KR960039134A - 금속 표면의 개질방법 및 이에 의해 표면개질된 금속 - Google Patents

금속 표면의 개질방법 및 이에 의해 표면개질된 금속 Download PDF

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KR960039134A
KR960039134A KR1019960011995A KR19960011995A KR960039134A KR 960039134 A KR960039134 A KR 960039134A KR 1019960011995 A KR1019960011995 A KR 1019960011995A KR 19960011995 A KR19960011995 A KR 19960011995A KR 960039134 A KR960039134 A KR 960039134A
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energy
metal surface
vacuum
metal
reactive gas
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KR1019960011995A
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KR100324619B1 (ko
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고석근
정형진
최원국
강병하
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박원훈
한국과학기술연구원
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Priority to US08/806,675 priority Critical patent/US6162513A/en
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Publication of KR100324619B1 publication Critical patent/KR100324619B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0027—Ion-implantation, ion-irradiation or ion-injection
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/20—Carburising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06P—DYEING OR PRINTING TEXTILES; DYEING LEATHER, FURS OR SOLID MACROMOLECULAR SUBSTANCES IN ANY FORM
    • D06P5/00—Other features in dyeing or printing textiles, or dyeing leather, furs, or solid macromolecular substances in any form
    • D06P5/20—Physical treatments affecting dyeing, e.g. ultrasonic or electric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
    • B29C2035/0872—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
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  • Structural Engineering (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Textile Engineering (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

본 발명은 진공 상태하에, 반응성 가스를 고분자 또는 금속 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자 또는 금속 표면에 조사하여 그 표면의 접촉각을 감소기켜 고분자 또는 금속 표면을 개질하는 방법에 관한 것이다.

Description

금속 표면의 개질방법 및 이에 의해 표면개질된 금속
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 고분자 표면의 개질방법에 이용하는 표면 처리 장치의 개략도, 제19도는 본 발명의 방법에서 이용될 수 있는 장치에서의 전원장치 구성도와 종래 표면 개질 방법에 사용되는 장치에서의 전원장치 구성도.

Claims (9)

  1. 진공 상태하에, 반응성 가스를 금속 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 금속 표면에 조사하는 것으로 이루어지는 금속 표면의 개질방법.
  2. 제1항에 있어서, 상기 반응성 가스가 산소, 질소, 수소, 암모니아, 일산화탄소 및 이들의 혼합가스 중에서 선택되는 개질방법.
  3. 제1항에 있어서, 상기 반응성 가스의 주입량 1-8ml/min인 개질방법.
  4. 제1항에 있어서, 상기 금속이 알루미늄인 개질방법.
  5. 제1항에 있어서, 상기 에너지를 가진 이온 입자가 아르곤, 산소, 공기, 크립톤 및 이들의 혼합물 중에서 선택되는 개질방법.
  6. 제1항에 있어서, 상기 에너지를 가진 이온 입자의 에너지가 0.5-2.5KeV인 개질방법.
  7. 제1항에 있어서, 상기 에너지를 가진 이온 입자의 조사량이 1014- 5 × 1017ions/㎠인 개질방법.
  8. 제1항에 있어서, 상기 에너지를 가진 이온 입자를 금속 표면에 조사할 때, 진공도에 따라 그 조사 거리가 5 × 10-3-1×10-6torr의 고진공에서는 25-55㎝이고, 10-6torr 이상의 초고진공에서는 55㎝이상이며, 5×10-3torr 이하의 저진공에서는 25㎝이하인 개질방법.
  9. 제1항의 방법에 의해, 금속 표면의 물과의 접촉각이 감소되거나 접착력이 증대된 금속 재료.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960011995A 1995-04-19 1996-04-19 금속 표면의 개질방법 및 이에 의해 표면개질된금속 KR100324619B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/806,675 US6162513A (en) 1996-04-19 1997-02-26 Method for modifying metal surface

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR1019950009194 1995-04-19
KR19950009194 1995-04-19
KR101995009194 1995-04-19
KR1019950017514 1995-06-26
KR19950017514 1995-06-26
KR101996002456 1996-02-01
KR1019960002456 1996-02-01
KR19960002456 1996-02-01

