JPH09320945A - 露光条件測定方法及び露光装置 - Google Patents

露光条件測定方法及び露光装置

Info

Publication number
JPH09320945A
JPH09320945A JP8153505A JP15350596A JPH09320945A JP H09320945 A JPH09320945 A JP H09320945A JP 8153505 A JP8153505 A JP 8153505A JP 15350596 A JP15350596 A JP 15350596A JP H09320945 A JPH09320945 A JP H09320945A
Authority
JP
Japan
Prior art keywords
exposure
exposure condition
photosensitive substrate
wafer
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8153505A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09320945A5 (enExample
Inventor
Nobutaka Umagome
伸貴 馬込
Osamu Furukawa
治 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8153505A priority Critical patent/JPH09320945A/ja
Priority to KR1019970020248A priority patent/KR970077120A/ko
Publication of JPH09320945A publication Critical patent/JPH09320945A/ja
Priority to US09/435,367 priority patent/US6583853B1/en
Publication of JPH09320945A5 publication Critical patent/JPH09320945A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8153505A 1996-05-24 1996-05-24 露光条件測定方法及び露光装置 Pending JPH09320945A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8153505A JPH09320945A (ja) 1996-05-24 1996-05-24 露光条件測定方法及び露光装置
KR1019970020248A KR970077120A (ko) 1996-05-24 1997-05-23 노광 조건 측정 방법
US09/435,367 US6583853B1 (en) 1996-05-24 1999-11-08 Method of measuring exposure condition in projection exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8153505A JPH09320945A (ja) 1996-05-24 1996-05-24 露光条件測定方法及び露光装置

Publications (2)

Publication Number Publication Date
JPH09320945A true JPH09320945A (ja) 1997-12-12
JPH09320945A5 JPH09320945A5 (enExample) 2004-07-15

Family

ID=15564024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8153505A Pending JPH09320945A (ja) 1996-05-24 1996-05-24 露光条件測定方法及び露光装置

Country Status (3)

Country Link
US (1) US6583853B1 (enExample)
JP (1) JPH09320945A (enExample)
KR (1) KR970077120A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442879B1 (ko) * 2002-07-18 2004-08-02 삼성전자주식회사 목표 패턴에 최적화된 변형 조명을 제공하는 위상 격자패턴 설계 방법 및 이를 이용한 포토 마스크 제조 방법
WO2010023751A1 (ja) * 2008-08-29 2010-03-04 パイオニア株式会社 電子ビーム描画装置の調整方法、及び電子ビーム描画装置を制御する制御装置の調整方法
JP2011003894A (ja) * 2009-06-17 2011-01-06 Asml Netherlands Bv リソグラフィ方法および構成
US7941232B2 (en) 2004-06-29 2011-05-10 Nikon Corporation Control method, control system, and program
KR101388888B1 (ko) * 2011-03-03 2014-04-23 캐논 가부시끼가이샤 노광 장치 및 디바이스 제조 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990030953A (ko) * 1997-10-07 1999-05-06 윤종용 웨이퍼 노광방법
JP2002184687A (ja) * 2000-10-02 2002-06-28 Canon Inc 露光装置
US20030142282A1 (en) * 2002-01-30 2003-07-31 Nec Electronics Corporation Pattern forming method
DE10257766A1 (de) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
CN103676494B (zh) * 2012-09-25 2015-11-18 上海微电子装备有限公司 用于扫描光刻机的逐场调焦调平方法
EP3214402B1 (en) * 2016-03-04 2018-11-28 Yokogawa Electric Corporation Measuring apparatus for measuring vibration or displacement and method for measuring vibration or displacement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS62298728A (ja) * 1986-06-18 1987-12-25 Fujitsu Ltd 照度測定装置
US4908656A (en) 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
US5473410A (en) 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP3235078B2 (ja) 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
KR100301139B1 (ko) * 1993-07-01 2001-11-30 오노 시게오 투영노광장치및방법
JP3210145B2 (ja) * 1993-07-14 2001-09-17 キヤノン株式会社 走査型露光装置及び該装置を用いてデバイスを製造する方法
JP3093528B2 (ja) 1993-07-15 2000-10-03 キヤノン株式会社 走査型露光装置
JP3376688B2 (ja) * 1993-10-06 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
JP3100842B2 (ja) 1994-09-05 2000-10-23 キヤノン株式会社 半導体露光装置及び露光方法
JPH09190966A (ja) * 1996-01-08 1997-07-22 Canon Inc 走査型露光装置及びそれを用いたデバイスの製造方法
JP3617558B2 (ja) 1995-11-17 2005-02-09 株式会社ニコン 露光量制御方法、露光装置、及び素子製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442879B1 (ko) * 2002-07-18 2004-08-02 삼성전자주식회사 목표 패턴에 최적화된 변형 조명을 제공하는 위상 격자패턴 설계 방법 및 이를 이용한 포토 마스크 제조 방법
US7941232B2 (en) 2004-06-29 2011-05-10 Nikon Corporation Control method, control system, and program
WO2010023751A1 (ja) * 2008-08-29 2010-03-04 パイオニア株式会社 電子ビーム描画装置の調整方法、及び電子ビーム描画装置を制御する制御装置の調整方法
JP2011003894A (ja) * 2009-06-17 2011-01-06 Asml Netherlands Bv リソグラフィ方法および構成
US8796684B2 (en) 2009-06-17 2014-08-05 Asml Netherlands B.V. Lithographic method and arrangement
KR101388888B1 (ko) * 2011-03-03 2014-04-23 캐논 가부시끼가이샤 노광 장치 및 디바이스 제조 방법

Also Published As

Publication number Publication date
US6583853B1 (en) 2003-06-24
KR970077120A (ko) 1997-12-12

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