MX9401104A - Metodo para la fabricacion de una pieza sinterizada hecha con oxidos deindio y de estaño (oie) y laproduccion de una muestra. - Google Patents

Metodo para la fabricacion de una pieza sinterizada hecha con oxidos deindio y de estaño (oie) y laproduccion de una muestra.

Info

Publication number
MX9401104A
MX9401104A MX9401104A MX9401104A MX9401104A MX 9401104 A MX9401104 A MX 9401104A MX 9401104 A MX9401104 A MX 9401104A MX 9401104 A MX9401104 A MX 9401104A MX 9401104 A MX9401104 A MX 9401104A
Authority
MX
Mexico
Prior art keywords
oie
manufacture
indox
sample
production
Prior art date
Application number
MX9401104A
Other languages
English (en)
Inventor
Gilbert Rancoule
Jerald L Bliton
Original Assignee
Vesuvius Crucible Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius Crucible Co Inc filed Critical Vesuvius Crucible Co Inc
Publication of MX9401104A publication Critical patent/MX9401104A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La invención comprende no sólo un método para la fabricación de una piezasinterizada de alta densidad hecha con un compuesto óxido de indio y óxidode estaño (OIE) sino también la pieza elaborada según el método. El métodoproduce una pieza sinterizada OIE que se caracteriza por su altahomogeneidad destinada a la posterior deposición catódica de iones através del proceso de manufactura por el que se logra depositar las finasy transparentes capas del compuesto OIE, como conductor de electricidad,sobre sustratos transparentes.
MX9401104A 1993-02-11 1994-02-11 Metodo para la fabricacion de una pieza sinterizada hecha con oxidos deindio y de estaño (oie) y laproduccion de una muestra. MX9401104A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1623993A 1993-02-11 1993-02-11
US08/141,555 US5433901A (en) 1993-02-11 1993-10-26 Method of manufacturing an ITO sintered body

Publications (1)

Publication Number Publication Date
MX9401104A true MX9401104A (es) 1995-01-31

Family

ID=26688345

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9401104A MX9401104A (es) 1993-02-11 1994-02-11 Metodo para la fabricacion de una pieza sinterizada hecha con oxidos deindio y de estaño (oie) y laproduccion de una muestra.

Country Status (5)

Country Link
US (1) US5433901A (es)
CN (1) CN1119850A (es)
AU (1) AU6166294A (es)
MX (1) MX9401104A (es)
WO (1) WO1994018138A1 (es)

