MX170146B - Composicion de capa protectora positiva - Google Patents

Composicion de capa protectora positiva

Info

Publication number
MX170146B
MX170146B MX017936A MX1793689A MX170146B MX 170146 B MX170146 B MX 170146B MX 017936 A MX017936 A MX 017936A MX 1793689 A MX1793689 A MX 1793689A MX 170146 B MX170146 B MX 170146B
Authority
MX
Mexico
Prior art keywords
less
standard
sensitizer
percent
sulfonic acid
Prior art date
Application number
MX017936A
Other languages
English (en)
Inventor
Koji Kuwana
Fumio Oi
Yasunori Uetani
Makoto Hanabata
Hirotoshi Nakanishi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of MX170146B publication Critical patent/MX170146B/es

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)

Abstract

La presente invención se refiere a una composición de capa protectora positiva, caracterizada porque incluye una resina soluble en álcali y, como un sensibilizador, un ester quinona diazido de ácido sulfónico de un compuesto de fenol, en donde: a) un patrón de área correspondiente al diester quinona diazido de ácido sulfónico del compuesto de fenol que no tiene menos de tres grupos hidroxil, no es menor del 40 por ciento de todas las áreas patrón correspondientes al sensibilizador en un patrón de HPLC (cromatografía de líquido a alta presión) medido con un detector primario usando luz ir (infraroja) que tiene una longitud de onda de 254 nm y, b) un área patrón correspondiente al ester completo del compuesto de fenol que no tiene menos de dos grupos hidroxil con la quinona diazido de ácido sulfónico que no es menor del 5 por ciento y no menos del 60 por ciento de todas las áreas patrón correspondientes al sensibilizador en el patrón HPLC.
MX017936A 1988-10-13 1989-10-11 Composicion de capa protectora positiva MX170146B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63258937A JP2715480B2 (ja) 1988-10-13 1988-10-13 ポジ型レジスト用組成物

Publications (1)

Publication Number Publication Date
MX170146B true MX170146B (es) 1993-08-09

Family

ID=17327114

Family Applications (1)

Application Number Title Priority Date Filing Date
MX017936A MX170146B (es) 1988-10-13 1989-10-11 Composicion de capa protectora positiva

Country Status (6)

Country Link
US (1) US5378586A (es)
EP (1) EP0363978A3 (es)
JP (1) JP2715480B2 (es)
KR (1) KR0159500B1 (es)
CA (1) CA2000552A1 (es)
MX (1) MX170146B (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP3070116B2 (ja) 1991-03-25 2000-07-24 住友化学工業株式会社 多価フェノール化合物およびそれを用いてなるポジ型レジスト組成物
JP2976597B2 (ja) * 1991-04-17 1999-11-10 住友化学工業株式会社 キノンジアジドスルホン酸エステルの製造方法
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
KR100277365B1 (ko) * 1992-11-11 2001-09-17 고사이 아끼오 포지티브형레제스트조성물
EP0886183A1 (en) * 1993-12-17 1998-12-23 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
EP0695740B1 (en) 1994-08-05 2000-11-22 Sumitomo Chemical Company Limited Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
KR100323831B1 (ko) 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
KR102060012B1 (ko) * 2013-02-15 2019-12-30 삼성디스플레이 주식회사 감광성 수지 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767092A (en) * 1951-12-06 1956-10-16 Azoplate Corp Light sensitive material for lithographic printing
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
NL247588A (es) * 1959-01-21
US4059449A (en) * 1976-09-30 1977-11-22 Rca Corporation Photoresist containing a thiodipropionate compound
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS58150948A (ja) * 1982-03-03 1983-09-07 Dainippon Ink & Chem Inc 感光性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS59165053A (ja) * 1983-03-11 1984-09-18 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
JPS60121445A (ja) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感光性樹脂組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
US4588670A (en) * 1985-02-28 1986-05-13 American Hoechst Corporation Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
JPS61257525A (ja) * 1985-05-10 1986-11-15 Mitsubishi Heavy Ind Ltd 浮防油堤装置
JP2568827B2 (ja) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPS63249152A (ja) * 1987-04-06 1988-10-17 Canon Inc 電子写真感光体
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
DE3842896C2 (de) * 1988-04-22 1998-07-02 Tokyo Ohka Kogyo Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
JPH01283556A (ja) * 1988-05-11 1989-11-15 Chisso Corp ポジ型フォトレジスト組成物
US5059507A (en) * 1988-06-13 1991-10-22 Sumitomo Chemical Company, Limited Positive resist composition containing quinone diazide sulfonic acid ester of a phenol compound and an alkali soluble resin
JP2800186B2 (ja) * 1988-07-07 1998-09-21 住友化学工業株式会社 集積回路製作用ポジ型レジスト組成物の製造方法
US4959292A (en) * 1988-07-11 1990-09-25 Olin Hunt Specialty Products Inc. Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
JP2636348B2 (ja) * 1988-07-20 1997-07-30 住友化学工業株式会社 ポジ型レジスト用組成物
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist

Also Published As

Publication number Publication date
JPH02103543A (ja) 1990-04-16
KR900006817A (ko) 1990-05-08
EP0363978A3 (en) 1991-06-05
CA2000552A1 (en) 1990-04-13
US5378586A (en) 1995-01-03
EP0363978A2 (en) 1990-04-18
KR0159500B1 (ko) 1998-12-15
JP2715480B2 (ja) 1998-02-18

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