KR970030942A - 배면 접촉식 실리콘 태양열 전지와 그 제조 방법 - Google Patents
배면 접촉식 실리콘 태양열 전지와 그 제조 방법 Download PDFInfo
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- KR970030942A KR970030942A KR1019960055972A KR19960055972A KR970030942A KR 970030942 A KR970030942 A KR 970030942A KR 1019960055972 A KR1019960055972 A KR 1019960055972A KR 19960055972 A KR19960055972 A KR 19960055972A KR 970030942 A KR970030942 A KR 970030942A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 10
- 239000010703 silicon Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract 23
- 229910052751 metal Inorganic materials 0.000 claims abstract 7
- 239000002184 metal Substances 0.000 claims abstract 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract 5
- 239000000956 alloy Substances 0.000 claims abstract 5
- 239000000463 material Substances 0.000 claims abstract 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000002019 doping agent Substances 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000009792 diffusion process Methods 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000005488 sandblasting Methods 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
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- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
n형 도핑처리된 실리콘 및 p-n합금 접합 후면 접촉식 태양열 전지를 형성하기 위한 알루미늄인 주로 2가지 재료가 사용되는 개선된 태양열 전지의 설계 및 제조방법이 기술되어 있다. 알루미늄 합금 접합은 전지의(조명이 없는)후면 측면에 위치되어, 후면 접촉식 전지의 잇점을 갖는(접촉성 금속과 광 반사체인 도펀트로서)알루미늄의 소정의 특성을 결합한다. 전지 설계 및 제조방법은 전면 및 배면 표면 필드 소수 캐리어 미러, 산화층을 사용한 표면 패시베이션, 광 반사기와 같은 Al 접점의 사용, 연속적인 n+및 p+구역으로 인한 역 바이어스에 대한 방호물 및 표면 장착 기술을 사용한 상호 연결 전지용으로 적합한 개선된 버스 바 접점 설계인, 표면 조직과 같은 특성을 포함한다. 저항 접점 형성의 개선된 방법은 저항접점을 형성하기 위한 자체 정열 기술을 사용한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1은 본 발명의 바람직한 실시예인 수지형 웨브 실리콘 블랭크의 단면도.
Claims (32)
- 배면 접촉식 태양벌크층열 전지에 있어서, 전면과 배면을 갖는 제1전도 방식의 반도체 벌크층, 상기 배면 근처의 상기 벌크층내에 형성되고 그와 함께 다수의 반도체 접합을 형성하는 역전도방식의 다수의 이격된 도핑형 반도체 구역, 상기 다수의 이격된 도핑형 반도벌크층체 구역에 접속되고 상기 배면을 따라서 설치된 제1세트의 이격된 저항 접점, 상기 제1세트의 이격된 저항 접점사이의 공간내에 상기 벌크층의 상기 배면에 접속된 제2세트의 저항 접점 및 상기 제1세트의 이격된 저항 접점을 상기 제2세트의 저항 접점으로부터 전기 단열시키기 위한 단열 수단을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 제1세트의 저항 접점은 상호 평행한 전도스트립의 형태로 형성되어 있는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제2항에 있어서, 상기 전도 스트립은 버스 바 접점을 형성하도록 한쪽 단부가 결합되어 있는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 반도체 벌크층은 상기 제1전도 방식의 소수 캐리어의 확산 길이보다 작은 두께를 가지는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 벌크층은 n형 실리콘으로 형성되어 있는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제5항에 있어서, 상기 n형 실리콘은 수지형 웨브 실리콘인 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 제1세트의 이격된 저항 접점은 상기 벌크층 반도체 재료의 합금과, 상기 다수의 이격된 도핑형 반도체 구역을 위한 억셉터 도펀트를 포함하는 III족 금속을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제7항에 있어서, 상기 III족 금속은 알루미늄, 칼륨, 인듐으로 구성된 그룹으로부터 선택되는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 단열수단은 상기 제1세트의 저항 접점을 피복하는 단열층을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 전면상에 반사방지 코팅을 더 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 벌크층은 n형 재료로 형성되어 있고, 상기 전면과 상기 배면은 최초로 도핑된 n+인 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 제2세트의 저항 접점은 은, 알루미늄, 구리, 티탄, 팔라듐으로 구성된 그룹으로부터 선택된 저항 금속으로 구성되는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 제1항에 있어서, 상기 전면과 상기 배면중의 적어도 하나는 상기 벌크층에 걸리는 빛을 증가시킬 수 있는 조직을 갖는 것을 특징으로 하는 배면 접촉식 태양열 전지.
