KR970067815A - 다층 구조의 도금층을 구비한 반도체 리드 프레임 - Google Patents

다층 구조의 도금층을 구비한 반도체 리드 프레임 Download PDF

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KR970067815A
KR970067815A KR1019960008361A KR19960008361A KR970067815A KR 970067815 A KR970067815 A KR 970067815A KR 1019960008361 A KR1019960008361 A KR 1019960008361A KR 19960008361 A KR19960008361 A KR 19960008361A KR 970067815 A KR970067815 A KR 970067815A
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plating layer
lead frame
semiconductor lead
alloy
multilayer structure
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KR1019960008361A
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KR0183645B1 (ko
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김중도
백영호
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이대원
삼성항공산업 주식회사
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Priority to KR1019960008361A priority Critical patent/KR0183645B1/ko
Priority to TW086100256A priority patent/TW387135B/zh
Priority to US08/792,211 priority patent/US5767574A/en
Priority to JP9018362A priority patent/JPH09266280A/ja
Publication of KR970067815A publication Critical patent/KR970067815A/ko
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Publication of KR0183645B1 publication Critical patent/KR0183645B1/ko

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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2924/156—Material
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    • H01L2924/15747—Copper [Cu] as principal constituent

Abstract

본 발명은 도금층의 구조가 개선된 반도체 리드 프레임에 관하여 개시한 것으로서, 본 발명의 특징에 의하면, 중간 도금층으로 형성한 Ni 도금층 위에 Pd 스트라이크 도금 층을 형성하고 최외곽 도금층으로 Pd-X조성합금 도금층을 형성한 다층 구조의 도금층을 구비한 것으로, Pd 스트라이크 도금층이 중간층인 Ni 도금층 표면의 기공을 은폐시키고 표면조도의 균일화로 최외곽의 Pd-X 조성 합금 도금층의 두께를 균일하게 유지하여 내식성을 높이는 동시에, 접착력 강화를 통해 생성 및 진행을 최소화시킴으로써 와이어 본딩성 및 납땜성 등 리드 프레임의 제반 특성을 향상시키고, 반도체 패키지 공정에 있어서의 높은 수율을 기대할 수 있어 생산성 향상을 도모할 수 있다.

Description

다층 구조의 도금층을 구비한 반도체 리드 프레임
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명에 따라 적용된 반도체 리드 프레임의 도금층 구조를 나타내 보인 개략적 단면도이다.

Claims (7)

  1. 반도체 리드 프레임을 이루고 있는 금속 소재의 기판과, 상기 기판 위에 형성된 Ni 도금층과, 상기 Ni 도금층 위에 형성된 Pd 스트라이크 도금 층과, Pd 스트라이크 도금층 위체 형성된 Pd-X 조성 합금 도금층을 포함하는 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  2. 제1항에 있어서, 상기 기판은 Cu, Cu 합금, Ni 합금 중 어느 하나인 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  3. 제1항 또는 제2항에 있어서, 상기 기판은 0.1 내지 3.0mm 범위의 두께로 형성된 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  4. 제1항에 있어서, 상기 Pd-X 조성 합금은 Pd를 주성분으로 하고 Au, Co, W, AG, Ti, Mo, Sn 중 어느 하나의 원소가 첨가되는 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  5. 제1항 또는 제4항에 있어서, 상기 Pd-X 조성 합금 도금층은 0.1 내지 2.0㎛ 범위의 두께로 형성되는 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  6. 제1항에 있어서, 상기 Ni 도금층은 0.1 내지 2.0㎛ 범위의 두께로 형성되는 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
  7. 제1항에 있어서, 상기 Pd 스트라이크 도금층은 0.0051 내지 0.05㎛ 범위의 두께로 형성되는 것을 특징으로하는 다층 구조의 도금층을 구비한 반도체 리드 프레임.
KR1019960008361A 1996-03-26 1996-03-26 다층 구조의 도금층을 구비한 반도체 리드 프레임 KR0183645B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019960008361A KR0183645B1 (ko) 1996-03-26 1996-03-26 다층 구조의 도금층을 구비한 반도체 리드 프레임
TW086100256A TW387135B (en) 1996-03-26 1997-01-11 Semiconductor lead frame
US08/792,211 US5767574A (en) 1996-03-26 1997-01-31 Semiconductor lead frame
JP9018362A JPH09266280A (ja) 1996-03-26 1997-01-31 半導体素子実装用リードフレーム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960008361A KR0183645B1 (ko) 1996-03-26 1996-03-26 다층 구조의 도금층을 구비한 반도체 리드 프레임

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KR970067815A true KR970067815A (ko) 1997-10-13
KR0183645B1 KR0183645B1 (ko) 1999-03-20

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JP (1) JPH09266280A (ko)
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TW (1) TW387135B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100708299B1 (ko) * 2005-04-12 2007-04-17 주식회사 아큐텍반도체기술 전자장치 제조용 다층금속 기판
KR20120121799A (ko) * 2011-04-27 2012-11-06 엘지이노텍 주식회사 리드프레임, 이를 이용한 반도체 패키지 및 그 제조방법

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Publication number Priority date Publication date Assignee Title
KR970067816A (ko) * 1996-03-26 1997-10-13 이대원 집적회로용 리드프레임 및 그 제조방법
US6521358B1 (en) * 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
US6180999B1 (en) * 1997-08-29 2001-01-30 Texas Instruments Incorporated Lead-free and cyanide-free plating finish for semiconductor lead frames
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