NL1008001C2 - Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. - Google Patents

Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. Download PDF

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Publication number
NL1008001C2
NL1008001C2 NL1008001A NL1008001A NL1008001C2 NL 1008001 C2 NL1008001 C2 NL 1008001C2 NL 1008001 A NL1008001 A NL 1008001A NL 1008001 A NL1008001 A NL 1008001A NL 1008001 C2 NL1008001 C2 NL 1008001C2
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NL
Netherlands
Prior art keywords
carboxylate
norbornene
cyclopentene
oct
bicyclo
Prior art date
Application number
NL1008001A
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English (en)
Dutch (nl)
Other versions
NL1008001A1 (nl
Inventor
Jae Chang Jung
Chi Hyeong Roh
Joo On Park
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1008001A1 publication Critical patent/NL1008001A1/xx
Application granted granted Critical
Publication of NL1008001C2 publication Critical patent/NL1008001C2/nl

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
NL1008001A 1997-01-10 1998-01-09 Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. NL1008001C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970000472A KR100225956B1 (ko) 1997-01-10 1997-01-10 아민을 도입한 에이알에프 감광막 수지
KR19970000472 1997-01-10

Publications (2)

Publication Number Publication Date
NL1008001A1 NL1008001A1 (nl) 1998-07-13
NL1008001C2 true NL1008001C2 (nl) 1998-11-17

Family

ID=19494392

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1008001A NL1008001C2 (nl) 1997-01-10 1998-01-09 Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt.

Country Status (9)

Country Link
US (1) US6045967A (zh)
JP (1) JP3506594B2 (zh)
KR (1) KR100225956B1 (zh)
CN (1) CN1112603C (zh)
DE (1) DE19800633B4 (zh)
FR (1) FR2758333B1 (zh)
GB (1) GB2321060B (zh)
NL (1) NL1008001C2 (zh)
TW (1) TW476868B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR100334387B1 (ko) * 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
TW444027B (en) * 1998-06-30 2001-07-01 Ind Tech Res Inst Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
KR100448860B1 (ko) * 1998-08-26 2005-02-23 주식회사 하이닉스반도체 포토레지스트단량체,그의공중합체및이를포함하는포토레지스트조성물
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100400293B1 (ko) * 1998-11-27 2004-03-22 주식회사 하이닉스반도체 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
US6475904B2 (en) * 1998-12-03 2002-11-05 Advanced Micro Devices, Inc. Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
KR100301062B1 (ko) * 1999-07-29 2001-09-22 윤종용 백본이 환상구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100647380B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016970A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100425442B1 (ko) * 1999-08-24 2004-03-30 삼성전자주식회사 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물
US6265131B1 (en) * 2000-04-03 2001-07-24 Everlight Usa. Inc. Alicyclic dissolution inhibitors and positive potoresist composition containing the same
US6294309B1 (en) * 2000-06-30 2001-09-25 Everlight Usa, Inc. Positive photoresist composition containing alicyclic dissolution inhibitors
WO2002069038A2 (en) * 2001-02-25 2002-09-06 Shipley Company, L.L.C. Novel polymers and photoresist compositions comprising same
KR100557556B1 (ko) 2001-10-25 2006-03-03 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 첨가제 및 이를 함유하는포토레지스트 조성물
JP4502115B2 (ja) * 2004-04-23 2010-07-14 信越化学工業株式会社 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法
JP4525440B2 (ja) * 2005-04-20 2010-08-18 Ｊｓｒ株式会社 感放射線性樹脂組成物
US8092628B2 (en) 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
US8771927B2 (en) * 2009-04-15 2014-07-08 Brewer Science Inc. Acid-etch resistant, protective coatings

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL128164C (zh) *
US3370047A (en) * 1964-09-03 1968-02-20 Union Carbide Corp Pour point depressants and lubricating compositions thereof
NL6914466A (zh) * 1969-09-24 1971-03-26
GB1335095A (en) * 1971-01-14 1973-10-24 Kodak Ltd Polycondensation copolymers
JPS5818369B2 (ja) * 1973-09-05 1983-04-12 ジェイエスアール株式会社 ノルボルネンカルボンサンアミドオヨビ ／ マタハイミドルイノ （ キヨウ ） ジユウゴウタイノセイゾウホウホウ
US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
EP0380676B1 (en) * 1988-02-17 1994-05-04 Tosoh Corporation Photoresist composition
JPH0251511A (ja) * 1988-08-15 1990-02-21 Mitsui Petrochem Ind Ltd 極性基含有環状オレフイン系共重合体およびその製法
DE3922546A1 (de) * 1989-07-08 1991-01-17 Hoechst Ag Verfahren zur herstellung von cycloolefinpolymeren
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
CA2064750C (en) * 1990-06-06 2002-03-19 Satoru Moriya Polyolefin resin composition
JPH0499967A (ja) * 1990-08-20 1992-03-31 Yokogawa Electric Corp 実効値直流変換装置
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH05297591A (ja) * 1992-04-20 1993-11-12 Fujitsu Ltd ポジ型放射線レジストとレジストパターンの形成方法
US5705503A (en) * 1995-05-25 1998-01-06 Goodall; Brian Leslie Addition polymers of polycycloolefins containing functional substituents
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
KR100536824B1 (ko) * 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5763556A (en) * 1996-05-21 1998-06-09 Exxon Chemical Patents Inc. Copolymers of ethylene and geminally disubstituted olefins
KR100261022B1 (ko) * 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물
KR100211548B1 (ko) * 1996-12-20 1999-08-02 김영환 원자외선용 감광막 공중합체 및 그 제조방법
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) * 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지

Also Published As

Publication number Publication date
GB2321060B (en) 2001-04-18
CN1112603C (zh) 2003-06-25
GB2321060A (en) 1998-07-15
US6045967A (en) 2000-04-04
TW476868B (en) 2002-02-21
GB9800194D0 (en) 1998-03-04
JP3506594B2 (ja) 2004-03-15
CN1191333A (zh) 1998-08-26
JPH10207058A (ja) 1998-08-07
NL1008001A1 (nl) 1998-07-13
KR100225956B1 (ko) 1999-10-15
FR2758333A1 (fr) 1998-07-17
FR2758333B1 (fr) 2003-05-02
DE19800633A1 (de) 1998-07-16
DE19800633B4 (de) 2007-03-08
KR19980065458A (ko) 1998-10-15

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