NL1008001C2 - Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. - Google Patents
Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. Download PDFInfo
- Publication number
- NL1008001C2 NL1008001C2 NL1008001A NL1008001A NL1008001C2 NL 1008001 C2 NL1008001 C2 NL 1008001C2 NL 1008001 A NL1008001 A NL 1008001A NL 1008001 A NL1008001 A NL 1008001A NL 1008001 C2 NL1008001 C2 NL 1008001C2
- Authority
- NL
- Netherlands
- Prior art keywords
- carboxylate
- norbornene
- cyclopentene
- oct
- bicyclo
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970000472A KR100225956B1 (ko) | 1997-01-10 | 1997-01-10 | 아민을 도입한 에이알에프 감광막 수지 |
KR19970000472 | 1997-01-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1008001A1 NL1008001A1 (nl) | 1998-07-13 |
NL1008001C2 true NL1008001C2 (nl) | 1998-11-17 |
Family
ID=19494392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1008001A NL1008001C2 (nl) | 1997-01-10 | 1998-01-09 | Werkwijze en inrichting waarin ArF fotoresist wordt gebruikt. |
Country Status (9)
Country | Link |
---|---|
US (1) | US6045967A (zh) |
JP (1) | JP3506594B2 (zh) |
KR (1) | KR100225956B1 (zh) |
CN (1) | CN1112603C (zh) |
DE (1) | DE19800633B4 (zh) |
FR (1) | FR2758333B1 (zh) |
GB (1) | GB2321060B (zh) |
NL (1) | NL1008001C2 (zh) |
TW (1) | TW476868B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
US6808859B1 (en) * | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
KR100321080B1 (ko) | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
KR100520148B1 (ko) | 1997-12-31 | 2006-05-12 | 주식회사 하이닉스반도체 | 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물 |
KR100334387B1 (ko) * | 1997-12-31 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와그제조방법및이수지를이용한포토레지스트 |
KR100376983B1 (ko) | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR19990081722A (ko) | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
TW444027B (en) * | 1998-06-30 | 2001-07-01 | Ind Tech Res Inst | Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer |
KR100403325B1 (ko) | 1998-07-27 | 2004-03-24 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한포토레지스트조성물 |
KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
JP3587743B2 (ja) | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
KR100448860B1 (ko) * | 1998-08-26 | 2005-02-23 | 주식회사 하이닉스반도체 | 포토레지스트단량체,그의공중합체및이를포함하는포토레지스트조성물 |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
KR100400293B1 (ko) * | 1998-11-27 | 2004-03-22 | 주식회사 하이닉스반도체 | 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물 |
US6475904B2 (en) * | 1998-12-03 | 2002-11-05 | Advanced Micro Devices, Inc. | Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques |
KR100301062B1 (ko) * | 1999-07-29 | 2001-09-22 | 윤종용 | 백본이 환상구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물 |
KR100647380B1 (ko) * | 1999-07-30 | 2006-11-17 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
KR20010016970A (ko) * | 1999-08-06 | 2001-03-05 | 박종섭 | 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
KR100425442B1 (ko) * | 1999-08-24 | 2004-03-30 | 삼성전자주식회사 | 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물 |
US6265131B1 (en) * | 2000-04-03 | 2001-07-24 | Everlight Usa. Inc. | Alicyclic dissolution inhibitors and positive potoresist composition containing the same |
US6294309B1 (en) * | 2000-06-30 | 2001-09-25 | Everlight Usa, Inc. | Positive photoresist composition containing alicyclic dissolution inhibitors |
WO2002069038A2 (en) * | 2001-02-25 | 2002-09-06 | Shipley Company, L.L.C. | Novel polymers and photoresist compositions comprising same |
KR100557556B1 (ko) | 2001-10-25 | 2006-03-03 | 주식회사 하이닉스반도체 | 산 확산 방지용 포토레지스트 첨가제 및 이를 함유하는포토레지스트 조성물 |
JP4502115B2 (ja) * | 2004-04-23 | 2010-07-14 | 信越化学工業株式会社 | 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法 |
JP4525440B2 (ja) * | 2005-04-20 | 2010-08-18 | Jsr株式会社 | 感放射線性樹脂組成物 |
US8092628B2 (en) | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