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US5580496A (en) * 1993-04-05 1996-12-03 Sumitomo Metal Mining Company Limited Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
US5656216A (en) * 1994-08-25 1997-08-12 Sony Corporation Method for making metal oxide sputtering targets (barrier powder envelope)
FR2724165A1 (fr) * 1994-09-07 1996-03-08 Serole Bernard Procede d'activation du frittage de ceramiques par controle stoechiometrique
DE19508898A1 (de) * 1995-03-11 1996-09-12 Leybold Materials Gmbh Indiumoxid/Zinnoxid Sputtertarget für die Kathodenzerstäubung
US6033620A (en) * 1995-04-18 2000-03-07 Tosoh Corporation Process of preparing high-density sintered ITO compact and sputtering target
KR100434646B1 (ko) * 1995-11-08 2004-09-01 도소 가부시키가이샤 소결된ito콤팩트의제조공정
JP3781878B2 (ja) * 1996-10-04 2006-05-31 同和鉱業株式会社 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP3931363B2 (ja) * 1996-12-20 2007-06-13 東ソー株式会社 Ｉｔｏ焼結体の製造法
DE19822570C1 (de) * 1998-05-20 1999-07-15 Heraeus Gmbh W C Verfahren zum Herstellen eines Indium-Zinn-Oxid-Formkörpers
JP3394449B2 (ja) * 1998-06-18 2003-04-07 日本碍子株式会社 薄壁ハニカム構造体およびその補強方法
KR100628542B1 (ko) * 1998-10-13 2006-09-27 도소 가부시키가이샤 금속산화물 소결체 및 그 용도
WO2001016047A2 (en) * 1999-08-18 2001-03-08 Rutgers, The State University Composite ceramic having nano-scale grain dimensions and method for manufacturing same
US6383345B1 (en) * 2000-10-13 2002-05-07 Plasmion Corporation Method of forming indium tin oxide thin film using magnetron negative ion sputter source
JP4918737B2 (ja) * 2001-03-23 2012-04-18 東ソー株式会社 酸化物焼結体およびスパッタリングターゲット
KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
KR101024160B1 (ko) * 2001-08-02 2011-03-22 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 전도막 및 이들의 제조방법
US20050016833A1 (en) * 2003-04-17 2005-01-27 Shannon Lynn Plasma sprayed indium tin oxide target for sputtering
WO2006038538A1 (ja) * 2004-10-01 2006-04-13 Mitsui Mining & Smelting Co., Ltd. スパッタリングターゲット用ターゲット材の製造方法
WO2007069415A1 (ja) * 2005-12-13 2007-06-21 Idemitsu Kosan Co., Ltd. 真空蒸着用焼結体
CN100402142C (zh) * 2006-03-29 2008-07-16 上海华谊丙烯酸有限公司 一种丙烯醛还原合成烯丙醇的催化剂及其制备方法
KR100787635B1 (ko) * 2007-01-22 2007-12-21 삼성코닝 주식회사 산화인듐주석 타겟, 이의 제조 방법 및 이로부터 제조된산화인듐주석 투명 전극
KR101294328B1 (ko) * 2007-06-28 2013-08-07 삼성코닝정밀소재 주식회사 산화 인듐 주석 타겟, 이의 제조 방법 및 이로부터 제조된산화 인듐 주석 투명 전극
CN101687708B (zh) * 2007-07-13 2013-01-02 Jx日矿日石金属株式会社 复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法
WO2009044891A1 (ja) * 2007-10-03 2009-04-09 Mitsui Mining & Smelting Co., Ltd. 酸化インジウム系透明導電膜及びその製造方法
GB2459917B (en) * 2008-05-12 2013-02-27 Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd A process for the manufacture of a high density ITO sputtering target
WO2010035715A1 (ja) * 2008-09-25 2010-04-01 日鉱金属株式会社 透明導電膜製造用の酸化物焼結体
KR20180063386A (ko) * 2009-11-19 2018-06-11 가부시키가이샤 아루박 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟
GB2482544A (en) * 2010-08-06 2012-02-08 Advanced Tech Materials Making high density indium tin oxide sputtering targets
CN102013279B (zh) * 2010-09-03 2012-02-22 大连博众应用材料有限公司 氧化铟锡靶材浆料的制备方法
CN102180653A (zh) * 2011-03-02 2011-09-14 北京冶科纳米科技有限公司 一种高密度氧化铟锡靶材的制备方法
CN102225862A (zh) * 2011-04-22 2011-10-26 辽宁中大超导材料有限公司 一种提高烧结体氧化镁靶材体积密度的方法
KR101727848B1 (ko) * 2013-03-13 2017-04-17 가부시키가이샤 후지미인코퍼레이티드 용사용 슬러리, 용사 피막 및 용사 피막의 형성 방법
US10196536B2 (en) * 2013-03-13 2019-02-05 Fujimi Incorporated Slurry for thermal spraying, thermal spray coating, and method for forming thermal spray coating
EP3190205A4 (en) 2014-09-03 2017-10-11 Fujimi Incorporated Slurry for thermal spraying, thermal sprayed film and thermal sprayed film formation method
JP6741410B2 (ja) 2015-09-25 2020-08-19 株式会社フジミインコーポレーテッド 溶射用スラリー、溶射皮膜および溶射皮膜の形成方法
CN105540647B (zh) * 2015-12-24 2017-04-19 株洲冶炼集团股份有限公司 热喷涂法制备旋转靶用ito粉及其生产方法和应用
CN110546299B (zh) * 2017-05-15 2022-09-30 三井金属矿业株式会社 透明导电膜用溅射靶
CN111394706B (zh) * 2020-03-06 2022-04-08 郑州大学 一种晶粒尺寸可控ito陶瓷靶材的制备方法
CN112592172A (zh) * 2020-12-15 2021-04-02 株洲火炬安泰新材料有限公司 一种制备ito烧结体的方法
CN114620996A (zh) * 2022-02-23 2022-06-14 洛阳晶联光电材料有限责任公司 一种高效太阳能电池用旋转陶瓷靶材
CN114890774B (zh) * 2022-04-20 2023-06-27 柳州华锡有色设计研究院有限责任公司 一种高均匀性ito靶材的制备方法

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DE3300525A1 (de) * 1983-01-10 1984-07-12 Merck Patent Gmbh, 6100 Darmstadt Targets fuer die kathodenzerstaeubung
US4624808A (en) * 1984-05-15 1986-11-25 Rockwell International Corporation Forming a ceramic by flocculation and centrifugal casting
US5047182A (en) * 1987-11-25 1991-09-10 Ceramics Process Systems Corporation Complex ceramic and metallic shaped by low pressure forming and sublimative drying
EP0342537B1 (en) * 1988-05-16 1995-09-06 Tosoh Corporation Process for the manufacture of a sputtering target for producing electroconductive transparent films
US5071800A (en) * 1989-02-28 1991-12-10 Tosoh Corporation Oxide powder, sintered body, process for preparation thereof and targe composed thereof
US4962071A (en) * 1989-05-01 1990-10-09 Tektronix, Inc. Method of fabricating a sintered body of indium tin oxide
JPH03207858A (ja) * 1990-01-08 1991-09-11 Nippon Mining Co Ltd Ｉｔｏスパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
US5433901A (en) 1995-07-18
AU6166294A (en) 1994-08-29
CN1119850A (zh) 1996-04-03
WO1994018138A1 (en) 1994-08-18

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