KR960036150A - - Google Patents

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Publication number
KR960036150A
KR960036150A KR19960008689A KR19960008689A KR960036150A KR 960036150 A KR960036150 A KR 960036150A KR 19960008689 A KR19960008689 A KR 19960008689A KR 19960008689 A KR19960008689 A KR 19960008689A KR 960036150 A KR960036150 A KR 960036150A
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KR
South Korea
Application number
KR19960008689A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960036150A publication Critical patent/KR960036150A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR19960008689A 1995-03-28 1996-03-28 KR960036150A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7096266A JPH08264802A (ja) 1995-03-28 1995-03-28 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ

Publications (1)

Publication Number Publication Date
KR960036150A true KR960036150A (ko) 1996-10-28

Family

ID=14160363

Family Applications (1)

Application Number Title Priority Date Filing Date
KR19960008689A KR960036150A (ko) 1995-03-28 1996-03-28

Country Status (3)

Country Link
US (3) US5767529A (ko)
JP (1) JPH08264802A (ko)
KR (1) KR960036150A (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1184418A (ja) * 1997-09-08 1999-03-26 Sanyo Electric Co Ltd 表示装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11214700A (ja) 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
JPH11338439A (ja) * 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
JP3844613B2 (ja) 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5030345B2 (ja) * 2000-09-29 2012-09-19 三洋電機株式会社 半導体装置
US6830965B1 (en) * 2000-10-25 2004-12-14 Sharp Laboratories Of America, Inc. Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
US6831299B2 (en) * 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100477103B1 (ko) * 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
US7417249B2 (en) * 2004-08-20 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum
CN101928983B (zh) * 2010-07-23 2012-04-04 武汉瀚博思科技有限公司 触媒法生产多晶硅和多晶硅薄膜的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222432A (ja) * 1988-03-01 1989-09-05 Matsushita Electron Corp 半導体装置の製造方法
JPH02224255A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 液晶表示装置
JPH05136168A (ja) * 1991-11-12 1993-06-01 Toshiba Corp 薄膜トランジスタの製造方法
JPH06260643A (ja) * 1993-03-05 1994-09-16 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ

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JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH02150017A (ja) 1988-11-30 1990-06-08 Ricoh Co Ltd 薄膜半導体
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JPH059089A (ja) * 1991-06-28 1993-01-19 Canon Inc 結晶の成長方法
US5670297A (en) 1991-12-30 1997-09-23 Sony Corporation Process for the formation of a metal pattern
US5420055A (en) * 1992-01-22 1995-05-30 Kopin Corporation Reduction of parasitic effects in floating body MOSFETs
GB9206086D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
JP3156878B2 (ja) 1992-04-30 2001-04-16 株式会社東芝 半導体装置およびその製造方法
JP2666103B2 (ja) * 1992-06-03 1997-10-22 カシオ計算機株式会社 薄膜半導体装置
US5807772A (en) * 1992-06-09 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device with bottom gate connected to source or drain
JP3254007B2 (ja) * 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
JPH06124962A (ja) 1992-10-09 1994-05-06 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JPH06123896A (ja) 1992-10-13 1994-05-06 Toshiba Corp 液晶表示装置
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JPH07199150A (ja) 1993-12-28 1995-08-04 Canon Inc 液晶表示装置
JP2873660B2 (ja) * 1994-01-08 1999-03-24 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP3678437B2 (ja) * 1994-03-16 2005-08-03 株式会社日立製作所 液晶表示装置の製造方法および液晶表示装置
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
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JP3897826B2 (ja) 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222432A (ja) * 1988-03-01 1989-09-05 Matsushita Electron Corp 半導体装置の製造方法
JPH02224255A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 液晶表示装置
JPH05136168A (ja) * 1991-11-12 1993-06-01 Toshiba Corp 薄膜トランジスタの製造方法
JPH06260643A (ja) * 1993-03-05 1994-09-16 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ

Also Published As

Publication number Publication date
JPH08264802A (ja) 1996-10-11
US5767529A (en) 1998-06-16
US7407838B2 (en) 2008-08-05
US6596572B1 (en) 2003-07-22
US20050077518A1 (en) 2005-04-14

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