KR960039135A - 질화물 표면의 개질방법 및 이에 의해 표면개질된 질화물 - Google Patents
질화물 표면의 개질방법 및 이에 의해 표면개질된 질화물 Download PDFInfo
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- KR960039135A KR960039135A KR1019960011996A KR19960011996A KR960039135A KR 960039135 A KR960039135 A KR 960039135A KR 1019960011996 A KR1019960011996 A KR 1019960011996A KR 19960011996 A KR19960011996 A KR 19960011996A KR 960039135 A KR960039135 A KR 960039135A
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- Prior art keywords
- nitride
- energy
- reactive gas
- modifying
- copper
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 title claims abstract 12
- 239000002245 particle Substances 0.000 claims abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052802 copper Inorganic materials 0.000 claims abstract 4
- 239000010949 copper Substances 0.000 claims abstract 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract 2
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000002407 reforming Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 239000003570 air Substances 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000007664 blowing Methods 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000002715 modification method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0027—Ion-implantation, ion-irradiation or ion-injection
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/20—Carburising
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/24—Nitriding
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- D06P5/00—Other features in dyeing or printing textiles, or dyeing leather, furs, or solid macromolecular substances in any form
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
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Abstract
본 발명은 진공 상태하에, 반응성 가스를 고분자 또는 질화물 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자 또는 질화물 표면에 조사하여 그 표면의 접촉각을 감소시켜 고분자 또는 질화물 표면을 개질하는 방법 및 상기 방법에 의해 얻어진 질화물에 구리 박막을 성막시켜 얻어지는 구리 직접결합 질화알루미늄 재료에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 고분자 표면의 개질방법에 이용하는 표면처리 장치의 개략도, 제19도는 본 발명의 방법에서 이용될 수 있는 장치에서의 전원장치 구성도와 종래 표면 개질 방법에 사용되는 장치에서의 전원장치 구성도.
Claims (8)
- 진공 상태하에, 반응성 가스를 질화물 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 질화물 표면에 조사하는 것으로, 이루어지는 질화물 표면의 개질방법.
- 제1항에 있어서, 상기 반응성 가스가 산소, 질소, 수소, 암모니아, 일산화탄소 및 이들의 혼합가스 중에서 선택되는 개질방법.
- 제1항에 있어서, 상기 반응성 가스의 주입량이 1-8ml/min인 개질방법.
- 제1항에 있어서, 상기 질화물이 질화알루미늄인 개질방법.
- 제1항에 있어서, 상기 에너지를 가진 이온 입자가 아르곤, 산소, 공기, 크립톤 및 이들의 혼합물 중에서 선택되는 개질방법.
- 제1항에 있어서, 상기 에너지를 가진 이온 입자의 에너지가 0.5-2.5KeV인 개질방법.
- 제1항에 있어서, 상기 에너지를 가진 이온 입자의 조사량이 10(14)- 5 × 10(16)ions/㎠
- 제1항의 방법에 의해 얻어진 질화물 표면에 구리 박막을 성막시켜 얻어지는 구리 직접결합 질화물 재료.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/839,373 US6162512A (en) | 1996-04-19 | 1997-04-18 | Process for modifying surfaces of nitride, and nitride having surfaces modified thereby |
JP09102028A JP3124508B2 (ja) | 1996-04-19 | 1997-04-18 | 窒化物表面の改質方法及びその方法により表面改質された窒化物 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19950009194 | 1995-04-19 | ||
KR1019950009194 | 1995-04-19 | ||
KR1019950091914 | 1995-04-19 | ||
KR1019950017514 | 1995-06-26 | ||
KR19950017514 | 1995-06-26 | ||
KR1019960002456 | 1996-02-01 | ||
KR101996002456 | 1996-02-01 | ||
KR19960002456 | 1996-02-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960039135A true KR960039135A (ko) | 1996-11-21 |
KR100288500B1 KR100288500B1 (ko) | 2001-05-02 |
Family
ID=27349166
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960011995A KR100324619B1 (ko) | 1995-04-19 | 1996-04-19 | 금속 표면의 개질방법 및 이에 의해 표면개질된금속 |
KR1019960011996A KR100288500B1 (ko) | 1995-04-19 | 1996-04-19 | 질화물 표면의 개질방법 및 이에 의해 표면개질된질화물 |
