MX373567B - Combado de sensor de imagen usando tensión. - Google Patents

Combado de sensor de imagen usando tensión.

Info

Publication number
MX373567B
MX373567B MX2017003532A MX2017003532A MX373567B MX 373567 B MX373567 B MX 373567B MX 2017003532 A MX2017003532 A MX 2017003532A MX 2017003532 A MX2017003532 A MX 2017003532A MX 373567 B MX373567 B MX 373567B
Authority
MX
Mexico
Prior art keywords
image sensor
sensor chip
voltage
curved
substrate
Prior art date
Application number
MX2017003532A
Other languages
English (en)
Other versions
MX2017003532A (es
Inventor
Brian K Guenter
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Publication of MX2017003532A publication Critical patent/MX2017003532A/es
Publication of MX373567B publication Critical patent/MX373567B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Wire Bonding (AREA)
  • Facsimile Heads (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)

Abstract

Las técnicas para la fabricación de un chip sensor de imagen, que tiene una superficie curva, incluyen colocar un sustrato de combado sobre una primera superficie de un chip sensor de imagen. La primera superficie del chip sensor de imagen incluye los sensores de luz para generar las señales eléctricas en respuesta a la recepción de luz. La fabricación también incluye combar el sustrato de combado con el fin de impartir las fuerzas en el chip sensor de imagen para producir un chip sensor de imagen curvado. Una segunda superficie del chip sensor de imagen curvado puede adherirse a un sustrato posterior. La segunda superficie está opuesta a la primera superficie. El sustrato de combado puede retirarse de la primera superficie del chip sensor de imagen.
MX2017003532A 2014-09-19 2015-09-10 Combado de sensor de imagen usando tensión. MX373567B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/491,928 US10373995B2 (en) 2014-09-19 2014-09-19 Image sensor bending using tension
PCT/US2015/049276 WO2016044039A1 (en) 2014-09-19 2015-09-10 Image sensor bending using tension

Publications (2)

Publication Number Publication Date
MX2017003532A MX2017003532A (es) 2017-06-21
MX373567B true MX373567B (es) 2020-05-19

Family

ID=54199295

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017003532A MX373567B (es) 2014-09-19 2015-09-10 Combado de sensor de imagen usando tensión.

Country Status (11)

Country Link
US (1) US10373995B2 (es)
EP (1) EP3195591B1 (es)
JP (1) JP6726662B2 (es)
KR (1) KR102466067B1 (es)
CN (1) CN106716639B (es)
AU (1) AU2015318205B2 (es)
BR (1) BR112017003625B1 (es)
CA (1) CA2959749C (es)
MX (1) MX373567B (es)
RU (1) RU2700283C2 (es)
WO (1) WO2016044039A1 (es)

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Also Published As

Publication number Publication date
MX2017003532A (es) 2017-06-21
RU2017108537A (ru) 2018-09-17
KR102466067B1 (ko) 2022-11-10
WO2016044039A1 (en) 2016-03-24
BR112017003625B1 (pt) 2023-11-14
JP6726662B2 (ja) 2020-07-22
CA2959749A1 (en) 2016-03-24
AU2015318205A1 (en) 2017-03-16
CA2959749C (en) 2023-01-24
US10373995B2 (en) 2019-08-06
CN106716639B (zh) 2020-02-28
BR112017003625A2 (pt) 2017-12-05
EP3195591B1 (en) 2020-01-08
US20160086994A1 (en) 2016-03-24
AU2015318205B2 (en) 2019-04-11
EP3195591A1 (en) 2017-07-26
CN106716639A (zh) 2017-05-24
JP2017531320A (ja) 2017-10-19
KR20170056690A (ko) 2017-05-23
RU2700283C2 (ru) 2019-09-16
RU2017108537A3 (es) 2019-03-19

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