MX2008012109A - Composiciones fotorresistentes negativas. - Google Patents
Composiciones fotorresistentes negativas.Info
- Publication number
- MX2008012109A MX2008012109A MX2008012109A MX2008012109A MX2008012109A MX 2008012109 A MX2008012109 A MX 2008012109A MX 2008012109 A MX2008012109 A MX 2008012109A MX 2008012109 A MX2008012109 A MX 2008012109A MX 2008012109 A MX2008012109 A MX 2008012109A
- Authority
- MX
- Mexico
- Prior art keywords
- negative photoresist
- alkyl
- hydrogen
- photoresist compositions
- chlorine
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/117—Free radical
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
La presente invención se relaciona con una composición fotorresistente negativa comprende por lo menos un polímero soluble en álcali, en donde el polímero comprende por lo menos una unidad de estructura (I), en donde R´ es seleccionado independientemente del hidrógeno, alquil (C1-C4), cloro y bromo, y m es un número entero desde 1 hasta 4; b) por lo menos un monómero de la estructura (II), en donde, W es un grupo de enlace multivalente, R1 a R6 se seleccionan independientemente del hidrógeno, hidroxi, alquil (C1-C20) y cloro, X1 y X2 son independientemente oxígeno o N-R7, en donde R7 es hidrógeno o alquil (C1-C20), y n es un número entero igual a o mayor que 1, y, c) por lo menos un fotoiniciador. La invención también se relaciona con un proceso para producir una imagen de la composición fotorresistente negativa.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/390,716 US7601482B2 (en) | 2006-03-28 | 2006-03-28 | Negative photoresist compositions |
PCT/IB2007/000899 WO2007110773A2 (en) | 2006-03-28 | 2007-03-28 | Negative photoresist compositions |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2008012109A true MX2008012109A (es) | 2008-10-07 |
Family
ID=38541510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2008012109A MX2008012109A (es) | 2006-03-28 | 2007-03-28 | Composiciones fotorresistentes negativas. |
Country Status (11)
Country | Link |
---|---|
US (1) | US7601482B2 (es) |
EP (1) | EP2016464B1 (es) |
JP (1) | JP5076092B2 (es) |
KR (3) | KR20080104387A (es) |
CN (1) | CN101410756B (es) |
IL (1) | IL193903A0 (es) |
MX (1) | MX2008012109A (es) |
MY (1) | MY144195A (es) |
PT (1) | PT2016464T (es) |
TW (1) | TWI434139B (es) |
WO (1) | WO2007110773A2 (es) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5858987B2 (ja) * | 2010-05-04 | 2016-02-10 | エルジー・ケム・リミテッド | ネガティブフォトレジスト組成物および素子のパターニング方法 |
US8575248B2 (en) * | 2010-08-06 | 2013-11-05 | Promerus, Llc | Polymer composition for microelectronic assembly |
CN102608866A (zh) * | 2012-02-15 | 2012-07-25 | 潍坊星泰克微电子材料有限公司 | 一种丙烯酸正性光刻胶及其制备方法 |
JP5932501B2 (ja) * | 2012-06-06 | 2016-06-08 | キヤノン株式会社 | 硬化性組成物、及びこれを用いるパターン形成方法 |
US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
CN102830098A (zh) * | 2012-07-20 | 2012-12-19 | 江苏广播电视大学 | 一种测定苦味酸含量的荧光传感器及其制备方法 |
JP6233271B2 (ja) | 2013-12-27 | 2017-11-22 | Jsr株式会社 | 感光性樹脂組成物およびレジストパターンの製造方法 |
WO2016065276A1 (en) * | 2014-10-24 | 2016-04-28 | Polyera Corporation | Photopatternable compositions and methods of fabricating transistor devices using same |
EP3085661B1 (en) | 2015-04-21 | 2017-12-27 | JSR Corporation | Method of producing microfluidic device |
WO2017048710A1 (en) * | 2015-09-14 | 2017-03-23 | Carbon, Inc. | Light-curable article of manufacture with portions of differing solubility |
