KR970011844A - 주석 산화물 박막의 제조방법 및 이 제조방법에 의해 제조된 주석 산화물 박막 및 이 박막을 이용하여 제조된 가스 감지용 센서 - Google Patents

주석 산화물 박막의 제조방법 및 이 제조방법에 의해 제조된 주석 산화물 박막 및 이 박막을 이용하여 제조된 가스 감지용 센서 Download PDF

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KR970011844A
KR970011844A KR1019950024120A KR19950024120A KR970011844A KR 970011844 A KR970011844 A KR 970011844A KR 1019950024120 A KR1019950024120 A KR 1019950024120A KR 19950024120 A KR19950024120 A KR 19950024120A KR 970011844 A KR970011844 A KR 970011844A
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South Korea
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thin film
tin oxide
oxide thin
manufacturing
sno
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KR1019950024120A
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KR100192228B1 (ko
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고석근
정형진
송석균
최원국
최동수
전진석
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한갑수
한국가스공사
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Priority to KR1019950024120A priority Critical patent/KR100192228B1/ko
Priority to US08/599,989 priority patent/US5989990A/en
Priority to JP8204910A priority patent/JP2877764B2/ja
Publication of KR970011844A publication Critical patent/KR970011844A/ko
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Publication of KR100192228B1 publication Critical patent/KR100192228B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0031—Bombardment of substrates by reactive ion beams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 주선 산화물 박막의 제조방법 및 이 제조방법에 의해 제조된 주석 산화물 박막 및 이 박막을 이용하여 제조된 가스 감지용 센서에 관한 것이다. 즉, 메탈 이온 소스와 브로드 가스 이온 소스로 구성되는 하이브리드 이온 빔 소스를 이용하여 Sn metal 증착시 중성의 산소를 실리콘 또는 글라스 기판 주위에 홀려주어 비화학양론적인 주석 산화물 박막을 증착하도록 하고, 가스 이온 소스를 이용하여 이온화된 산소를 불어넣어 주는 리엑티브한 증착법을 이용하여 화학양론을 만족하고 우선축 결정성이 우수한 SnO2(200), SnO2(10) 박막을 제조하였다. 또한 SnO2(200)의 경우에는 표면의 거칠기가 10Å인 박막이었다. 이러한 순수한 박막의 제조는 SnO2박막에 전기적, 화학적 특성을 증대시키기 위하여 도핑 원소를 첨가하는데 기준이 되는 중요한 제조공정이라 할 수 있다.

Description

주석 산화물 박막의 제조방법 및 이 제조방법에 의해 제조된 주석 산화물 박막 및 이 박막을 이용하여 제조된 가스 감지용 센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에서 사용된 하이브리드 이온 빔 (금속이온원+가스이온원)장치의 개략적인 구성도.

Claims (4)

  1. 고진공영역에서 주석(Sn)을 이온 클러스터 빔 증착법(ICBD)으로 증착하면서 시료 주위에 산소(O2)를 불어넣어 줌으로써 제조함을 특징으로 하는 주석 산화물 박막의 제조방법.
  2. 고진공영역에서 주석(Sn)을 이온 어시스트 증착법(IAD)으로 증착하고, 가스 이온 건을 사용하여 산소를 이온화시킨 후, 이온화된 산소를 시표표면에 흘려줌으로써 제조함을 특징으로 하는 주석 산화물 박막의 제조방법.
  3. 제2항에 의한 제조방법에 의해 제조되어 표면 거칠기가 10Å이고, SnO2(200)와 SnO2(110)의 결정성을 가시는 것을 특징으로 하는 주석 산화물 박막.
  4. 제1항 또는 제2항에 의한 제조방법중 선택된 어느 하나의 방법에 의해 제조된 박막을 이용하여 투명전극, 환원성 가스 또는 가연성 가스를 감지하는 것을 특징으로 하는 가스 감지용 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950024120A 1995-08-04 1995-08-04 주석 산화물 박막의 제조방법 KR100192228B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950024120A KR100192228B1 (ko) 1995-08-04 1995-08-04 주석 산화물 박막의 제조방법
US08/599,989 US5989990A (en) 1995-08-04 1996-02-14 Tinoxide thin film, preparation thereof, and gas detecting sensor using thereof
JP8204910A JP2877764B2 (ja) 1995-08-04 1996-08-02 酸化スズ薄膜の製造方法および該薄膜を用いたガス感知用センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950024120A KR100192228B1 (ko) 1995-08-04 1995-08-04 주석 산화물 박막의 제조방법

Publications (2)

Publication Number Publication Date
KR970011844A true KR970011844A (ko) 1997-03-27
KR100192228B1 KR100192228B1 (ko) 1999-06-15

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Country Link
US (1) US5989990A (ko)
JP (1) JP2877764B2 (ko)
KR (1) KR100192228B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100766153B1 (ko) * 1999-12-30 2007-10-10 젠백 에어로스페이스 코포레이션 투명성 산화인듐주석의 전자 빔 증발법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305660B1 (ko) 1999-02-09 2001-09-26 김희용 이중이온빔법을 이용하여 ＣｕＯ를 첨가한 황화합물계 가스 센서
JP4461634B2 (ja) * 2001-04-25 2010-05-12 株式会社デンソー 薄膜型ガスセンサ及びその製造方法
EP1820005B1 (en) * 2004-11-24 2019-01-09 Sensirion Holding AG Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate
US7914736B2 (en) * 2006-05-31 2011-03-29 Uchicago Argonne, Llc Semiconductor-based detection and decontamination system
WO2008143534A1 (en) * 2007-05-22 2008-11-27 Andreas Lassesson Method for the preparation of thin film metal oxide cluster fluid sensors
KR102077393B1 (ko) * 2018-06-04 2020-02-13 서울과학기술대학교 산학협력단 불소 도핑된 산화주석 투명전극 및 이의 제조방법

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US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
JPS5399762A (en) * 1977-02-12 1978-08-31 Futaba Denshi Kogyo Kk Device for producing compound semiconductor film
US4740267A (en) * 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
EP0305292B1 (en) * 1987-08-24 1995-12-27 Sumitomo Electric Industries Limited A process for preparing a thin film of superconducting compound oxide
DE3809734C1 (ko) * 1988-03-23 1989-05-03 Helmut Prof. Dr. 7805 Boetzingen De Haberland
US5196102A (en) * 1991-08-08 1993-03-23 Microelectronics And Computer Technology Corporation Method and apparatus for applying a compound of a metal and a gas onto a surface
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US5616061A (en) * 1995-07-05 1997-04-01 Advanced Vision Technologies, Inc. Fabrication process for direct electron injection field-emission display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100766153B1 (ko) * 1999-12-30 2007-10-10 젠백 에어로스페이스 코포레이션 투명성 산화인듐주석의 전자 빔 증발법

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JPH09170993A (ja) 1997-06-30
US5989990A (en) 1999-11-23
JP2877764B2 (ja) 1999-03-31
KR100192228B1 (ko) 1999-06-15

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