (fr)
GB (1) GB2332902B (fr)
IT (1) IT1305110B1 (fr)
NL (1) NL1010935C2 (fr)
TW (1) TW432255B (fr)

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US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100520148B1 (ko) * 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100634973B1 (ko) 1999-04-09 2006-10-16 센쥬긴소쿠고교가부시키가이샤 솔더볼 및 솔더볼의 피복방법
KR100647379B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
KR100647380B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100520180B1 (ko) * 1999-08-31 2005-10-10 주식회사 하이닉스반도체 포토레지스트의 노광후 지연 안정성을 확보하기 위한 첨가제
KR100546105B1 (ko) * 1999-11-03 2006-01-24 주식회사 하이닉스반도체 신규의 포토레지스트용 중합체 및 이를 함유하는포토레지스트 조성물
EP1127870B1 (fr) 2000-02-26 2003-11-05 Shipley Company LLC Monomères,polymères,leurs méthodes de synthèse et compositions de photoréserves
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KR20030057948A (ko) * 2001-12-29 2003-07-07 삼성전자주식회사 히드록시 그룹을 구비하는 불소치환 알킬 노르보넨카르복실산 에스테르 모노머를 포함하는 감광성 폴리머 및이를 포함하는 레지스트 조성물
US6803434B2 (en) * 2002-03-19 2004-10-12 Arch Specialty Chemicals, Inc. Process for producing anhydride-containing polymers for radiation sensitive compositions
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
KR100947702B1 (ko) * 2003-02-26 2010-03-16 삼성전자주식회사 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7294580B2 (en) * 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US7575789B2 (en) * 2003-12-17 2009-08-18 E.I. Du Pont De Nemours And Company Coated pipes for conveying oil
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US6969570B1 (en) 2004-10-26 2005-11-29 Kodak Polychrome Graphics, Llc Solvent resistant imageable element
US7588058B2 (en) * 2004-11-24 2009-09-15 E. I. Du Pont De Nemours And Company Coated pipes for harsh environments
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7241683B2 (en) * 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
KR20060107250A (ko) * 2005-04-08 2006-10-13 주식회사 코오롱 감광성 수지조성물 및 이로부터 얻어진 드라이필름포토레지스트
KR100732301B1 (ko) * 2005-06-02 2007-06-25 주식회사 하이닉스반도체 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7716813B2 (en) * 2006-12-05 2010-05-18 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating magnetic write pole for a magnetic head using an E-beam resist mask
JP5070109B2 (ja) * 2007-04-27 2012-11-07 富士フイルム株式会社 環状オレフィン系重合体、それを用いた光学材料、偏光板および液晶表示装置
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US9550846B2 (en) * 2013-03-13 2017-01-24 The Curators Of The University Of Missouri Flexible to rigid nanoporous polyurethane-acrylate (PUAC) type materials for structural and thermal insulation applications
CN110007558A (zh) 2017-12-29 2019-07-12 财团法人工业技术研究院 组合物、包含其的绝缘材料及其制法

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GB2321060A (en) * 1997-01-10 1998-07-15 Hyundai Electronics Ind Amine-containing alicyclic photoresist copolymer
GB2332679A (en) * 1997-12-29 1999-06-30 Hyundai Electronics Ind Copolymers of substituted norbornenes for photo resists

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GB1342112A (en) * 1970-05-20 1973-12-25 Asahi Chemical Ind Self-thermosetting unsaturated polyesters and method for preparation thereof
EP0071571A1 (fr) * 1981-07-23 1983-02-09 Ciba-Geigy Ag Procédé de photopolymérisation
GB2320717A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Ind Copolymer for photoresist
GB2320718A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Industries Co Ltd Bicycloalkene photoresist copolymers
GB2321060A (en) * 1997-01-10 1998-07-15 Hyundai Electronics Ind Amine-containing alicyclic photoresist copolymer
GB2332679A (en) * 1997-12-29 1999-06-30 Hyundai Electronics Ind Copolymers of substituted norbornenes for photo resists

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Also Published As

Publication number Publication date
US6312865B1 (en) 2001-11-06
CN1221969A (zh) 1999-07-07
NL1010935C2 (nl) 1999-10-28
US6632903B2 (en) 2003-10-14
JPH11286469A (ja) 1999-10-19
IT1305110B1 (it) 2001-04-10
TW432255B (en) 2001-05-01
KR19990061148A (ko) 1999-07-26
DE19860767A1 (de) 1999-07-15
KR100520148B1 (ko) 2006-05-12
ITTO981115A1 (it) 2000-06-30
GB9828031D0 (en) 1999-02-10
CN1129166C (zh) 2003-11-26
NL1010935A1 (nl) 1999-07-01
ITTO981115A0 (it) 1998-12-30
GB2332902A (en) 1999-07-07
FR2773152A1 (fr) 1999-07-02
JP4183815B2 (ja) 2008-11-19
FR2773152B1 (fr) 2004-09-10
US20010053834A1 (en) 2001-12-20

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20151218