KR970008591A - 반도체 집적회로장치 및 그 제조방법 - Google Patents

반도체 집적회로장치 및 그 제조방법 Download PDF

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Publication number
KR970008591A
KR970008591A KR1019960026681A KR19960026681A KR970008591A KR 970008591 A KR970008591 A KR 970008591A KR 1019960026681 A KR1019960026681 A KR 1019960026681A KR 19960026681 A KR19960026681 A KR 19960026681A KR 970008591 A KR970008591 A KR 970008591A
Authority
KR
South Korea
Prior art keywords
ferroelectric
film
flip
ferroelectric capacitor
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960026681A
Other languages
English (en)
Korean (ko)
Inventor
마코토 오가사와라
가즈시게 사토
이사무 아사노
히사오 아사쿠라
Original Assignee
가나이 츠토무
히다치세사쿠쇼 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 츠토무, 히다치세사쿠쇼 가부시키가이샤 filed Critical 가나이 츠토무
Publication of KR970008591A publication Critical patent/KR970008591A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019960026681A 1995-07-03 1996-07-02 반도체 집적회로장치 및 그 제조방법 Withdrawn KR970008591A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-167338 1995-07-03
JP7167338A JPH0917965A (ja) 1995-07-03 1995-07-03 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR970008591A true KR970008591A (ko) 1997-02-24

Family

ID=15847890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960026681A Withdrawn KR970008591A (ko) 1995-07-03 1996-07-02 반도체 집적회로장치 및 그 제조방법

Country Status (3)

Country Link
JP (1) JPH0917965A (enExample)
KR (1) KR970008591A (enExample)
TW (1) TW307870B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치
JP2002269969A (ja) * 2001-03-07 2002-09-20 Nec Corp メモリセル、不揮発性メモリ装置、及びその制御方法
JP4688343B2 (ja) * 2001-05-16 2011-05-25 ルネサスエレクトロニクス株式会社 強誘電体メモリ装置
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
JP2004253730A (ja) 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2005092922A (ja) 2003-09-12 2005-04-07 Fujitsu Ltd 強誘電体メモリ
JP4570352B2 (ja) 2003-12-16 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
TW307870B (enExample) 1997-06-11
JPH0917965A (ja) 1997-01-17

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19960702

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid