KR960019877A - 반도체장치의 레이저 처리방법 - Google Patents

반도체장치의 레이저 처리방법 Download PDF

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KR960019877A
KR960019877A KR1019950044596A KR19950044596A KR960019877A KR 960019877 A KR960019877 A KR 960019877A KR 1019950044596 A KR1019950044596 A KR 1019950044596A KR 19950044596 A KR19950044596 A KR 19950044596A KR 960019877 A KR960019877 A KR 960019877A
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laser light
processing method
peripheral circuit
laser processing
semiconductor device
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KR100289289B1 (ko
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고이치로 다나카
나오아키 야마구치
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야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Abstract

액정표시장치를 구성하기 위해 반도체장치의 제조공정에서 필요로 하는 특성에 따라서 주변회로영역에 배치된 박막트랜지터와 픽셀영역에 배치된 박막트랜지스터를 별도로 형성하기 위한 기술을 제공하려는 것이다.
레이저광 조사에 의한 애닐링단계에 있어서, 반도체박막을 부분적으로 마스킹함으로써 레이저광이 반도체박막에 선택적으로 조사된다. 예를들어 활성매트릭스액정표시장치의 제조시에 서로 다른 조건하에서 레이저광을 주변회로영역과 픽셀영역을 조사하기 위해 마스크를 사용하여 레이저광이 필요한 조사에너지밀도로 조사된다.
이와같이 선택방식으로 필요한 정도의 결정성을 갖는 실리콘막이 얻어질 수 있다.

Description

반도체장치의 레이저 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1구체예에서 사용되는 레이저광 조사장치의 구조를 나타내는 사시도.

Claims (19)

  1. 단일기판상에 집적된 반도체장치의 제조공정에서의 반도체장치의 레이저 처리방법에 있어서, 상기 방법은 레이저광을 원하는 반도체특성에 따라서 결정된 서로 다른 조사에너지로 기판은 선택적으로 조사하는 단계로 구성되는 것을 특징으로 하는 반체장치의 레이저 처리방법.
  2. 제1항에 있어서, 레이저광은 기판이 레이저광으로 주사되는 동안에 조사되는 것을 특징으로 하는 반도체 장치의 레이저 처리방법.
  3. 제1항에 있어서, 레이저광은 스폿형 비임인 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  4. 제1항에 있어서, 레이저광은 선형 비임인 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  5. 제4항에 있어서, 레이저광의 선형 비임은 레이저광의 조사중에 일방향으로 주사되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  6. 상면에 반도체장치가 될 부재가 구비되거나 최종적으로 액정표시장치가 될 반도체장치가 구비되는 기판의 주변회로영역과 픽셀영역에 선형 레이저광을 서로 다른 주사에너지로 조사하는 단계로 구성되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  7. 제6항에 있어서, 주변회로영역은 시프트레지스터를 포함하는 것은 특징으로 하는 반도체장치의 레이저 처리방법.
  8. 제6항에 있어서, 픽셀영역에 매트릭스형태로 다수의 픽셀이 정렬되며, 각각의 픽셀에는 적어도 하나의 박막트랜지터 스위칭회로가 제공되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  9. 제6항에 있어서, 레이저광은 마스크를 사용하여 주변회로영역과 픽셀영역에 별도로 조사되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  10. 제6항에 있어서, 주변회로영역에는 실리콘의 결정화를 가속시키기 위한 금속원소가 첨가된 실리콘막이 형성되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  11. 제10항에 있어서, 금속원소는 Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au로 구성되는 그룹으로부터 선택된 하나의 금속 또는 다수의 금속인 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  12. 제10항에 있어서, 금속원소는 Ni이며, 1×1016cm-3-5×1019cm-3의 농도로 실리콘막에 첨가되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  13. 액정전기광학장치의 주변회로영역 및 픽셀영역을 각기 구성하며 마스크를 통해 레이저광을 선택적으로 조사함에 의해 서로 다른 레이저광에너지로 애닐링되는 부분들을 가지고 기판상에 형성된 반도체막에 레이저광을 조사하는 단계로 구성되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  14. 제13항에 있어서, 주변회로영역을 구성하기 위한 반도체막의 부분은 실리콘의 결정화를 가속화시키기 위해 금속원소의 작용으로 결정화되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  15. 제13항에 있어서, 주변회로영역에는 실리콘의 결정화를 가속시키기 위한 금속원소가 첨가된 실리콘막이 형성되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  16. 제14항에 있어서, 금속원소는 Ni이며, 1×1016cm-3-5×1019cm-3의 농도로 실리콘막에 첨가되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  17. 제13항에 있어서, 레이저광은 선형 비임인 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  18. 최종적으로 액정표시장치를 구성하게 될 기판상에 형성된 비결정성 실리콘막을 갖는 반도체장치의 레이저 처리방법에 있어서, 상기 방법은 비결정성 실리콘막에 산화실리콘막은 증착하는 제1단계와, 산화실리콘막을 패터닝함으로써 주변회로영역에 증착된 산화실리콘막의 부분을 제거하는 제2단계와, 실리콘의 결정화를 가속시키기 위한 금속원소를 주변회로영역의 비결정성 실리콘막의 부분속으로 도입하고 열처리를 수행하는 제3단계와, 주변회로영역의 비결정성 실리콘막의 부분을 레이저광으로 조사함으로써 결정화시키는 제4단계와, 나머지 모든 산화실리콘막을 에칭하여 제거하는 제5단계와, 제4단계에서 결정화된 실리콘막을 제4단계에서보다 40∼90%높은 조사에너지의 레이저광으로 조사하는 제6단계와, 픽셀영역의 비결정성 실리콘막의 부분을 제4단계에서와 같은 조사에너지의 레이저광으로 조사하는 제7단계와, 제6단계에서 조사된 실리콘막을 제6단계에서 보다 5∼30% 높은 조사에너지의 레이저광으로 조사하는 제8단계로 구성되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
  19. 제18항에 있어서, 픽셀영역 또는 주변회로영역의 실리콘막을 조사하는 단계에서, 레이저광 조사영역은 마스크를 사용하여 제한되는 것을 특징으로 하는 반도체장치의 레이저 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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