KR960010931B1 - 반도체 집접회로 및 그 제작방법 - Google Patents

반도체 집접회로 및 그 제작방법 Download PDF

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Publication number
KR960010931B1
KR960010931B1 KR1019920017498A KR920017498A KR960010931B1 KR 960010931 B1 KR960010931 B1 KR 960010931B1 KR 1019920017498 A KR1019920017498 A KR 1019920017498A KR 920017498 A KR920017498 A KR 920017498A KR 960010931 B1 KR960010931 B1 KR 960010931B1
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KR
South Korea
Prior art keywords
wiring
gate
electrode
insulating
gate electrode
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Expired - Fee Related
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KR1019920017498A
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English (en)
Korean (ko)
Inventor
순페이 야마자끼
야스히코 다케무라
아키라 마세
히데키 우오치
Original Assignee
가부시키가이샤 한도오따이 에네루기 겐큐쇼
순페이 야마자끼
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Application granted granted Critical
Publication of KR960010931B1 publication Critical patent/KR960010931B1/ko
Anticipated expiration legal-status Critical
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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1019920017498A 1991-09-25 1992-09-25 반도체 집접회로 및 그 제작방법 Expired - Fee Related KR960010931B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-273377 1991-09-25
JP27337791 1991-09-25

Publications (1)

Publication Number Publication Date
KR960010931B1 true KR960010931B1 (ko) 1996-08-13

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ID=17527054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920017498A Expired - Fee Related KR960010931B1 (ko) 1991-09-25 1992-09-25 반도체 집접회로 및 그 제작방법

Country Status (4)

Country Link
JP (1) JP2781706B2 (enrdf_load_stackoverflow)
KR (1) KR960010931B1 (enrdf_load_stackoverflow)
CN (8) CN100490159C (enrdf_load_stackoverflow)
TW (1) TW258835B (enrdf_load_stackoverflow)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3141979B2 (ja) * 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JPH07335904A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4421632B2 (ja) * 1996-01-19 2010-02-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4859266B2 (ja) * 1999-01-05 2012-01-25 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法および液晶表示装置
SG118117A1 (en) * 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100459733B1 (ko) * 2002-12-30 2004-12-03 삼성전자주식회사 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
CN100356554C (zh) * 2004-03-16 2007-12-19 私立逢甲大学 制作整合性散热基板的方法
KR101043992B1 (ko) * 2004-08-12 2011-06-24 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100645718B1 (ko) 2005-04-28 2006-11-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
CN101621037B (zh) * 2008-07-03 2011-10-05 中芯国际集成电路制造(上海)有限公司 Tft sas存储单元结构
CN102386237A (zh) * 2011-11-23 2012-03-21 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及装置和一种制备方法
ITRE20110109A1 (it) 2011-12-07 2013-06-08 Redox S R L Macchina da caffe' a risparmio energetico
CN109216437B (zh) * 2017-06-30 2021-08-24 无锡华润上华科技有限公司 场板的自对准制造方法及半导体器件的制造方法
CN109773638B (zh) * 2019-02-02 2024-12-27 南方科技大学 一种刀具、单晶碳化硅材料的加工方法及加工设备
CN110148601B (zh) * 2019-05-31 2022-12-20 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN114613748A (zh) * 2022-02-24 2022-06-10 上海交通大学 有源面板级扇出型封装结构及其制备方法

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JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS5611258A (en) * 1979-07-11 1981-02-04 Toray Ind Inc Installing method for lithoprinting plate to printer drum
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
US4470852A (en) * 1982-09-03 1984-09-11 Ncr Corporation Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
JPS625662A (ja) * 1985-07-01 1987-01-12 Nec Corp Ｓｏｉ型高耐圧ｉｃ
JPH07105338B2 (ja) * 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPS62104172A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置の製造方法
JPH061836B2 (ja) * 1985-10-31 1994-01-05 シャープ株式会社 薄膜トランジスタ
US4851363A (en) * 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
JPS6489464A (en) * 1987-09-30 1989-04-03 Toshiba Corp Semiconductor device and manufacture thereof
US4988642A (en) * 1988-05-25 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JPH03165575A (ja) * 1989-11-24 1991-07-17 Nec Corp 薄膜トランジスタとその製造方法
JP2717233B2 (ja) 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH04360580A (ja) * 1991-06-07 1992-12-14 Casio Comput Co Ltd 電界効果型トランジスタおよびその製造方法

Also Published As

Publication number Publication date
CN1041873C (zh) 1999-01-27
CN1073300A (zh) 1993-06-16
CN1254947A (zh) 2000-05-31
CN1147004C (zh) 2004-04-21
CN1525543A (zh) 2004-09-01
JPH05232515A (ja) 1993-09-10
CN1909235A (zh) 2007-02-07
CN1059518C (zh) 2000-12-13
CN1254955A (zh) 2000-05-31
CN1135095A (zh) 1996-11-06
CN1254951A (zh) 2000-05-31
CN100388443C (zh) 2008-05-14
CN1130766C (zh) 2003-12-10
CN1652312A (zh) 2005-08-10
TW258835B (enrdf_load_stackoverflow) 1995-10-01
CN1143395C (zh) 2004-03-24
CN100490159C (zh) 2009-05-20
JP2781706B2 (ja) 1998-07-30

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