US8771927B2 (en) * | 2009-04-15 | 2014-07-08 | Brewer Science Inc. | Acid-etch resistant, protective coatings |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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NL128164C (zh) * | ||||
US3370047A (en) * | 1964-09-03 | 1968-02-20 | Union Carbide Corp | Pour point depressants and lubricating compositions thereof |
NL6914466A (zh) * | 1969-09-24 | 1971-03-26 | ||
GB1335095A (en) * | 1971-01-14 | 1973-10-24 | Kodak Ltd | Polycondensation copolymers |
JPS5818369B2 (ja) * | 1973-09-05 | 1983-04-12 | ジェイエスアール株式会社 | ノルボルネンカルボンサンアミドオヨビ / マタハイミドルイノ ( キヨウ ) ジユウゴウタイノセイゾウホウホウ |
US4106943A (en) * | 1973-09-27 | 1978-08-15 | Japan Synthetic Rubber Co., Ltd. | Photosensitive cross-linkable azide containing polymeric composition |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3721741A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
EP0380676B1 (en) * | 1988-02-17 | 1994-05-04 | Tosoh Corporation | Photoresist composition |
JPH0251511A (ja) * | 1988-08-15 | 1990-02-21 | Mitsui Petrochem Ind Ltd | 極性基含有環状オレフイン系共重合体およびその製法 |
DE3922546A1 (de) * | 1989-07-08 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von cycloolefinpolymeren |
US5252427A (en) * | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
CA2064750C (en) * | 1990-06-06 | 2002-03-19 | Satoru Moriya | Polyolefin resin composition |
JPH0499967A (ja) * | 1990-08-20 | 1992-03-31 | Yokogawa Electric Corp | 実効値直流変換装置 |
JP3000745B2 (ja) * | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JPH05297591A (ja) * | 1992-04-20 | 1993-11-12 | Fujitsu Ltd | ポジ型放射線レジストとレジストパターンの形成方法 |
US5705503A (en) * | 1995-05-25 | 1998-01-06 | Goodall; Brian Leslie | Addition polymers of polycycloolefins containing functional substituents |
JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
KR100536824B1 (ko) * | 1996-03-07 | 2006-03-09 | 스미토모 베이클라이트 가부시키가이샤 | 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물 |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5763556A (en) * | 1996-05-21 | 1998-06-09 | Exxon Chemical Patents Inc. | Copolymers of ethylene and geminally disubstituted olefins |
KR100261022B1 (ko) * | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
KR100211548B1 (ko) * | 1996-12-20 | 1999-08-02 | 김영환 | 원자외선용 감광막 공중합체 및 그 제조방법 |
KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
KR100220953B1 (ko) * | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
-
1997
- 1997-01-10 KR KR1019970000472A patent/KR100225956B1/ko not_active IP Right Cessation
- 1997-12-31 TW TW086120047A patent/TW476868B/zh not_active IP Right Cessation
-
1998
- 1998-01-06 GB GB9800194A patent/GB2321060B/en not_active Expired - Fee Related
- 1998-01-07 US US09/003,780 patent/US6045967A/en not_active Expired - Lifetime
- 1998-01-08 JP JP00253598A patent/JP3506594B2/ja not_active Expired - Fee Related
- 1998-01-09 CN CN98100324A patent/CN1112603C/zh not_active Expired - Fee Related
- 1998-01-09 DE DE19800633A patent/DE19800633B4/de not_active Expired - Fee Related
- 1998-01-09 NL NL1008001A patent/NL1008001C2/nl not_active IP Right Cessation
- 1998-01-09 FR FR9800168A patent/FR2758333B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2321060B (en) | 2001-04-18 |
CN1112603C (zh) | 2003-06-25 |
GB2321060A (en) | 1998-07-15 |
US6045967A (en) | 2000-04-04 |
TW476868B (en) | 2002-02-21 |
GB9800194D0 (en) | 1998-03-04 |
JP3506594B2 (ja) | 2004-03-15 |
CN1191333A (zh) | 1998-08-26 |
JPH10207058A (ja) | 1998-08-07 |
NL1008001A1 (nl) | 1998-07-13 |
KR100225956B1 (ko) | 1999-10-15 |
FR2758333A1 (fr) | 1998-07-17 |
FR2758333B1 (fr) | 2003-05-02 |
DE19800633A1 (de) | 1998-07-16 |
DE19800633B4 (de) | 2007-03-08 |
KR19980065458A (ko) | 1998-10-15 |
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Free format text: 980916;980916 |
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Effective date: 20090801 |