KR970002339A - 소오스 측에 부하를 가진 파워 반도체 소자의 부하 전류 검출 회로 - Google Patents

소오스 측에 부하를 가진 파워 반도체 소자의 부하 전류 검출 회로 Download PDF

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Publication number
KR970002339A
KR970002339A KR1019960019929A KR19960019929A KR970002339A KR 970002339 A KR970002339 A KR 970002339A KR 1019960019929 A KR1019960019929 A KR 1019960019929A KR 19960019929 A KR19960019929 A KR 19960019929A KR 970002339 A KR970002339 A KR 970002339A
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KR
South Korea
Prior art keywords
load current
power semiconductor
semiconductor device
detection circuit
current detection
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Application number
KR1019960019929A
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English (en)
Inventor
예뇌 티하니
아담-이스트반 코론카이
Original Assignee
알베르트 발도르프 · 롤프 옴케
지멘스 악티엔게젤샤프트
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Application filed by 알베르트 발도르프 · 롤프 옴케, 지멘스 악티엔게젤샤프트 filed Critical 알베르트 발도르프 · 롤프 옴케
Publication of KR970002339A publication Critical patent/KR970002339A/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Control Of Voltage And Current In General (AREA)

Abstract

"Sense"-FET의 공지된 원리를 기초로, 측정 출력과, 접지에 접속된 측정 저항(5) 사이에 제어가능한 저항(6)이 접속된다. 그것의 저항값은 항상 파워 FET(1)와 "Sense"-FET(2)의 드레인 소오스 전압이 동일하도록 조절된다. 따라서, 측정 전류가 부하의 크기와 무관하게 부하 전류에 비례하게 된다.

Description

소오스 측에 부하를 가진 파워 반도체 소자의 부하 전류 검출 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 회로의 기본 구성을 나타낸 회로도, 제2도는 확장된 회로의 회로도.

Claims (7)

  1. -전계 효과에 의해 제어가능한 또 다른 반도체소자가 제공되며, -두 반도체소자의 드레인 단자 및 게이트 단자가 서로 접속되고 -부하 전류의 일부가 또 다른 반도체소자를 통해 흐르며, -또 다른 반도체소자에 저항이 직렬 접속되고, 이 저항에서 부하전류에 비례하는 전압이 탭되도록 구성된, 전계 효과에 의해 제어가능한 파워 반도체 소자의 부하전류를 검출하기 위한 회로에 있어서, 저항(5)이 한편으로는 고정 전위에 접속된 단자에 접속되며 다른 한편으로는 제어가능한 저항(6)을 통해 또 다른 반도체소자인(2)의 소오스 단자에 접속되고, 또 다른 반도체 소자의 전류는 제어가능한 저하에 의해, 두 반도체소자의 드레인 소오스 전압이 서로 동일해지도록, 조절되는 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  2. 제1항에 있어서, 제어가능한 저항(6)이 MOSFET이고, 그것의 제어 입력이 차동 증폭기의 출력에 접속되고, 상기 차동 증폭기의 제1입력은 파워 반도체 소자(1)의 소오스 단자에 접속되며 그것의 제2입력은 또 다른 반도체 소자(2)의 소오스 단자에 접속되는 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  3. 제2항에 있어서, 차동 증폭기(3)가 연산 증폭기인 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  4. 제1항에 있어서, 고정 전위가 접지 전위인 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, 반도체 소자(1,2)가 서로 유사한 ID/UDS특성 곡선을 갖는 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 파워 반도체 소자(1) 및 또 다른 반도체 소자(2)가 단일 칩상에 집적된 다수의 셀로 이루어지는 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 파워 반도체 소자(1)의 드레인 단자는 또 다른 차동 증폭기(14)의 제1입력에 접속되고, 상기 차동 증폭기(14)의 제2입력에는 제1차동 증폭기(3)의 오프셋 전압 보다 큰 전압이 인가되는 것을 특징으로 하는 파워 반도체 소자의 부하 전류 검출회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960019929A 1995-06-07 1996-06-05 소오스 측에 부하를 가진 파워 반도체 소자의 부하 전류 검출 회로 KR970002339A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19520735.1 1995-06-07
DE19520735A DE19520735C2 (de) 1995-06-07 1995-06-07 Schaltungsanordnung zum Erfassen des Laststroms eines Leistungs-Halbleiterbauelementes mit sourceseitiger Last

Publications (1)

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KR970002339A true KR970002339A (ko) 1997-01-24

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Country Link
US (1) US5815027A (ko)
EP (1) EP0747713B1 (ko)
JP (1) JPH08334534A (ko)
KR (1) KR970002339A (ko)
DE (2) DE19520735C2 (ko)

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Also Published As

Publication number Publication date
DE19520735A1 (de) 1996-12-12
EP0747713B1 (de) 2006-07-12
DE59611364D1 (de) 2006-08-24
DE19520735C2 (de) 1999-07-01
EP0747713A2 (de) 1996-12-11
EP0747713A3 (de) 1998-01-07
US5815027A (en) 1998-09-29
JPH08334534A (ja) 1996-12-17

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