JPH0917965A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JPH0917965A
JPH0917965A JP7167338A JP16733895A JPH0917965A JP H0917965 A JPH0917965 A JP H0917965A JP 7167338 A JP7167338 A JP 7167338A JP 16733895 A JP16733895 A JP 16733895A JP H0917965 A JPH0917965 A JP H0917965A
Authority
JP
Japan
Prior art keywords
film
ferroelectric
flip
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7167338A
Other languages
English (en)
Japanese (ja)
Inventor
Makoto Ogasawara
誠 小笠原
Kazue Sato
和重 佐藤
Isamu Asano
勇 浅野
Hisao Asakura
久雄 朝倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7167338A priority Critical patent/JPH0917965A/ja
Priority to TW085100098A priority patent/TW307870B/zh
Priority to KR1019960026681A priority patent/KR970008591A/ko
Publication of JPH0917965A publication Critical patent/JPH0917965A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Static Random-Access Memory (AREA)
JP7167338A 1995-07-03 1995-07-03 半導体集積回路装置およびその製造方法 Pending JPH0917965A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7167338A JPH0917965A (ja) 1995-07-03 1995-07-03 半導体集積回路装置およびその製造方法
TW085100098A TW307870B (enExample) 1995-07-03 1996-01-05
KR1019960026681A KR970008591A (ko) 1995-07-03 1996-07-02 반도체 집적회로장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7167338A JPH0917965A (ja) 1995-07-03 1995-07-03 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPH0917965A true JPH0917965A (ja) 1997-01-17

Family

ID=15847890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7167338A Pending JPH0917965A (ja) 1995-07-03 1995-07-03 半導体集積回路装置およびその製造方法

Country Status (3)

Country Link
JP (1) JPH0917965A (enExample)
KR (1) KR970008591A (enExample)
TW (1) TW307870B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061840A1 (en) * 2001-01-30 2002-08-08 Hitachi, Ltd. Semiconductor integrated circuit device and production method therefor
JP2002269969A (ja) * 2001-03-07 2002-09-20 Nec Corp メモリセル、不揮発性メモリ装置、及びその制御方法
JP2002343942A (ja) * 2001-05-16 2002-11-29 Nec Corp 半導体メモリ装置及びその製造方法
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
US6924999B2 (en) 2003-09-12 2005-08-02 Fujitsu Limited Ferroelectric memory
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7411256B2 (en) 2003-12-16 2008-08-12 Nec Electronics Corporation Semiconductor integrated circuit device capacitive node interconnect

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067864B2 (en) 2001-01-30 2006-06-27 Renesas Technology Corp. SRAM having an improved capacitor
US7893505B2 (en) 2001-01-30 2011-02-22 Renesas Electronics Corporation Semiconductor integrated circuit device
US7488639B2 (en) 2001-01-30 2009-02-10 Renesas Technology Corp. Method of manufacturing a semiconductor integrated circuit device
WO2002061840A1 (en) * 2001-01-30 2002-08-08 Hitachi, Ltd. Semiconductor integrated circuit device and production method therefor
CN100394605C (zh) * 2001-01-30 2008-06-11 株式会社日立制作所 半导体集成电路器件及其制造方法
EP1239492A3 (en) * 2001-03-07 2003-01-15 Nec Corporation Memory cell, nonvolatile memory device and control method therefor, improving reliability at low power supply voltage
US6646909B2 (en) 2001-03-07 2003-11-11 Nec Electronics Corporation Memory cell, nonvolatile memory device and control method therefor improving reliability under low power supply voltage
JP2002269969A (ja) * 2001-03-07 2002-09-20 Nec Corp メモリセル、不揮発性メモリ装置、及びその制御方法
JP2002343942A (ja) * 2001-05-16 2002-11-29 Nec Corp 半導体メモリ装置及びその製造方法
JP2003078037A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体メモリ装置
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US6924999B2 (en) 2003-09-12 2005-08-02 Fujitsu Limited Ferroelectric memory
US7411256B2 (en) 2003-12-16 2008-08-12 Nec Electronics Corporation Semiconductor integrated circuit device capacitive node interconnect

Also Published As

Publication number Publication date
KR970008591A (ko) 1997-02-24
TW307870B (enExample) 1997-06-11

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