- 자체 정렬된 저항 접점을 갖는 배면 접촉식 태양열 전지의 제조 방법에 있어서, (a)전면과 배면을 갖는 제1전도 방식의 반도체 벌크층을 제공하는 단계와, (b)상기 배면 근처의 상기 벌크층에서 역전도 방식의 다수의 반도체 확산 구역을 형성하는 단계와, (c)저항 접촉 금속 재료를 사용하여 상기 배면상에 상기 확산 구역을 위한 제1세트의 이격된 저항 접점을 형성하는 단계와, (d)상기 제1세트의 저항 접점을 그들 사이의 공간으로부터 전기적으로 단열시키는 단계와, (e)저항 접촉 금속재료를 사용하여 상기 공간내의 상기 배면상에 제2세트의 저항 접점을 형성하되, 상기 제2세트의 저항 접점은 상기 제1세트의 저항 접점으로부터 전기적으로 단열되는 단계를 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기 (a)단계는 n형 실리콘에 의해서 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기(a)단계는 전면상에 n+표면확산층을 갖는 n방식 실리콘에 의해서 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기 (a)단계는 전면과 배면상에 n+표면 확산층을 갖는 n방식 실리콘에 의해서 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기(b) 및 (c)단계는 동시에 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기(b) 및 (c)단계는, 상기 벌크층의 배면에 III족 금속을 함유한 패턴형 층을 적용하고, 내부 구역의 벌크층 재료와 상기 팬턴형층이 합금을 형성하도록 상기 벌크층의 내부 구역에 인접한 배면을 가열하며, 상기 확산 구역은 III족 금속을 사용하여 형성되고 제1세트의 접점은 배면에 남는 냉각된 합금으로부터 형성되도록 합금을 냉각시킴으로써 동시에 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제19항에 있어서, 상기 패턴형층은 III족 금속과 벌크층 재료의 혼합물을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제20항에 있어서, 상기 혼합물은 알루미늄과 실리콘을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제19항에 있어서, 상기 패턴형 층은 다수의 개별 스트립을 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제22항에 있어서, 상기 개별 스트립은 서로 평행한 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제19항에 있어서, 상기 패턴형 층은 스크린 프린팅에 의해서 적용되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 전기적으로 단열하는 상기(d)단계는 제1세트의 저항 접점 위에 단열층을 형성하고 그들사이에 공간을 형성하고, 상기 벌크층의 상기 배면으로부터 상기 공간위에 놓인 상기 단열층 부분을 선택적으로 제거하여서 상기 단열층이 상기 제1세트의 저항 접점만을 피복하고 상기 공간은 노출되게 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제25항에 있어서, 단열층 부분을 선택적으로 제거하는 상기 단계는 공간 위에 놓인 단열층 부분을 에칭하는 단계를 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제26항에 있어서, 상기 에칭단계는 화학적으로 수행되는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제26항에 있어서, 상기 에칭 단계는 반응 이온 에칭인 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제25항에 있어서, 단열층 부분을 선택적으로 제거하는 상기 단계는 상기 공간위에 놓인 상기 단열층 부분을 샌드블라스팅(sandblasting) 하는 단계를 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제25항에 있어서, 단열층 부분을 선택적으로 제거하는 상기 단계는 상기 공간 위에 놓인 상기 단열층 부분을 이온 밀링하는 단계를 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기 벌크층의 상기 전면과 상기 배면중의 적어도 하나를 조직화하는 단계를 더 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.
- 제14항에 있어서, 상기 전면상에 반사방지 코팅을 적용하는 단계를 더 포함하는 것을 특징으로 하는 배면 접촉식 태양열 전지의 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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US08/561,761 | 1995-11-22 |
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CN (1) | CN1155106C (ko) |
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BR (1) | BR9605346A (ko) |
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1995
- 1995-11-22 US US08/561,761 patent/US5641362A/en not_active Expired - Lifetime
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1996
- 1996-07-16 CA CA002181281A patent/CA2181281C/en not_active Expired - Fee Related
- 1996-07-17 ES ES96305261T patent/ES2216041T3/es not_active Expired - Lifetime
- 1996-07-17 TW TW085108701A patent/TW318286B/zh active
- 1996-07-17 EP EP96305261A patent/EP0776051B1/en not_active Expired - Lifetime
- 1996-07-17 DE DE69631815T patent/DE69631815T2/de not_active Expired - Lifetime
- 1996-10-29 BR BR9605346A patent/BR9605346A/pt not_active Application Discontinuation
- 1996-11-06 AU AU70630/96A patent/AU717476B2/en not_active Expired
- 1996-11-15 CN CNB961144831A patent/CN1155106C/zh not_active Expired - Lifetime
- 1996-11-15 JP JP8318487A patent/JPH09172196A/ja active Pending
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Cited By (2)
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KR101472018B1 (ko) * | 2008-10-13 | 2014-12-15 | 엘지전자 주식회사 | 후면전극 태양전지 및 그 제조방법 |
KR101144483B1 (ko) * | 2009-09-30 | 2012-05-11 | 엘지이노텍 주식회사 | 태양광 발전장치, 이를 포함하는 태양광 발전 시스템 및 이의 제조방법 |
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US5641362A (en) | 1997-06-24 |
JPH09172196A (ja) | 1997-06-30 |
MX9603156A (es) | 1997-07-31 |
EP0776051B1 (en) | 2004-03-10 |
TW318286B (ko) | 1997-10-21 |
DE69631815T2 (de) | 2005-02-03 |
EP0776051A2 (en) | 1997-05-28 |
AU717476B2 (en) | 2000-03-30 |
ES2216041T3 (es) | 2004-10-16 |
AU7063096A (en) | 1997-05-29 |
BR9605346A (pt) | 1998-07-28 |
CA2181281C (en) | 2005-05-10 |
CN1155106C (zh) | 2004-06-23 |
EP0776051A3 (en) | 1998-07-08 |
CN1158011A (zh) | 1997-08-27 |
CA2181281A1 (en) | 1997-05-23 |
DE69631815D1 (de) | 2004-04-15 |
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