CN113366644A - 阵列基板及其制作方法、显示面板 - Google Patents
阵列基板及其制作方法、显示面板 Download PDFInfo
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- CN113366644A CN113366644A CN201980002697.7A CN201980002697A CN113366644A CN 113366644 A CN113366644 A CN 113366644A CN 201980002697 A CN201980002697 A CN 201980002697A CN 113366644 A CN113366644 A CN 113366644A
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- 239000000758 substrate Substances 0.000 title claims abstract description 242
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 160
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 239000003990 capacitor Substances 0.000 claims description 123
- 238000003860 storage Methods 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
- G09G2320/0295—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel by monitoring each display pixel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
一种阵列基板及其制作方法、显示面板,该阵列基板中:基板(101)设置有第一晶体管(T1)和第二晶体管(T2),第一晶体管(T1)的第一极(5)与第二晶体管(T2)的栅极(3)电连接;导电层(1)设置于基板(101)上,包括沿第一方向(X)依次连接的第一导体部(11)、第一半导体部(12)、第二导体部(13);第一栅极绝缘层(21)设置于导电层(1)背离基板(101)的一侧,第一栅极层(3)设置于第一栅极绝缘层(21)背离基板(101)的一侧,形成第二晶体管(T2)的栅极(3);介电层(4)设置于基板(101)上以覆盖部分第一导体部(11)、部分第二导体部(12)及部分第一栅极层(3),且介电层(4)上设置的第一过孔(41)在基板(101)上的正投影与至少部分第一导体部(11)、至少部分第二导体部(13)以及第一栅极层(3)在基板(101)上的正投影重叠;第一源/漏层(5)设置于介电层(4)背离基板(101)的一侧,且覆盖第一过孔(41)。
Description
PCT国内申请,说明书已公开。
Claims (19)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/122197 WO2021103007A1 (zh) | 2019-11-29 | 2019-11-29 | 阵列基板及其制作方法、显示面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113366644A true CN113366644A (zh) | 2021-09-07 |
CN113366644B CN113366644B (zh) | 2024-04-09 |
Family
ID=76091127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201980002697.7A Active CN113366644B (zh) | 2019-11-29 | 2019-11-29 | 阵列基板及其制作方法、显示面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11469290B2 (zh) |
EP (1) | EP4068379A4 (zh) |
CN (1) | CN113366644B (zh) |
WO (1) | WO2021103007A1 (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050237441A1 (en) * | 2004-04-21 | 2005-10-27 | Fujitsu Display Technologies Corporation | Active matrix substrate for display device and its manufacture method |
KR20140079093A (ko) * | 2012-12-18 | 2014-06-26 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 및 그 제조방법 |
US20160104420A1 (en) * | 2014-10-08 | 2016-04-14 | Samsung Display Co., Ltd. | Organic light emitting diode display |
CN105629597A (zh) * | 2016-01-14 | 2016-06-01 | 京东方科技集团股份有限公司 | 阵列基板及其显示驱动方法、制作方法、显示装置 |
CN105789244A (zh) * | 2014-09-04 | 2016-07-20 | 乐金显示有限公司 | 有机发光显示面板及其制造方法 |
CN108206010A (zh) * | 2016-12-16 | 2018-06-26 | 乐金显示有限公司 | 薄膜晶体管基板及包括薄膜晶体管基板的显示装置 |
CN108766993A (zh) * | 2018-06-13 | 2018-11-06 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
WO2019041742A1 (en) * | 2017-08-31 | 2019-03-07 | Boe Technology Group Co., Ltd. | MATRIX SUBSTRATE, DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THE MATRIX SUBSTRATE |
CN113228291A (zh) * | 2019-09-27 | 2021-08-06 | 京东方科技集团股份有限公司 | 阵列基板、显示装置、阵列基板的制造方法、及像素驱动电路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100453635B1 (ko) * | 2001-12-29 | 2004-10-20 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 |
KR102430575B1 (ko) * | 2015-08-26 | 2022-08-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
TWI602306B (zh) * | 2016-07-05 | 2017-10-11 | Innolux Corp | 陣列基板結構與顯示裝置 |
US10615244B2 (en) * | 2018-04-20 | 2020-04-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel having reset signal lines to reset pixel units and display device with the same |
US10826026B2 (en) * | 2018-04-23 | 2020-11-03 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
KR102651596B1 (ko) * | 2018-06-29 | 2024-03-27 | 삼성디스플레이 주식회사 | 표시장치 |
-
2019
- 2019-11-29 WO PCT/CN2019/122197 patent/WO2021103007A1/zh unknown
- 2019-11-29 EP EP19945472.9A patent/EP4068379A4/en active Pending
- 2019-11-29 CN CN201980002697.7A patent/CN113366644B/zh active Active
- 2019-11-29 US US17/040,260 patent/US11469290B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050237441A1 (en) * | 2004-04-21 | 2005-10-27 | Fujitsu Display Technologies Corporation | Active matrix substrate for display device and its manufacture method |
KR20140079093A (ko) * | 2012-12-18 | 2014-06-26 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 및 그 제조방법 |
CN105789244A (zh) * | 2014-09-04 | 2016-07-20 | 乐金显示有限公司 | 有机发光显示面板及其制造方法 |
US20160104420A1 (en) * | 2014-10-08 | 2016-04-14 | Samsung Display Co., Ltd. | Organic light emitting diode display |
CN105629597A (zh) * | 2016-01-14 | 2016-06-01 | 京东方科技集团股份有限公司 | 阵列基板及其显示驱动方法、制作方法、显示装置 |
CN108206010A (zh) * | 2016-12-16 | 2018-06-26 | 乐金显示有限公司 | 薄膜晶体管基板及包括薄膜晶体管基板的显示装置 |
WO2019041742A1 (en) * | 2017-08-31 | 2019-03-07 | Boe Technology Group Co., Ltd. | MATRIX SUBSTRATE, DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THE MATRIX SUBSTRATE |
CN108766993A (zh) * | 2018-06-13 | 2018-11-06 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
CN113228291A (zh) * | 2019-09-27 | 2021-08-06 | 京东方科技集团股份有限公司 | 阵列基板、显示装置、阵列基板的制造方法、及像素驱动电路 |
Also Published As
Publication number | Publication date |
---|---|
EP4068379A1 (en) | 2022-10-05 |
US20210167162A1 (en) | 2021-06-03 |
WO2021103007A1 (zh) | 2021-06-03 |
EP4068379A4 (en) | 2023-05-17 |
CN113366644B (zh) | 2024-04-09 |
US11469290B2 (en) | 2022-10-11 |
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