KR970705835A - 활성 매트릭스 전자 형광 디스플레이 화소 및 제조방법(active matrix electroluminescent display pixel and method of fabricating same) - Google Patents

활성 매트릭스 전자 형광 디스플레이 화소 및 제조방법(active matrix electroluminescent display pixel and method of fabricating same)

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KR970705835A
KR970705835A KR1019970701166A KR19970701166A KR970705835A KR 970705835 A KR970705835 A KR 970705835A KR 1019970701166 A KR1019970701166 A KR 1019970701166A KR 19970701166 A KR19970701166 A KR 19970701166A KR 970705835 A KR970705835 A KR 970705835A
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drift region
insulating layer
forming
capacitor
depositing
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퓨-렁 슈에
알프레드 씨. 아이프리
게리 마크 돌리
로거 지. 스테와트
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윌리엄 제이. 버크
사르노프 코포레이션
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor

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  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

활성 매트릭스 전지 형광 디스플레이에서, 화소(102)는 EL셀(108) 및 스위칭 장치(104) 사이에서 형성되고 접지된 도전성 전계 실드(104)를 포함하고, 그래서 EL 셀에서 만들어진 어떤 전계는 스위칭 장치의 작동을 방해 하지 않는다. 상기 화소의 제조 방법에 있어서, 첫째 EL 셀 스위칭 회로가 형성되고, 그러면 절연층(224) 및 상기 전계 실드(104)는 스위칭 회로 상에 연속적으로 형성된다. 더욱이, 상기 스위칭 회로는 저전압 MOS 트랜지스터(110) 및 고전압 MOS 트랜지스터(112)를 포함한다. 활성화 되었을 때, 저전압 트랜지스터는 고전압 트랜지스터의 게이트를 충전함으로서 고전압 트랜지스터를 활성화한다. 부가적으로, 고전압 트랜지스터의 브레이크다운 전압을 개선하기 위하여, 캐패시터 분할 네트워트(400)는 상기 트랜지스터의 드리프트 영역에 근접하여 배치된다.

Description

활성 매트릭스 전자 형광 디스플레이 화소 및 제조방법(ACTIVE MATRIX ELECTROLUMINESCENT DISPLAY PIXEL AND METHOD OF FABRICATING SAME)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전계를 포함하는 AMELD 화소의 개략적인 단면도, 제3도는 AMELD 화소의 선택적인 실시예를 설명하는 개략적인 단면도, 및 제4도는 고전압 트래ㅈ니스터 내의 캐패시터 분할 네트워크의 단면도.

Claims (9)