Publications (2)

Publication Number Publication Date
KR960039134A true KR960039134A (ko) 1996-11-21
KR100324619B1 KR100324619B1 (ko) 2002-10-12

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1019960011996A KR100288500B1 (ko) 1995-04-19 1996-04-19 질화물 표면의 개질방법 및 이에 의해 표면개질된질화물
KR1019960011994A KR100316586B1 (ko) 1995-04-19 1996-04-19 재료표면의개질방법및이에의해표면개질된재료
KR1019960011995A KR100324619B1 (ko) 1995-04-19 1996-04-19 금속 표면의 개질방법 및 이에 의해 표면개질된금속

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Application Number Title Priority Date Filing Date
KR1019960011996A KR100288500B1 (ko) 1995-04-19 1996-04-19 질화물 표면의 개질방법 및 이에 의해 표면개질된질화물
KR1019960011994A KR100316586B1 (ko) 1995-04-19 1996-04-19 재료표면의개질방법및이에의해표면개질된재료

Country Status (10)

Country Link
US (1) US5783641A (ko)
EP (1) EP0822995B1 (ko)
JP (1) JP3213005B2 (ko)
KR (3) KR100288500B1 (ko)
CN (1) CN1107124C (ko)
AU (1) AU4956996A (ko)
BR (1) BR9608228A (ko)
DE (1) DE69617221T2 (ko)
ES (1) ES2164873T3 (ko)
WO (1) WO1996033293A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100758890B1 (ko) * 2005-12-28 2007-09-19 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법 및 자기 헤드의 제조 방법

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965629A (en) 1996-04-19 1999-10-12 Korea Institute Of Science And Technology Process for modifying surfaces of materials, and materials having surfaces modified thereby
JP3124508B2 (ja) * 1996-04-19 2001-01-15 韓国科学技術研究院 窒化物表面の改質方法及びその方法により表面改質された窒化物
KR19990040319A (ko) * 1997-11-17 1999-06-05 성재갑 고분자 표면의 이온 입자 조사에 의한 미세 기공 막의 제조
US20030066746A1 (en) * 1997-12-04 2003-04-10 Korea Institute Of Science And Technology Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
KR19990047370A (ko) * 1997-12-04 1999-07-05 구자홍 표면의 친수성 또는 소수성이 향상된 냉동, 공조용 금속재료 및 그 향상 방법
KR19990047679A (ko) * 1997-12-05 1999-07-05 박호군 이온 빔을 이용한 재료의 표면 처리 장치
KR100383091B1 (ko) * 1999-04-10 2003-05-12 주식회사 엘지화학 고분자 표면 개질 방법
CN1150961C (zh) * 1998-12-02 2004-05-26 Lg化学株式会社 改性聚合物薄膜表面的方法
KR100371398B1 (ko) * 1998-12-08 2003-05-12 주식회사 엘지화학 폴리올레핀블렌드로제조된통기성필름과그의제조방법및2차전지의격리막
KR100345289B1 (ko) * 1999-09-16 2002-07-25 한국과학기술연구원 수소 이온보조 반응법을 이용한 고분자 표면처리 방법
KR100336621B1 (ko) * 2000-02-15 2002-05-16 박호군 고분자 기판 위의 인듐산화물 또는 인듐주석산화물 박막증착 방법
KR100347971B1 (ko) * 2000-03-06 2002-08-09 한국전력공사 낮은 에너지 이온빔조사에 의한 폴리머 표면의 전기 전도성 및 기계적 물성향상 장치
KR20010088089A (ko) * 2000-03-10 2001-09-26 구자홍 플라즈마 중합처리 시스템의 친수성 향상 방법
JP4041945B2 (ja) 2000-05-22 2008-02-06 セイコーエプソン株式会社 ヘッド部材及び撥インク処理方法並びに処理装置
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US5783641A (en) 1998-07-21
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WO1996033293A1 (en) 1996-10-24
AU4956996A (en) 1996-11-07
CN1107124C (zh) 2003-04-30
KR100324619B1 (ko) 2002-10-12
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