KR970018103A - 반도체소자의 콘택홀 형성방법 - Google Patents

반도체소자의 콘택홀 형성방법 Download PDF

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Publication number
KR970018103A
KR970018103A KR1019950031254A KR19950031254A KR970018103A KR 970018103 A KR970018103 A KR 970018103A KR 1019950031254 A KR1019950031254 A KR 1019950031254A KR 19950031254 A KR19950031254 A KR 19950031254A KR 970018103 A KR970018103 A KR 970018103A
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South Korea
Prior art keywords
pattern
oxide film
contact hole
polysilicon pattern
polysilicon
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KR1019950031254A
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English (en)
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KR0172249B1 (ko
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황성보
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김주용
현대전자산업 주식회사
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Priority to KR1019950031254A priority Critical patent/KR0172249B1/ko
Publication of KR970018103A publication Critical patent/KR970018103A/ko
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Publication of KR0172249B1 publication Critical patent/KR0172249B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 콘택을 형성 방법에 관한 것으로, 미세한 콘택홀을 형성하기 위하여 다결정실리콘패턴을 형성하여 하드마스크로 사용하고, 상기 다결정실리콘패턴의 상부 및 측벽에 부피 팽창된 산화막을 형성하여 이 산화막을 콘택홀 마스크로 사용하므로써, 미세 콘택홀을 형성하는 것이다.

Description

반도체소자의 콘택홀 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명에 의해 다결정실리콘 박막의 산화막에 의한 저기정합 콘택을 형성하는 단면도.

Claims (5)

  1. 실리콘기판의 상부에 절연막을 증착하는 단계와, 상기 절연막 상부에 다결정실리콘을 증착하는 단계와, 상기 다결정실리콘층의 상부에 콘택마스크용 감광막 패턴을 형성하는 단계와, 상기 감광막패턴을 사용하여 다결정실리콘층을 식각하여 다결정 실리콘 패턴을 형성하는 단계와, 상기 다결정실리콘 패턴의 일정두께를 산화시켜 다결정실리콘 패턴의 상부와 측벽에 산화막을 형성하는 단계와, 상기 산화막을 마스크로 이용하여 노출된 하부의 절연막을 식각하여 반도체기판이 노출된 콘택홀을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
  2. 제1항 에있어서, 상기 다결정실리콘층이 1000Å 내지 2000Å 두께로 증착되는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
  3. 제1항에 있어서, 상기 다결정실리콘 패턴을 800℃ 내지 900℃ 온도에서 건식산화시켜 산화막을 형성하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
  4. 제1항에 있어서, 상기 다결정실리콘 패턴의 상부 및 측벽으로 형성되는 산화막의 두께는 500Å 내지 2000Å인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
  5. 제1항에 있어서, 상기 다결정실리콘 패턴중 산화막으로 형성되지 않고 남아있는 다결정실리콘 패턴의 두께가 750Å 내지 1500Å인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950031254A 1995-09-21 1995-09-21 반도체소자의 콘택홀 형성방법 KR0172249B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031254A KR0172249B1 (ko) 1995-09-21 1995-09-21 반도체소자의 콘택홀 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031254A KR0172249B1 (ko) 1995-09-21 1995-09-21 반도체소자의 콘택홀 형성방법

Publications (2)

Publication Number Publication Date
KR970018103A true KR970018103A (ko) 1997-04-30
KR0172249B1 KR0172249B1 (ko) 1999-03-30

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KR1019950031254A KR0172249B1 (ko) 1995-09-21 1995-09-21 반도체소자의 콘택홀 형성방법

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KR (1) KR0172249B1 (ko)

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KR0172249B1 (ko) 1999-03-30

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