TW200643622A - Antireflective hardmask composition and methods for using same - Google Patents
Antireflective hardmask composition and methods for using sameInfo
- Publication number
- TW200643622A TW200643622A TW095109575A TW95109575A TW200643622A TW 200643622 A TW200643622 A TW 200643622A TW 095109575 A TW095109575 A TW 095109575A TW 95109575 A TW95109575 A TW 95109575A TW 200643622 A TW200643622 A TW 200643622A
- Authority
- TW
- Taiwan
- Prior art keywords
- methods
- same
- formula
- hardmask composition
- antireflective
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Abstract
Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. In some embodiments of the present invention, antireflective hardmask compositions include: (a) a polymer component, which includes one or more of the monomeric units of Formulas I, II and III: Formula (I), Formula (II), Formula (III), (b) a crosslinking component; and (c) an acid catalyst.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20050038406 | 2005-05-09 | ||
KR1020050068348A KR100671115B1 (en) | 2005-05-09 | 2005-07-27 | Hardmask composition having antireflective property |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643622A true TW200643622A (en) | 2006-12-16 |
TWI328143B TWI328143B (en) | 2010-08-01 |
Family
ID=37653206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095109575A TWI328143B (en) | 2005-05-09 | 2006-03-21 | Antireflective hardmask composition and methods for using same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100671115B1 (en) |
TW (1) | TWI328143B (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100826104B1 (en) * | 2006-12-29 | 2008-04-29 | 제일모직주식회사 | High etch resistant hardmask composition having antireflective property and process of producing patterned materials by using the same |
KR100896451B1 (en) * | 2006-12-30 | 2009-05-14 | 제일모직주식회사 | HIGH ETCH RESISTANT HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTY?WITH IMPROVEMENT OF CARBON CONTENTS?and Process of producing patterned materials by using the same |
KR100819162B1 (en) * | 2007-04-24 | 2008-04-03 | 제일모직주식회사 | Hardmask composition having antireflective property and method of patterning materials using the same |
KR100908601B1 (en) * | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | Anti-reflective hard mask composition and patterning method of substrate material using same |
KR100930673B1 (en) | 2007-12-24 | 2009-12-09 | 제일모직주식회사 | Method for patterning materials using antireflective hard mask compositions |
KR100938445B1 (en) * | 2007-12-26 | 2010-01-25 | 제일모직주식회사 | Gap-fill composition and method of forming interconnection line for semiconductor device |
KR100844019B1 (en) * | 2008-05-30 | 2008-07-04 | 제일모직주식회사 | HIGH ETCH RESISTANT HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTY WITH IMPROVEMENT OF CARBON CONTENTS and Process of producing patterned materials by using the same |
KR101174086B1 (en) | 2008-12-31 | 2012-08-14 | 제일모직주식회사 | Polymer, polymer composition, under-layer composition of resist, and patterning method of materials using the same |
KR101212676B1 (en) | 2008-12-31 | 2012-12-14 | 제일모직주식회사 | Polymer, polymer composition, under-layer composition of resist, and patterning method of materials using the same |
KR101344794B1 (en) | 2009-12-31 | 2014-01-16 | 제일모직주식회사 | Aromatic ring-containing polymer for resist underlayer and resist underlayer composition including same |
KR101400183B1 (en) * | 2010-07-06 | 2014-05-30 | 제일모직 주식회사 | Aromatic ring-containing compound for resist underlayer, resist underlayer composition including same, and method of patterning device using same |
KR101344792B1 (en) | 2010-12-17 | 2013-12-24 | 제일모직주식회사 | Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns |
KR101423171B1 (en) * | 2010-12-30 | 2014-07-25 | 제일모직 주식회사 | Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns |
KR101747229B1 (en) | 2014-07-15 | 2017-06-14 | 삼성에스디아이 주식회사 | Hardmask composition and method of forming patterns using the hardmask composition |
KR101718102B1 (en) * | 2014-12-12 | 2017-04-04 | 최상준 | New polymers of bottom anti-reflective coating, and composition using same |
KR102244470B1 (en) | 2018-07-18 | 2021-04-23 | 삼성에스디아이 주식회사 | Polymer, organic layer composition and method of forming patterns |
KR102350590B1 (en) * | 2021-05-17 | 2022-01-12 | 영창케미칼 주식회사 | Spin on carbon hardmask compositions with low evaporation loss and patterning method by using the same |
-
2005
- 2005-07-27 KR KR1020050068348A patent/KR100671115B1/en active IP Right Grant
-
2006
- 2006-03-21 TW TW095109575A patent/TWI328143B/en active
Also Published As
Publication number | Publication date |
---|---|
KR100671115B1 (en) | 2007-01-17 |
KR20060116133A (en) | 2006-11-14 |
TWI328143B (en) | 2010-08-01 |
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