TW307870B - - Google Patents
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- Publication number
- TW307870B TW307870B TW085100098A TW85100098A TW307870B TW 307870 B TW307870 B TW 307870B TW 085100098 A TW085100098 A TW 085100098A TW 85100098 A TW85100098 A TW 85100098A TW 307870 B TW307870 B TW 307870B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- ferroelectric
- misfet
- electrode
- ferroelectric capacitor
- Prior art date
Links
- 230000015654 memory Effects 0.000 claims description 172
- 239000003990 capacitor Substances 0.000 claims description 161
- 239000004065 semiconductor Substances 0.000 claims description 142
- 239000000758 substrate Substances 0.000 claims description 62
- 230000005540 biological transmission Effects 0.000 claims description 48
- 238000011049 filling Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 230000010287 polarization Effects 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 230000006386 memory function Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims 2
- 239000004570 mortar (masonry) Substances 0.000 claims 2
- 210000003625 skull Anatomy 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000012491 analyte Substances 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 329
- 239000010410 layer Substances 0.000 description 118
- 239000000463 material Substances 0.000 description 36
- 230000004888 barrier function Effects 0.000 description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 239000011229 interlayer Substances 0.000 description 29
- 229920002120 photoresistant polymer Polymers 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 108091006146 Channels Proteins 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RZDQHXVLPYMFLM-UHFFFAOYSA-N gold tantalum Chemical compound [Ta].[Ta].[Ta].[Au] RZDQHXVLPYMFLM-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 BF2 ions Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 206010029412 Nightmare Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7167338A JPH0917965A (ja) | 1995-07-03 | 1995-07-03 | 半導体集積回路装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW307870B true TW307870B (enExample) | 1997-06-11 |
Family
ID=15847890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085100098A TW307870B (enExample) | 1995-07-03 | 1996-01-05 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0917965A (enExample) |
| KR (1) | KR970008591A (enExample) |
| TW (1) | TW307870B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067864B2 (en) | 2001-01-30 | 2006-06-27 | Renesas Technology Corp. | SRAM having an improved capacitor |
| JP2002269969A (ja) * | 2001-03-07 | 2002-09-20 | Nec Corp | メモリセル、不揮発性メモリ装置、及びその制御方法 |
| JP4688343B2 (ja) * | 2001-05-16 | 2011-05-25 | ルネサスエレクトロニクス株式会社 | 強誘電体メモリ装置 |
| JP2003078037A (ja) * | 2001-09-04 | 2003-03-14 | Nec Corp | 半導体メモリ装置 |
| JP2004253730A (ja) | 2003-02-21 | 2004-09-09 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| JP2005092922A (ja) | 2003-09-12 | 2005-04-07 | Fujitsu Ltd | 強誘電体メモリ |
| JP4570352B2 (ja) | 2003-12-16 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
-
1995
- 1995-07-03 JP JP7167338A patent/JPH0917965A/ja active Pending
-
1996
- 1996-01-05 TW TW085100098A patent/TW307870B/zh active
- 1996-07-02 KR KR1019960026681A patent/KR970008591A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR970008591A (ko) | 1997-02-24 |
| JPH0917965A (ja) | 1997-01-17 |
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