KR1019960011994A KR100316586B1 (ko) | 1995-04-19 | 1996-04-19 | 재료표면의개질방법및이에의해표면개질된재료 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960011995A KR100324619B1 (ko) | 1995-04-19 | 1996-04-19 | 금속 표면의 개질방법 및 이에 의해 표면개질된금속 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960011994A KR100316586B1 (ko) | 1995-04-19 | 1996-04-19 | 재료표면의개질방법및이에의해표면개질된재료 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5783641A (ko) |
EP (1) | EP0822995B1 (ko) |
JP (1) | JP3213005B2 (ko) |
KR (3) | KR100324619B1 (ko) |
CN (1) | CN1107124C (ko) |
AU (1) | AU4956996A (ko) |
BR (1) | BR9608228A (ko) |
DE (1) | DE69617221T2 (ko) |
ES (1) | ES2164873T3 (ko) |
WO (1) | WO1996033293A1 (ko) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5965629A (en) | 1996-04-19 | 1999-10-12 | Korea Institute Of Science And Technology | Process for modifying surfaces of materials, and materials having surfaces modified thereby |
US6162512A (en) * | 1996-04-19 | 2000-12-19 | Korea Institute Of Science And Technology | Process for modifying surfaces of nitride, and nitride having surfaces modified thereby |
KR19990040319A (ko) * | 1997-11-17 | 1999-06-05 | 성재갑 | 고분자 표면의 이온 입자 조사에 의한 미세 기공 막의 제조 |
KR19990047370A (ko) * | 1997-12-04 | 1999-07-05 | 구자홍 | 표면의 친수성 또는 소수성이 향상된 냉동, 공조용 금속재료 및 그 향상 방법 |
US20020189931A1 (en) * | 1997-12-04 | 2002-12-19 | Korea Institute Of Science And Technology | Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning |
KR19990047679A (ko) | 1997-12-05 | 1999-07-05 | 박호군 | 이온 빔을 이용한 재료의 표면 처리 장치 |
KR100383091B1 (ko) * | 1999-04-10 | 2003-05-12 | 주식회사 엘지화학 | 고분자 표면 개질 방법 |
DE69939253D1 (de) * | 1998-12-02 | 2008-09-18 | Lg Chemical Ltd | Verfahren zur veränderung von polymeroberflächen zur besseren benetzbarkeit |
KR100371398B1 (ko) * | 1998-12-08 | 2003-05-12 | 주식회사 엘지화학 | 폴리올레핀블렌드로제조된통기성필름과그의제조방법및2차전지의격리막 |
KR100345289B1 (ko) * | 1999-09-16 | 2002-07-25 | 한국과학기술연구원 | 수소 이온보조 반응법을 이용한 고분자 표면처리 방법 |
KR100336621B1 (ko) * | 2000-02-15 | 2002-05-16 | 박호군 | 고분자 기판 위의 인듐산화물 또는 인듐주석산화물 박막증착 방법 |
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US5223309A (en) * | 1991-07-10 | 1993-06-29 | Spire Corporation | Ion implantation of silicone rubber |
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JP3157943B2 (ja) * | 1993-03-01 | 2001-04-23 | 株式会社リコー | 基体表面の改質処理方法およびその改質処理装置 |
-
1996
- 1996-02-28 US US08/608,054 patent/US5783641A/en not_active Expired - Lifetime
- 1996-02-29 ES ES96906089T patent/ES2164873T3/es not_active Expired - Lifetime
- 1996-02-29 JP JP53163596A patent/JP3213005B2/ja not_active Expired - Lifetime
- 1996-02-29 WO PCT/KR1996/000032 patent/WO1996033293A1/en active IP Right Grant
- 1996-02-29 EP EP96906089A patent/EP0822995B1/en not_active Expired - Lifetime
- 1996-02-29 BR BR9608228A patent/BR9608228A/pt not_active IP Right Cessation
- 1996-02-29 AU AU49569/96A patent/AU4956996A/en not_active Abandoned
- 1996-02-29 DE DE69617221T patent/DE69617221T2/de not_active Expired - Lifetime
- 1996-02-29 CN CN96193367A patent/CN1107124C/zh not_active Expired - Lifetime
- 1996-04-19 KR KR1019960011995A patent/KR100324619B1/ko not_active IP Right Cessation
- 1996-04-19 KR KR1019960011996A patent/KR100288500B1/ko not_active IP Right Cessation
- 1996-04-19 KR KR1019960011994A patent/KR100316586B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1107124C (zh) | 2003-04-30 |
WO1996033293A1 (en) | 1996-10-24 |
KR100324619B1 (ko) | 2002-10-12 |
EP0822995A1 (en) | 1998-02-11 |
JP3213005B2 (ja) | 2001-09-25 |
US5783641A (en) | 1998-07-21 |
BR9608228A (pt) | 1998-12-29 |
AU4956996A (en) | 1996-11-07 |
EP0822995B1 (en) | 2001-11-21 |
CN1181787A (zh) | 1998-05-13 |
JPH11501696A (ja) | 1999-02-09 |
KR100288500B1 (ko) | 2001-05-02 |
KR960037742A (ko) | 1996-11-19 |
KR100316586B1 (ko) | 2002-02-28 |
KR960039134A (ko) | 1996-11-21 |
DE69617221T2 (de) | 2002-05-08 |
ES2164873T3 (es) | 2002-03-01 |
DE69617221D1 (de) | 2002-01-03 |
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