KR900006817A - 레지스트 조성물 - Google Patents

레지스트 조성물

Info

Publication number
KR900006817A
KR900006817A KR1019890014661A KR890014661A KR900006817A KR 900006817 A KR900006817 A KR 900006817A KR 1019890014661 A KR1019890014661 A KR 1019890014661A KR 890014661 A KR890014661 A KR 890014661A KR 900006817 A KR900006817 A KR 900006817A
Authority
KR
South Korea
Prior art keywords
resist composition
resist
composition
Prior art date
Application number
KR1019890014661A
Other languages
English (en)
Other versions
KR0159500B1 (ko
Inventor
야스노리 우에따니
마꼬또 하나바따
히로또시 나까니시
고지 구와나
후미오 오이
Original Assignee
스미또모 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미또모 가가꾸 고오교 가부시끼가이샤 filed Critical 스미또모 가가꾸 고오교 가부시끼가이샤
Publication of KR900006817A publication Critical patent/KR900006817A/ko
Application granted granted Critical
Publication of KR0159500B1 publication Critical patent/KR0159500B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
KR1019890014661A 1988-10-13 1989-10-13 레지스트 조성물 KR0159500B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP258937/1988 1988-10-13
JP63258937A JP2715480B2 (ja) 1988-10-13 1988-10-13 ポジ型レジスト用組成物

Publications (2)

Publication Number Publication Date
KR900006817A true KR900006817A (ko) 1990-05-08
KR0159500B1 KR0159500B1 (ko) 1998-12-15

Family

ID=17327114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014661A KR0159500B1 (ko) 1988-10-13 1989-10-13 레지스트 조성물

Country Status (6)

Country Link
US (1) US5378586A (ko)
EP (1) EP0363978A3 (ko)
JP (1) JP2715480B2 (ko)
KR (1) KR0159500B1 (ko)
CA (1) CA2000552A1 (ko)
MX (1) MX170146B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP3070116B2 (ja) * 1991-03-25 2000-07-24 住友化学工業株式会社 多価フェノール化合物およびそれを用いてなるポジ型レジスト組成物
JP2976597B2 (ja) * 1991-04-17 1999-11-10 住友化学工業株式会社 キノンジアジドスルホン酸エステルの製造方法
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
KR100277365B1 (ko) * 1992-11-11 2001-09-17 고사이 아끼오 포지티브형레제스트조성물
US5609982A (en) * 1993-12-17 1997-03-11 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
EP0695740B1 (en) 1994-08-05 2000-11-22 Sumitomo Chemical Company Limited Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
KR102060012B1 (ko) * 2013-02-15 2019-12-30 삼성디스플레이 주식회사 감광성 수지 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767092A (en) * 1951-12-06 1956-10-16 Azoplate Corp Light sensitive material for lithographic printing
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
BE586713A (ko) * 1959-01-21
US4059449A (en) * 1976-09-30 1977-11-22 Rca Corporation Photoresist containing a thiodipropionate compound
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS58150948A (ja) * 1982-03-03 1983-09-07 Dainippon Ink & Chem Inc 感光性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
JPS59165053A (ja) * 1983-03-11 1984-09-18 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS60121445A (ja) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感光性樹脂組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
US4588670A (en) * 1985-02-28 1986-05-13 American Hoechst Corporation Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
JPS61257525A (ja) * 1985-05-10 1986-11-15 Mitsubishi Heavy Ind Ltd 浮防油堤装置
JP2568827B2 (ja) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPS63249152A (ja) * 1987-04-06 1988-10-17 Canon Inc 電子写真感光体
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
DE3842896C2 (de) * 1988-04-22 1998-07-02 Tokyo Ohka Kogyo Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
JPH01283556A (ja) * 1988-05-11 1989-11-15 Chisso Corp ポジ型フォトレジスト組成物
DE68927140T2 (de) * 1988-06-13 1997-04-30 Sumitomo Chemical Co Photolackzusammensetzung
JP2800186B2 (ja) * 1988-07-07 1998-09-21 住友化学工業株式会社 集積回路製作用ポジ型レジスト組成物の製造方法
US4959292A (en) * 1988-07-11 1990-09-25 Olin Hunt Specialty Products Inc. Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
JP2636348B2 (ja) * 1988-07-20 1997-07-30 住友化学工業株式会社 ポジ型レジスト用組成物
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist

Also Published As

Publication number Publication date
JP2715480B2 (ja) 1998-02-18
EP0363978A2 (en) 1990-04-18
CA2000552A1 (en) 1990-04-13
JPH02103543A (ja) 1990-04-16
MX170146B (es) 1993-08-09
EP0363978A3 (en) 1991-06-05
KR0159500B1 (ko) 1998-12-15
US5378586A (en) 1995-01-03

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Legal Events

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Year of fee payment: 15

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