KR970009670B1 - Method of manufacture for semiconductor laserdiode - Google Patents

Method of manufacture for semiconductor laserdiode Download PDF

Info

Publication number
KR970009670B1
KR970009670B1 KR94006599A KR19940006599A KR970009670B1 KR 970009670 B1 KR970009670 B1 KR 970009670B1 KR 94006599 A KR94006599 A KR 94006599A KR 19940006599 A KR19940006599 A KR 19940006599A KR 970009670 B1 KR970009670 B1 KR 970009670B1
Authority
KR
South Korea
Prior art keywords
layer
metal layer
forming
current blocking
etching
Prior art date
Application number
KR94006599A
Other languages
English (en)
Inventor
Seung-Ki Yang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to KR94006599A priority Critical patent/KR970009670B1/ko
Priority to US08/327,047 priority patent/US5474954A/en
Priority to JP27005794A priority patent/JP3501520B2/ja
Application granted granted Critical
Publication of KR970009670B1 publication Critical patent/KR970009670B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
KR94006599A 1994-03-30 1994-03-30 Method of manufacture for semiconductor laserdiode KR970009670B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR94006599A KR970009670B1 (en) 1994-03-30 1994-03-30 Method of manufacture for semiconductor laserdiode
US08/327,047 US5474954A (en) 1994-03-30 1994-10-21 Method of manufacturing semiconductor laser diode using self alignment
JP27005794A JP3501520B2 (ja) 1994-03-30 1994-11-02 半導体レーザーダイオード製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94006599A KR970009670B1 (en) 1994-03-30 1994-03-30 Method of manufacture for semiconductor laserdiode

Publications (1)

Publication Number Publication Date
KR970009670B1 true KR970009670B1 (en) 1997-06-17

Family

ID=19380033

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94006599A KR970009670B1 (en) 1994-03-30 1994-03-30 Method of manufacture for semiconductor laserdiode

Country Status (3)

Country Link
US (1) US5474954A (ko)
JP (1) JP3501520B2 (ko)
KR (1) KR970009670B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101286210B1 (ko) * 2012-03-12 2013-07-15 고려대학교 산학협력단 발광 소자 및 그 제조 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640420A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Verfahren zur Herstellung eines Stegwellenleiters in III-V-Verbindungshalbleiter-Schichtstrukturen und Halbleiterlaservorrichtung
DE19813180A1 (de) * 1998-03-25 1999-10-07 Siemens Ag Verfahren zur Herstellung eines Stegwellenleiters in III-V-Verbindungshalbleiter-Schichtstrukturen und Halbleiterlaservorrichtung besonders für niedere Serienwiderstände
JP4189610B2 (ja) 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法
TW417320B (en) * 1998-06-18 2001-01-01 Ind Tech Res Inst Self-aligned method for fabricating a ridge-waveguide semiconductor laser diode
EP0989643B1 (en) * 1998-09-25 2006-08-09 Mitsubishi Chemical Corporation Semiconductor light-emitting device and manufacturing method for the same
JP3982985B2 (ja) * 1999-10-28 2007-09-26 シャープ株式会社 半導体レーザ素子の製造方法
TW443019B (en) * 2000-02-18 2001-06-23 Ind Tech Res Inst Self-aligned manufacturing method and the structure of ridge-waveguide semiconductor laser
DE10219886B4 (de) 2002-05-03 2007-10-04 Chunghwa Telecom Co.Ltd. Selbstjustierendes Verfahren zur Herstellung eines Stegwellenleiter-Halbleiterlasers
JP4885434B2 (ja) * 2003-11-27 2012-02-29 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
JPWO2005088790A1 (ja) * 2004-03-15 2008-01-31 三洋電機株式会社 半導体レーザ素子、およびその製造方法
JP4956928B2 (ja) * 2004-09-28 2012-06-20 日亜化学工業株式会社 半導体装置
KR100631876B1 (ko) * 2004-10-29 2006-10-09 삼성전기주식회사 반도체 레이저 소자의 제조 방법
JP4091647B2 (ja) * 2006-07-21 2008-05-28 三菱電機株式会社 半導体光素子の製造方法
US7833695B2 (en) * 2007-05-31 2010-11-16 Corning Incorporated Methods of fabricating metal contact structures for laser diodes using backside UV exposure
US8073031B2 (en) * 2008-03-03 2011-12-06 Sharp Kabushiki Kaisha Laser diode with improved heat dissipation
JP7107849B2 (ja) * 2016-11-01 2022-07-27 ソニーセミコンダクタソリューションズ株式会社 半導体素子の製造方法
CN108847574B (zh) * 2018-06-26 2020-06-26 华慧芯科技（天津）有限公司 一种脊波导电极开窗的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283685A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
US5256580A (en) * 1992-04-06 1993-10-26 Motorola, Inc. Method of forming a light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101286210B1 (ko) * 2012-03-12 2013-07-15 고려대학교 산학협력단 발광 소자 및 그 제조 방법

Also Published As

Publication number Publication date
US5474954A (en) 1995-12-12
JP3501520B2 (ja) 2004-03-02
JPH07273404A (ja) 1995-10-20

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