KR102631400B1 (ko) * | 2015-10-22 | 2024-01-29 | 삼성전자주식회사 | 감광성 조성물, 이로부터 제조된 양자점-폴리머 복합체 패턴, 및 이를 포함하는 전자 소자 |
US10647873B2 (en) | 2015-10-30 | 2020-05-12 | Carbon, Inc. | Dual cure article of manufacture with portions of differing solubility |
KR102527764B1 (ko) * | 2015-12-17 | 2023-05-02 | 삼성전자주식회사 | 감광성 조성물, 이를 제조하기 위한 방법, 및 이로부터 제조된 양자점-폴리머 복합체 패턴 |
US20170176856A1 (en) | 2015-12-21 | 2017-06-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working photoresist compositions for laser ablation and use thereof |
TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
JP7377206B2 (ja) | 2018-01-25 | 2023-11-09 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
KR102448220B1 (ko) | 2018-01-25 | 2022-09-27 | 메르크 파텐트 게엠베하 | 포토레지스트 제거제 조성물 |
JP7204760B2 (ja) | 2018-02-14 | 2023-01-16 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
KR102429543B1 (ko) | 2018-10-18 | 2022-08-04 | 주식회사 엘지화학 | 신규한 가교제 화합물 및 이를 이용하여 제조되는 고흡수성 수지 |
JP7200614B2 (ja) * | 2018-11-13 | 2023-01-10 | Jsr株式会社 | 感光性組成物、レジストパターンの形成方法、およびメッキ造形物の製造方法 |
EP3757174B1 (en) * | 2019-06-28 | 2022-04-20 | Agfa-Gevaert Nv | Radiation curable inkjet ink for alkaline etching or plating applications |
TWI824164B (zh) | 2019-07-11 | 2023-12-01 | 德商馬克專利公司 | 光阻移除劑組合物及自基板移除光阻膜之方法 |
KR20210150126A (ko) | 2020-06-03 | 2021-12-10 | 에스케이하이닉스 주식회사 | 네가티브형 레지스트 중합체 및 이를 포함하는 네가티브형 레지스트 조성물 |
US20220050378A1 (en) * | 2020-08-13 | 2022-02-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist material and patterning process |
TW202336531A (zh) | 2021-11-17 | 2023-09-16 | 德商馬克專利公司 | 藉濕式化學蝕刻以改善金屬結構製造的組合物和方法 |
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JP4569119B2 (ja) * | 2004-02-09 | 2010-10-27 | Jsr株式会社 | 突起および/またはスペーサー形成用の感放射線性樹脂組成物並びに突起および/またはスペーサーの形成方法 |
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-
2006
- 2006-03-28 US US11/390,716 patent/US7601482B2/en active Active
-
2007
- 2007-03-20 TW TW096109524A patent/TWI434139B/zh active
- 2007-03-28 KR KR1020087026396A patent/KR20080104387A/ko active Application Filing
- 2007-03-28 EP EP07734219.4A patent/EP2016464B1/en active Active
- 2007-03-28 KR KR1020147006631A patent/KR101779652B1/ko active IP Right Grant
- 2007-03-28 PT PT77342194T patent/PT2016464T/pt unknown
- 2007-03-28 JP JP2009502251A patent/JP5076092B2/ja active Active
- 2007-03-28 MX MX2008012109A patent/MX2008012109A/es not_active Application Discontinuation
- 2007-03-28 CN CN2007800114208A patent/CN101410756B/zh active Active
- 2007-03-28 WO PCT/IB2007/000899 patent/WO2007110773A2/en active Application Filing
- 2007-03-28 KR KR1020167035522A patent/KR20170002666A/ko not_active Application Discontinuation
-
2008
- 2008-09-04 IL IL193903A patent/IL193903A0/en unknown
- 2008-09-25 MY MYPI20083800A patent/MY144195A/en unknown
Also Published As
Publication number | Publication date |
---|---|
IL193903A0 (en) | 2009-09-22 |
US7601482B2 (en) | 2009-10-13 |
US20070231735A1 (en) | 2007-10-04 |
KR101779652B1 (ko) | 2017-09-18 |
MY144195A (en) | 2011-08-15 |
KR20170002666A (ko) | 2017-01-06 |
JP5076092B2 (ja) | 2012-11-21 |
PT2016464T (pt) | 2021-07-22 |
EP2016464A2 (en) | 2009-01-21 |
CN101410756A (zh) | 2009-04-15 |
WO2007110773A3 (en) | 2008-01-10 |
WO2007110773A2 (en) | 2007-10-04 |
EP2016464B1 (en) | 2021-04-28 |
KR20140043504A (ko) | 2014-04-09 |
CN101410756B (zh) | 2012-12-26 |
TW200801808A (en) | 2008-01-01 |
KR20080104387A (ko) | 2008-12-02 |
JP2009531730A (ja) | 2009-09-03 |
TWI434139B (zh) | 2014-04-11 |
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