KR960026961A - 박막 트랜지스터를 포함하는 아티클 및 박막 트랜지스터 제조 방법 - Google Patents

박막 트랜지스터를 포함하는 아티클 및 박막 트랜지스터 제조 방법 Download PDF

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KR960026961A
KR960026961A KR1019950049121A KR19950049121A KR960026961A KR 960026961 A KR960026961 A KR 960026961A KR 1019950049121 A KR1019950049121 A KR 1019950049121A KR 19950049121 A KR19950049121 A KR 19950049121A KR 960026961 A KR960026961 A KR 960026961A
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thin film
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film transistor
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organic material
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도다바라푸르 아나드
에단 키츠 하워드
토르시 루사
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유진 이. 패처
에이티 앤드 티 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

개선된 특성(예로, 20℃에서〉105온/오프 비율)을 갖는 유기 박막 트랜지스터를 설명하였다. 개선된 트랜지터는 낮은 전도성(20。C에서〈5×10-8S/㎝, 양호하게는 10-8이하이거나 10-9S/㎝)의 유기 능동층(16)을 포함한다. 그러한 물질을 생성하는 방법은 설명되었다. 급속 가열 냉각이 이점이 있는 결과를 갖는 것으로 맑혀졌다. 예시적인 양호한 물질은-헥사티에닐렌(

Description

박막 트랜지스터를 포함하는 아티클 및 박막 트랜지스터 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 예시적 TFT에 대한 개략도.

Claims (10)

  1. a) 유기 물잘의 층(16); b) 상기 물질의 층과 접촉하여 공간상 분리된 제1 및 제2접촉수단(12, 13) 및; c) 상기 제1 및 제2접 촉수단으로부터 분리되며, 인가되는 전압에 의해 상기 물질의 층을 통해 제1 및 제2접촉수단 간의 전류를 제어하도록 적합되는 제3접촉 수단(14)을 구비하는 박막 트랜지스터(20)을 포함하는 아티클에 있어서, d) 상기 유기 물질은-nT으로 구성된 군으로부터 선택되며, 상기 n은 4내지 9인 정수이며, 모두 단자 링의 4- 또는 5-탄소성의 대체물이 있거나 또는 없으며, e) 20。C에서 거의 5×10-8S/㎝의 전기 전도성을 갖는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  2. 제1항에 있어서, 상기 유기 물질은-6T 및-8T로 부터 선택되며, 모두 상기 대체물이 있거나 또는 없는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  3. 제2항에 있어서, 상기 유기 물질은 0.1중량 퍼센트 이하의 할로겐을 함유하는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  4. 제3항에 있어서, 상기 유기 물질은-6T이며 약 313。C의 녹는 점을 가지는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  5. 제4항에 있어서, 상기 유기 물질의 층은 적어도 2㎛의 평균 결정체 크기를 갖는 다결정체 층인 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  6. 제1항에 있어서, 상기 박막 트랜지스터는 105이상의 소스/드레인 전류의 온/오프 비율울 갖는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  7. 제1항에 있어서, 상기 유기 물질은 침적된 상태에서 거의 5×10-8S/㎝의 전도성을 갖는 것을 특징으로 하는 박막 트랜지스터를 포함하는 아티클.
  8. m=4, 6, 또는 8이며, 모두 단자링의 4-또는 5-탄소상으 대체물이 있거나 도는 없는-mT를 포함하며, a) 유기 용매에서, 5-위치에서 양자가 떨어져 나간-(m/2)티에닐을 제공하는 단계를 포함하는 방법에 의해 생성된-mT에서, 이-mT의 양(quanty)을 제공하는 단계; 및; b) 상기-mT의 층을 기판상에 침적하는 단계를 포함하는 박막 트랜지스터 제조방법에 있어서, c) 혼합물을 함유하는-mT가 형성되도록 유기 용매의 상기 양자가 떨어져 나간-(m/2)티에닐을 비할로겐 산화제에 접촉시키는 단계 및; d) 상기-mT를 상기 혼합물에서 분리하는 단계를 포함하는 것을 특징으로 하는 박막 트랜지스터 제조 방법.
  9. 제8항에 있어서, 상기 양자가 덜어져 나간-(m/2)티에닐은 5-리티오--테르티에닐이며,-6T인 것을 특징으로 하는 박막 트랜지스터 제조 방법.
  10. 제8항에 있어서, 단계 d)는-mT를 용매로 세척하는 단계를 포함하며, i) 비활성 상태하에서-mT의 재결정화 및 ⅱ) 진공화에서-mT의 승화 중 한가지 또는 둘 모두를 선택적으로 포함하는 것을 특징으로 하는 박막 트랜지스터 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950049121A 1994-12-09 1995-12-09 박막트랜지스터를포함하는장치및박막트랜지스터제조방법 KR100351009B1 (ko)

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US08/353,032 US5574291A (en) 1994-12-09 1994-12-09 Article comprising a thin film transistor with low conductivity organic layer
US353,032 1994-12-09

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CA2160394C (en) 1999-04-13
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