KR960039208A - 반도체 소자의 게이트산화막 형성방법 - Google Patents

반도체 소자의 게이트산화막 형성방법 Download PDF

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KR960039208A
KR960039208A KR1019950007842A KR19950007842A KR960039208A KR 960039208 A KR960039208 A KR 960039208A KR 1019950007842 A KR1019950007842 A KR 1019950007842A KR 19950007842 A KR19950007842 A KR 19950007842A KR 960039208 A KR960039208 A KR 960039208A
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South Korea
Prior art keywords
oxide film
gas atmosphere
oxidation process
semiconductor device
temperature
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KR1019950007842A
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English (en)
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KR100305204B1 (ko
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이석희
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김주용
현대전자산업 주식회사
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Priority to KR1019950007842A priority Critical patent/KR100305204B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 게이트산화막 형성방법에 관한 것으로, 산화막의 균일도 향상시키기 위하여 N2O 및 NH3가스분위기하에서 제1산화공정을 실시한 후 N2O가스분위기하에서 제2산화공정을 실시하므로써 게이트 산호막의 균일도를 향상시키며 산화막과 실리콘의 계면에 질소원자가 분포하는 질화산화막을 형성하여 내압특성 및 신뢰도를 향상시킬 수 있도록 한 반도체 소자의 게이트산화막 형성방법에 관한 것이다.

Description

반도체 소자의 게이트산화막 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 반도체 소자의 게이트산화막 형성방법 설명하기 위한 개념도, 제4도는 제3도를 설명하기 위한 단면도.

Claims (5)

  1. 반도체 소자의 게이트산화막 형성방법에 있어서, 세정이 완료된 실리콘기판을 반응로내부로 보트-인시킨후 온도를 상승시키기 위한 램프-업공정을 실시하는 단계와, 상기 단계로부터 상승된 온도, N2O 및 NH3가스 분위기하에서 소정 시간동안 제1산화공정을 실시하는 단계와, 상기 단계로부터 N2O가스분위기하에서 소정시간동안 제2산화공정을 실시하는 단계와, 상기 단계료부터 N2가스분위기하에서 열처리공정을 실시한 후 상기반응로 내의 온도를 하강시키기 위한 램프-다운공정을 실시하고 상기 실리콘기판을 반응로 외부로 보트-이웃시키는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.
  2. 제1항에 있어서, 상기 보트-인 및 보트-아웃시 반응로의 온도는 600 내지 700℃이며, N2가스분위기인 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.
  3. 제1항에 있어서, 상기 램프-업공정시 반응로의 온도는 850 내지 950℃로 상승되는 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.
  4. 제1항에 있어서, 상기 제1산화공정은 5 내지 15분간 실시되며, 상기 제2산화공정은 30 내지 100분동안 실시되는 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.
  5. 제1 또는 제4항에 있어서, 상기 제2산화공정은 N2O가스 대신 O2가스분위기하에서 실시되는 것을 특징으로 하는 반도체 소자의 게이트산화막 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950007842A 1995-04-04 1995-04-04 반도체소자의게이트산화막형성방법 KR100305204B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950007842A KR100305204B1 (ko) 1995-04-04 1995-04-04 반도체소자의게이트산화막형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950007842A KR100305204B1 (ko) 1995-04-04 1995-04-04 반도체소자의게이트산화막형성방법

Publications (2)

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KR960039208A true KR960039208A (ko) 1996-11-21
KR100305204B1 KR100305204B1 (ko) 2001-11-30

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KR1019950007842A KR100305204B1 (ko) 1995-04-04 1995-04-04 반도체소자의게이트산화막형성방법

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