KR960039602A - 고주파전력 증폭회로장치 - Google Patents

고주파전력 증폭회로장치 Download PDF

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KR960039602A
KR960039602A KR1019960010150A KR19960010150A KR960039602A KR 960039602 A KR960039602 A KR 960039602A KR 1019960010150 A KR1019960010150 A KR 1019960010150A KR 19960010150 A KR19960010150 A KR 19960010150A KR 960039602 A KR960039602 A KR 960039602A
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frequency power
circuit
semiconductor chip
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circuit device
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노리유키 요시카와
가즈키 다테오카
아키히사 스기무라
구니히코 가나자와
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스기야마 가즈히코
마쯔시다 덴시 고교 가부시키가이샤
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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Abstract

복수의 세라믹기판을 적층하여 적충제를 형성하고, 맨 위 제1세라믹 기판상에 FET 등을 가지는 반도체 칩을 탑재하며, 고주파 정합회로를 형성한다. 제2세라믹 기판상 즉, 중간층에 접지층을 형성하고, 상하 각 층에 배치되는 회로요소 사이의 전기신호 간섭을 방지한다. 제3세라믹 기판 상면상에 바이어스회로를, 하면상에 이면 접지전극을 각각 형성한다. 또 각 세라믹 기판 측면상과 맨 아래 제3세라믹 기판 하면상에 걸쳐서 리드레스 전극을 형성한다. 질화알루미늄 기판의 높은 열전도율과 적당한 유전율 및 입체적 구조를 이용하여 장치 전체를 소형화하고 단가를 삭감한다.

Description

고주파전력 증폭회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1 (a), (b)도는 각각 제1실시예에 관한 고주파전력 증폭회로장치의 구성을 나타내는 사시도 및 제3층의 이면패턴을 나타내는 평면도.

Claims (14)

  1. 고주파 신호를 증폭하기 위한 제1능동소자와 복수의 수동소자를 포함하는 복수의 회로요소를 구비한 고주파전력 증폭회로장치로서, 열전도율이 높은 유전재료로 이루어지는 복수의 기판을 적층하여 구성되고, 상기 복수의 기판 중 맨 위 기판 상면상의 영역인 최상층과, 각 기판 사이의 영역인 적어도 하나의 중간층과, 상기 복수의 기판 중 맨 아래기판 하면상의 영역인 최하층과, 상기 각 기판 측면상의 영역인 측방측에 상기 회로요소가 분산하여 배치 가능하게 구성된 적층제와, 상기 맨 위 기판 상면상에 탑재되고 상기 제1능동소자를 가지는 제1반도체 칩을 구비하여, 상기 제1능동소자 이외의 희로요소는 상기 적충제의 각 층으로 분산하여 배치되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  2. 제1항에 있어서, 상기 적층제의 맨 위 기판상에 탑재되고 제2능동소자를 가지며 상기 제1반도체 칩과는 종류가 다른 반도체로 구성되는 제2반도체 칩을 더 구비하고 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  3. 제1항에 있어서, 상기 적층제의 최상층 상에 탑재되고, 제3능동소자를 가지며 실리콘으로 구성되는 제3반도체 칩을 더 구비하고, 상기 제1반도체 칩은 화합물 반도체로 구성되어 있고, 상기 제 3반도체 칩에는 상기 회로요소의 하나인 수동소자가 배열 설치되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  4. 제1항에 있어서, 상기 제1반도체 칩은 화합물 반도체로 구성되어 있고, 상기 회로요소에는 인덕터 또는 분포정수회로 구성되는 스터브가 포함되어 있으며, 상기 제1반도체 칩 상에는 제1반도체 칩 상에서의 고주파신호 파장의 1/8 이상의 길이를 가지는 인덕터 또는 분포정수회로로 구성되는 스터브가 배열 설치되어 있지않는 것을 특징으로 하는 고주파전력 증폭회로장치
  5. 제1항에 있어서, 상기 회로요소에는 상기 적층체의 적어도 최상층 내에 형성된 고주파 임피던스 정합회로가 포함되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  6. 제1항에 있어서, 상기 적층체의 적어도 상기 측방층 내에 형성되고, 각 회로요소와 외부회로 사이를 접속하기 위한 리드레스전극을 더 구비하고 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  7. 제1항에 있어서, 상기 회로요소에는 상기 최상층, 중간층 및 최하층 중 적어도 하나의 층을 사이를 둔2개의 층 내에 각각 형성된 2개의 회로요소와, 이 2개의 회로요소가 형성된 상기 2개의 층 사이의 층 내에 형성된 접지층이 포함되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  8. 제1항에 있어서, 상기 제1반도체칩은 상기 제1능동소자가 배열 설치된 면을 상기 맨 위 기판을 향한 상태로 플립칩 방식에 의하여 상기 맨 위 기판상에 탑재되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  9. 제1항에 있어서, 상기 회로요소에는 상기 적층체의 상기 최상층 및 각 중간층 중 적어도 어느 하나의 층 내에 형성된 적어도 2개의 부재로 구성되는 필터회로가 포함되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  10. 제1항에 있어서, 상기 적층체의 상기 최하층내에 형성되고 땜납 도금된 이면 접지전극을 더 구비하고 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  11. 제1항에 있어서, 상기 회로요소에는 상기 적층체의 최상층 혹은 중간층 내에 형성된 바이어스 회로가 포함되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  12. 제1항에 있어서, 상기 복수의 기판 중 적어도 하나의 기판을 질화알루미늄으로 구성되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  13. 제1항에 있어서, 상기 복수의 기판 중 적어도 하나의 기판은 산화알루미늄 또는 질화실리콘으로 구성되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
  14. 제1항에 있어서. 상기 복수의 기판 중 적어도 어느 2개의 기판은 유전율이 상이한 재료로 구성되어 있는 것을 특징으로 하는 고주파전력 증폭회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960010150A 1995-04-05 1996-04-04 고주파전력 증폭회로장치 KR100197187B1 (ko)

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JP95-080,154 1995-04-05
JP95-080154 1995-04-05
JP8015495 1995-04-05

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KR100197187B1 KR100197187B1 (ko) 1999-06-15

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454544B1 (ko) * 2002-05-24 2004-11-03 미쓰비시덴키 가부시키가이샤 고주파 회로 및 그 제조 방법
KR100527223B1 (ko) * 1998-04-10 2005-11-08 다이요 유덴 가부시키가이샤 고주파 전력 증폭 회로 및 고주파 전력 증폭 모듈

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US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
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