  1. 드리프트 영역(202)에 의해 분리된 드레인 영역(234) 및 소스 영역(232); 상기 드리프트 영역에 평행하고 절연 층(212)에 의해 상기 드리프트 영역으로부터 분리되며 상기 드리프트 영역을 부분적으로 덮는 게이트 전극(218); 및 상기 드리프트 영역내에서 균일한 전계를 발생하기 위하여 상기 드리프트 영역에 인접하여 배치되고 상기 드리프트 영역으로부터 공간적으로 분리된 캐패시터 분할 네트워트(222)를 포함하는 것을 특징으로 하는 고전압 트랜지스터.
  2. 제1항에 있어서, 상기 캐패시터 분할 네트워크는, 고전압 전극(250); 상기 고전압 전극으로부터 전하를 축적하기 위하여 절연층(248)에 의해 상기 고전압 전극으로부터 공간적으로 분리된 다수의 제1도전성 엘리먼트(246); 상기 다수의 제1도전성 엘리먼트로부터 결합된 전하를 축적하기 위하여 절연층(212)에 의해 상기 다수의 제1도전성 엘리먼트로부터 공간적으로 분리된 다수의 제2도전성 엘리먼트(224)를 포함하고, 상기 제2트랜지스터의 드리프트 영역은 상기 엘리먼트에 평행하고 절연층에 의해 상기 다수의 제2도전성 엘리먼트로부터 공간적으로 분리되며, 상기 다수의 제2도전성 엘리먼트 상에 축적된 전하는 상기 드리프트 영역내에서 균일한 전계를 발생하는 것을 특징으로 하는 고전압 트랜지스터.
  3. 제2항에 있어서, 상기 각 제1도전성 엘리먼트는 상기 다수의 제2도전성 엘리먼트의 적어도 하나와 부분적으로 중복되는 것을 특징으로 하는 고전압 트랜지스터.
  4. 전자 형광 디스플레이 내에서 화소(102)를 만드는 방법에 있어서, 스위칭 회로에접속된 전자 형광 셀(108)을 통하여 전류를 제어하기 위하여 기판(206) 상에 스위칭 회로(106)를 형성하는 단계; 상기 스위칭 회로상에 절연층(212)을 증착하는 단계; 및 상기 절연층 및 상기 전자 형광 셀 사이에 상기 스위칭 회로로부터 상기 전자 형광 셀 내에서 전계를 절연하는 전계 실드(104)를 증착하는 단계를 포함하는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 상기 형성 단계는, 드레인 영역(234)과 소스 영역(232) 사이에 고전압 트랜지스터용드리프트 영역을 형성하는 단계 ; 상기 드리프트 영역상에 절연층(212)을 형성하는 단계; 및 상기 절연층 상에 게이트 전극(218)을 증착하는 단계를 더 포함하고, 상기 게이트 전극은 상기 전계 실드에 평행하며 상기 전계 실드 및 상기 게이트 전극이 저장 캐패시터(118)를 형성하도록 상기 드리프트 영역과 부분적으로 중복하는 것을 특징으로 하는 방법.
  6. 제5항에 있어서, 상기 전자 형광 셀에 상기 드레인 영역을 접속하기 위하여 상기 드레인 영역에 저항을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  7. 제4항에 있어서, 상기 형성단계는, 드레인 영역(234) 및 소스 영역(232) 사이에 트랜지스터(112)용 드리프트 영역을 형성하는 단계; 상기 드리프트 영역 상에 절연 층(212)을 형성하는 단계; 상기 절연층 상에 상기 드리프트 영역을 부분적으로 중복하는 게이트 전극(218)을 증착하는 단계; 상기 절연층 상에 상기 게이트 전극에 의해 중복되지 않은 상기 드리프트 영역의 일부와 중복하는 제1다수의 캐패시터 엘리먼트(224)를 증착하는 단계; 상기 캐패시터 엘리먼트 및 상기 게이트 전극 상에 제2절연 층(212)을 형성하는 단계; 상기 제2산화물층상에 상기 제1다수의 캐패시터 엘리먼트와 중복하는 제2다수의 캐패시터 엘리먼트(246)를 증착하는 단계; 상기 제2다수의 캐패시터 엘리먼트 상에 제3절연층(248)을 형성하는 단계; 및 상기 고전압 전극에 고전압이 인가될 때, 상기 제1 및 제2다수의 전극상에 축적돈 전하 및 전게가 상기 드르프트 영역에 균일하게 분포되도록 상기 제3절연층 상에 상기 전자 형광 셀의 고전압 전극(250)을 증착하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  8. 고전압 트랜지스터(112)를 제조하는 방법에 있어서, 드레인 영역(234) 및 소스 영역(232) 사이에 트랜지스터(112)용 드리프트 영역(202)을 형성하는 단계; 상기 드리프트 영역 상에 절연 층(212)을 형성하는 단계; 상기 절연층 상에 상기 드리프트 영역에 부분적으로 중복되는 게이트 전극(218)을 증착하는 단계; 및 상기 드리프트 영역내에서 균일한 전계를 발생하기 위하여 상기 드리프트 영역에 인접하게 배치된 상기 드리프트 영역에서 공간적으로 분리된 캐패시터 분할네트워크(222)를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  9. 제8항에 있어서, 상기 캐패시터 분할 네트워크를 형성하는 단계는, 상기 절연층 상에 상기 게이트 전극에 의해 중복되지 않은 상기 드리프트 영역의 일부와 중복하는 제1다수의 캐패시터 엘리먼트(224)를 증착하는 단계; 상기 캐패시터 엘리먼트 및 상기 게이트 전극 상에 제2절연층(212)을 형성하는 단계; 상기 제2산화물층상에 상기 제1캐패시터 엘리먼트와 부분적으로 중복하는 제2다수의 캐패시터 엘리먼트(246)를 증착하는 단계; 상기 제2다수의 캐패시터 엘리먼트 상에 제3절연층(248)을 형성하는 단계; 및 상기 고전압 전극에 고전압이 인가될 때, 상기 제1 및 제2 다수의 전극 상에 축적된 전하 및 전계가 상기 드리프트 영역에 균일하게 분포되도록 상기 제3절연층 상에 고전압 전극(250)을 증착하는 단계를 더 포함하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970701166A 1994-08-24 1995-08-24 활성매트릭스전자형광디스플레이화소및제조방법 KR100385378B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/295,374 US5587329A (en) 1994-08-24 1994-08-24 Method for fabricating a switching transistor having a capacitive network proximate a drift region
US08/295,374 1994-08-24

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DE69531055T2 (de) 2004-04-01
US5587329A (en) 1996-12-24
EP0776526A1 (en) 1997-06-04
WO1996006456A1 (en) 1996-02-29
JP2007134728A (ja) 2007-05-31
JPH11511898A (ja) 1999-10-12
KR100385378B1 (ko) 2003-07-16
JP5086613B2 (ja) 2012-11-28
US5736752A (en) 1998-04-07
US5932892A (en) 1999-08-03
EP0776526B1 (en) 2003-06-11
DE69531055D1 (de) 2003-07-17

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