MX9505068A - Metodo para fabricar un transistor de pelicula delgada organica y articulo obtenido por el mismo. - Google Patents

Metodo para fabricar un transistor de pelicula delgada organica y articulo obtenido por el mismo.

Info

Publication number
MX9505068A
MX9505068A MX9505068A MX9505068A MX9505068A MX 9505068 A MX9505068 A MX 9505068A MX 9505068 A MX9505068 A MX 9505068A MX 9505068 A MX9505068 A MX 9505068A MX 9505068 A MX9505068 A MX 9505068A
Authority
MX
Mexico
Prior art keywords
making
thin film
film transistor
organic thin
article made
Prior art date
Application number
MX9505068A
Other languages
English (en)
Spanish (es)
Inventor
Ananth Dodabalapur
Howard Edan Katz
Luisa Torsi
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of MX9505068A publication Critical patent/MX9505068A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Electroluminescent Light Sources (AREA)
MX9505068A 1994-12-09 1995-12-05 Metodo para fabricar un transistor de pelicula delgada organica y articulo obtenido por el mismo. MX9505068A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/353,032 US5574291A (en) 1994-12-09 1994-12-09 Article comprising a thin film transistor with low conductivity organic layer

Publications (1)

Publication Number Publication Date
MX9505068A true MX9505068A (es) 1997-01-31

Family

ID=23387469

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9505068A MX9505068A (es) 1994-12-09 1995-12-05 Metodo para fabricar un transistor de pelicula delgada organica y articulo obtenido por el mismo.

Country Status (8)

Country Link
US (1) US5574291A (cg-RX-API-DMAC7.html)
EP (1) EP0716458B1 (cg-RX-API-DMAC7.html)
JP (1) JP3145294B2 (cg-RX-API-DMAC7.html)
KR (1) KR100351009B1 (cg-RX-API-DMAC7.html)
CA (1) CA2160394C (cg-RX-API-DMAC7.html)
DE (1) DE69532794T2 (cg-RX-API-DMAC7.html)
MX (1) MX9505068A (cg-RX-API-DMAC7.html)
TW (1) TW279260B (cg-RX-API-DMAC7.html)

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JPH03236286A (ja) * 1990-02-14 1991-10-22 Toshiba Corp 有機膜素子
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
JP3224829B2 (ja) * 1991-08-15 2001-11-05 株式会社東芝 有機電界効果型素子

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DE69532794D1 (de) 2004-05-06
CA2160394C (en) 1999-04-13
EP0716458A3 (en) 1997-11-26
EP0716458B1 (en) 2004-03-31
JPH08228035A (ja) 1996-09-03
KR100351009B1 (ko) 2003-01-29
CA2160394A1 (en) 1996-06-10
JP3145294B2 (ja) 2001-03-12
TW279260B (cg-RX-API-DMAC7.html) 1996-06-21
EP0716458A2 (en) 1996-06-12
KR960026961A (ko) 1996-07-22
US5574291A (en) 1996-11-12
DE69532794T2 (de) 2005-03-17

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