KR970077120A - 노광 조건 측정 방법 - Google Patents

노광 조건 측정 방법 Download PDF

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Publication number
KR970077120A
KR970077120A KR1019970020248A KR19970020248A KR970077120A KR 970077120 A KR970077120 A KR 970077120A KR 1019970020248 A KR1019970020248 A KR 1019970020248A KR 19970020248 A KR19970020248 A KR 19970020248A KR 970077120 A KR970077120 A KR 970077120A
Authority
KR
South Korea
Prior art keywords
substrate
exposure
region
partial
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019970020248A
Other languages
English (en)
Korean (ko)
Inventor
노부타가 마고메
오사무 후루가와
Original Assignee
오노 시게오
니콘 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오노 시게오, 니콘 가부시키가이샤 filed Critical 오노 시게오
Publication of KR970077120A publication Critical patent/KR970077120A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019970020248A 1996-05-24 1997-05-23 노광 조건 측정 방법 Ceased KR970077120A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-153505 1996-05-24
JP8153505A JPH09320945A (ja) 1996-05-24 1996-05-24 露光条件測定方法及び露光装置

Publications (1)

Publication Number Publication Date
KR970077120A true KR970077120A (ko) 1997-12-12

Family

ID=15564024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970020248A Ceased KR970077120A (ko) 1996-05-24 1997-05-23 노광 조건 측정 방법

Country Status (3)

Country Link
US (1) US6583853B1 (enExample)
JP (1) JPH09320945A (enExample)
KR (1) KR970077120A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990030953A (ko) * 1997-10-07 1999-05-06 윤종용 웨이퍼 노광방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184687A (ja) * 2000-10-02 2002-06-28 Canon Inc 露光装置
US20030142282A1 (en) * 2002-01-30 2003-07-31 Nec Electronics Corporation Pattern forming method
KR100442879B1 (ko) * 2002-07-18 2004-08-02 삼성전자주식회사 목표 패턴에 최적화된 변형 조명을 제공하는 위상 격자패턴 설계 방법 및 이를 이용한 포토 마스크 제조 방법
DE10257766A1 (de) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4678372B2 (ja) 2004-06-29 2011-04-27 株式会社ニコン 管理方法及び管理システム、並びにプログラム
WO2010023751A1 (ja) * 2008-08-29 2010-03-04 パイオニア株式会社 電子ビーム描画装置の調整方法、及び電子ビーム描画装置を制御する制御装置の調整方法
NL2004716A (en) * 2009-06-17 2010-12-20 Asml Netherlands Bv Lithographic method and arrangement.
JP5785402B2 (ja) * 2011-03-03 2015-09-30 キヤノン株式会社 露光装置、デバイス製造方法および計測方法
CN103676494B (zh) * 2012-09-25 2015-11-18 上海微电子装备有限公司 用于扫描光刻机的逐场调焦调平方法
EP3214402B1 (en) * 2016-03-04 2018-11-28 Yokogawa Electric Corporation Measuring apparatus for measuring vibration or displacement and method for measuring vibration or displacement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267825A (ja) * 1993-03-16 1994-09-22 Nikon Corp 投影露光装置
JPH0729803A (ja) * 1993-07-14 1995-01-31 Canon Inc 走査型露光装置及び該装置を用いてデバイスを製造する方法
KR950004369A (ko) * 1993-07-01 1995-02-17 오노 시게오 투영 노광 장치 및 방법
KR950012568A (ko) * 1993-10-06 1995-05-16 오노 시게오 노광 장치
JPH09190966A (ja) * 1996-01-08 1997-07-22 Canon Inc 走査型露光装置及びそれを用いたデバイスの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS62298728A (ja) * 1986-06-18 1987-12-25 Fujitsu Ltd 照度測定装置
US4908656A (en) 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
US5473410A (en) 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP3235078B2 (ja) 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
JP3093528B2 (ja) 1993-07-15 2000-10-03 キヤノン株式会社 走査型露光装置
JP3100842B2 (ja) 1994-09-05 2000-10-23 キヤノン株式会社 半導体露光装置及び露光方法
JP3617558B2 (ja) 1995-11-17 2005-02-09 株式会社ニコン 露光量制御方法、露光装置、及び素子製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267825A (ja) * 1993-03-16 1994-09-22 Nikon Corp 投影露光装置
KR950004369A (ko) * 1993-07-01 1995-02-17 오노 시게오 투영 노광 장치 및 방법
JPH0729803A (ja) * 1993-07-14 1995-01-31 Canon Inc 走査型露光装置及び該装置を用いてデバイスを製造する方法
KR950012568A (ko) * 1993-10-06 1995-05-16 오노 시게오 노광 장치
JPH09190966A (ja) * 1996-01-08 1997-07-22 Canon Inc 走査型露光装置及びそれを用いたデバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990030953A (ko) * 1997-10-07 1999-05-06 윤종용 웨이퍼 노광방법

Also Published As

Publication number Publication date
US6583853B1 (en) 2003-06-24
JPH09320945A (ja) 1997-12-12

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