KR970024275A - 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법 - Google Patents

안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR970024275A
KR970024275A KR1019950034699A KR19950034699A KR970024275A KR 970024275 A KR970024275 A KR 970024275A KR 1019950034699 A KR1019950034699 A KR 1019950034699A KR 19950034699 A KR19950034699 A KR 19950034699A KR 970024275 A KR970024275 A KR 970024275A
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South Korea
Prior art keywords
semiconductor substrate
conductivity type
transistor
manufacturing
operating area
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KR1019950034699A
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English (en)
Inventor
이상용
김수성
김준수
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950034699A priority Critical patent/KR970024275A/ko
Priority to GB9613519A priority patent/GB2306046A/en
Priority to US08/674,092 priority patent/US5872391A/en
Priority to DE19636741A priority patent/DE19636741A1/de
Priority to JP8259614A priority patent/JPH09115918A/ja
Publication of KR970024275A publication Critical patent/KR970024275A/ko
Priority to US09/152,945 priority patent/US6114212A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Abstract

본 발명은 스위칭 트랜지스터에 관한 것으로서, 에미터 영역을 형성하는 데에 있어서, 에미터 영역의 중앙 부분이 패이도록 형성하여 에미터 중앙 부분의 두께를 양 끝부분의 두께보다 작게 형성한다. 그럼으로써, 스위칭 오프시 에미터 중앙 부분으로 전류가 집중되는 현상을 방지하도록 하는 스위칭 트랜지스터이다.

Description

안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 스위칭 트랜지스터의 단면도이고,
제4도와 제5도는 본 발명에 의한 스위칭 트랜지스터의 에미터 확산 영역을 형성하는 방법을 그 공정 순서에 따라 도시한 단면도이고,
제6도의 (가)는 종래의 스위칭 트랜지스터의 반쪽 셀에 스위치 오프 과정에서 나타나는 전류의 흐름을 도시한 도면이고,
제6도의 (나)는 본 발명에 의한 스위칭 트랜지스터의 반쪽 셀에 스위치 오프 과정에서 나타나는 전류의 흐름을 도시한 도면이다.

Claims (2)

  1. 제1 도전형의 반도체 기판, 상기 반도체 기판에 형성되어 있는 제2 도전형의 베이스층, 상기 베이스층에 형성되어 있으며 중심 부분의 깊이가 양 끝의 깊이보다 더 얕은 제1 도전형의 에미터 영역을 포함하는 반도체 장치.
  2. 제2 도전형의 베이스층이 형성되어 있는 반도체 기판의 표면에 산화막을 적층하는 제1 단계, 상기 산화막을 상기 반도체 기판의 중앙 부분으로 갈수록 패턴의 간격이 작아지도록 사진식각하여 패터닝하는 제2 단계, 상기 반도체 기판에 제1 도전형의 이온을 고농도로 주입하는 제3 단계를 포함하는 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950034699A 1995-10-10 1995-10-10 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법 KR970024275A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950034699A KR970024275A (ko) 1995-10-10 1995-10-10 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법
GB9613519A GB2306046A (en) 1995-10-10 1996-06-27 Semiconductor device with a concave junction
US08/674,092 US5872391A (en) 1995-10-10 1996-07-01 Bipolar junction transistors having an increased safe operating area
DE19636741A DE19636741A1 (de) 1995-10-10 1996-09-10 Einen erhöhten zulässigen Arbeitsbereich aufweisende Bipolartransistoren und ihre Herstellungsverfahren
JP8259614A JPH09115918A (ja) 1995-10-10 1996-09-30 トランジスタおよびその製造方法
US09/152,945 US6114212A (en) 1995-10-10 1998-09-14 Methods of fabricating bipolar junction transistors having an increased safe operating area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034699A KR970024275A (ko) 1995-10-10 1995-10-10 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법

Publications (1)

Publication Number Publication Date
KR970024275A true KR970024275A (ko) 1997-05-30

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KR1019950034699A KR970024275A (ko) 1995-10-10 1995-10-10 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법

Country Status (5)

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US (2) US5872391A (ko)
JP (1) JPH09115918A (ko)
KR (1) KR970024275A (ko)
DE (1) DE19636741A1 (ko)
GB (1) GB2306046A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010003431A (ko) * 1999-06-23 2001-01-15 윤종용 이더넷 스위치에서 오버플로우 발생 방지를 위한 데이터전송속도 자동 조정장치 및 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211028B1 (en) * 1999-02-05 2001-04-03 Taiwan Semiconductor Manufacturing Company Twin current bipolar device with hi-lo base profile
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
KR100431183B1 (ko) * 2001-12-20 2004-05-12 삼성전기주식회사 바이폴라 트랜지스터와 그 제조방법
US20050259368A1 (en) * 2003-11-12 2005-11-24 Ted Letavic Method and apparatus of terminating a high voltage solid state device
JP2007220865A (ja) * 2006-02-16 2007-08-30 Sumitomo Chemical Co Ltd ３族窒化物半導体発光素子およびその製造方法
KR101454470B1 (ko) * 2013-03-22 2014-10-23 파워큐브세미 (주) 슈퍼정션 반도체 및 제조방법

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GB2026236B (en) * 1978-07-20 1983-02-02 Gen Electric Power transistor
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
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EP0176778B1 (de) * 1984-09-28 1991-01-16 Siemens Aktiengesellschaft Verfahren zum Herstellen eines pn-Übergangs mit hoher Durchbruchsspannung
EP0262356B1 (de) * 1986-09-30 1993-03-31 Siemens Aktiengesellschaft Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit
US5237200A (en) * 1989-07-28 1993-08-17 Hitachi, Ltd. Semiconductor bipolar transistor with concentric regions
US5229313A (en) * 1989-09-29 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having multilayer structure
EP0632502B1 (en) * 1993-06-28 1999-03-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Bipolar power transistor with high collector breakdown voltage and related manufacturing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010003431A (ko) * 1999-06-23 2001-01-15 윤종용 이더넷 스위치에서 오버플로우 발생 방지를 위한 데이터전송속도 자동 조정장치 및 방법

Also Published As

Publication number Publication date
GB2306046A (en) 1997-04-23
GB9613519D0 (en) 1996-08-28
US6114212A (en) 2000-09-05
DE19636741A1 (de) 1997-04-17
US5872391A (en) 1999-02-16
JPH09115918A (ja) 1997-05-02

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