JP2781706B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JP2781706B2 JP2781706B2 JP27539692A JP27539692A JP2781706B2 JP 2781706 B2 JP2781706 B2 JP 2781706B2 JP 27539692 A JP27539692 A JP 27539692A JP 27539692 A JP27539692 A JP 27539692A JP 2781706 B2 JP2781706 B2 JP 2781706B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- wiring
- gate
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 27
- 239000011229 interlayer Substances 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 150000003482 tantalum compounds Chemical class 0.000 claims description 2
- 150000003609 titanium compounds Chemical class 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 claims 1
- 238000007743 anodising Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 146
- 239000012535 impurity Substances 0.000 description 47
- 239000004973 liquid crystal related substance Substances 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 239000012212 insulator Substances 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- -1 and in particular Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000010407 anodic oxide Substances 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27337791 | 1991-09-25 | ||
| JP3-273377 | 1991-09-25 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36254497A Division JPH10154819A (ja) | 1992-09-19 | 1997-12-12 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05232515A JPH05232515A (ja) | 1993-09-10 |
| JP2781706B2 true JP2781706B2 (ja) | 1998-07-30 |
Family
ID=17527054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27539692A Expired - Lifetime JP2781706B2 (ja) | 1991-09-25 | 1992-09-19 | 半導体装置およびその作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2781706B2 (enrdf_load_stackoverflow) |
| KR (1) | KR960010931B1 (enrdf_load_stackoverflow) |
| CN (8) | CN100490159C (enrdf_load_stackoverflow) |
| TW (1) | TW258835B (enrdf_load_stackoverflow) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3141979B2 (ja) * | 1993-10-01 | 2001-03-07 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US5719065A (en) | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
| KR100291971B1 (ko) | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
| JP3469337B2 (ja) * | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4421632B2 (ja) * | 1996-01-19 | 2010-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4859266B2 (ja) * | 1999-01-05 | 2012-01-25 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタとその製造方法および液晶表示装置 |
| SG118117A1 (en) * | 2001-02-28 | 2006-01-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
| US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
| KR100459733B1 (ko) * | 2002-12-30 | 2004-12-03 | 삼성전자주식회사 | 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법 |
| US7973313B2 (en) | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
| CN100356554C (zh) * | 2004-03-16 | 2007-12-19 | 私立逢甲大学 | 制作整合性散热基板的方法 |
| KR101043992B1 (ko) * | 2004-08-12 | 2011-06-24 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
| KR100645718B1 (ko) | 2005-04-28 | 2006-11-14 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
| CN101621037B (zh) * | 2008-07-03 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | Tft sas存储单元结构 |
| CN102386237A (zh) * | 2011-11-23 | 2012-03-21 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管、阵列基板及装置和一种制备方法 |
| ITRE20110109A1 (it) | 2011-12-07 | 2013-06-08 | Redox S R L | Macchina da caffe' a risparmio energetico |
| CN109216437B (zh) * | 2017-06-30 | 2021-08-24 | 无锡华润上华科技有限公司 | 场板的自对准制造方法及半导体器件的制造方法 |
| CN109773638B (zh) * | 2019-02-02 | 2024-12-27 | 南方科技大学 | 一种刀具、单晶碳化硅材料的加工方法及加工设备 |
| CN110148601B (zh) * | 2019-05-31 | 2022-12-20 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
| CN114613748A (zh) * | 2022-02-24 | 2022-06-10 | 上海交通大学 | 有源面板级扇出型封装结构及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717233B2 (ja) | 1991-03-06 | 1998-02-18 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型電界効果半導体装置およびその作製方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52102690A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Semiconductor capacitance device |
| JPS5611258A (en) * | 1979-07-11 | 1981-02-04 | Toray Ind Inc | Installing method for lithoprinting plate to printer drum |
| JPS56111258A (en) * | 1980-01-07 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Thin film semiconductor device |
| US4470852A (en) * | 1982-09-03 | 1984-09-11 | Ncr Corporation | Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions |
| JPS625662A (ja) * | 1985-07-01 | 1987-01-12 | Nec Corp | Ｓｏｉ型高耐圧ｉｃ |
| JPH07105338B2 (ja) * | 1985-08-07 | 1995-11-13 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPS62104172A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH061836B2 (ja) * | 1985-10-31 | 1994-01-05 | シャープ株式会社 | 薄膜トランジスタ |
| US4851363A (en) * | 1986-07-11 | 1989-07-25 | General Motors Corporation | Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses |
| JPS6489464A (en) * | 1987-09-30 | 1989-04-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US4988642A (en) * | 1988-05-25 | 1991-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
| US5041888A (en) * | 1989-09-18 | 1991-08-20 | General Electric Company | Insulator structure for amorphous silicon thin-film transistors |
| JPH03165575A (ja) * | 1989-11-24 | 1991-07-17 | Nec Corp | 薄膜トランジスタとその製造方法 |
| JPH04360580A (ja) * | 1991-06-07 | 1992-12-14 | Casio Comput Co Ltd | 電界効果型トランジスタおよびその製造方法 |
-
1992
- 1992-09-19 JP JP27539692A patent/JP2781706B2/ja not_active Expired - Lifetime
- 1992-09-23 TW TW83100884A patent/TW258835B/zh not_active IP Right Cessation
- 1992-09-25 KR KR1019920017498A patent/KR960010931B1/ko not_active Expired - Fee Related
- 1992-09-25 CN CNB2006100934562A patent/CN100490159C/zh not_active Expired - Lifetime
- 1992-09-25 CN CNB2004100082826A patent/CN100388443C/zh not_active Expired - Lifetime
- 1992-09-25 CN CN92112490A patent/CN1041873C/zh not_active Expired - Lifetime
- 1992-09-25 CN CN 200510008063 patent/CN1652312A/zh active Pending
- 1992-09-25 CN CNB991203933A patent/CN1143395C/zh not_active Expired - Lifetime
-
1995
- 1995-11-25 CN CN95119391A patent/CN1059518C/zh not_active Expired - Fee Related
-
1999
- 1999-09-17 CN CNB991203895A patent/CN1147004C/zh not_active Expired - Lifetime
- 1999-09-17 CN CN 99120390 patent/CN1130766C/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717233B2 (ja) | 1991-03-06 | 1998-02-18 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型電界効果半導体装置およびその作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1041873C (zh) | 1999-01-27 |
| CN1073300A (zh) | 1993-06-16 |
| CN1254947A (zh) | 2000-05-31 |
| CN1147004C (zh) | 2004-04-21 |
| CN1525543A (zh) | 2004-09-01 |
| JPH05232515A (ja) | 1993-09-10 |
| CN1909235A (zh) | 2007-02-07 |
| CN1059518C (zh) | 2000-12-13 |
| CN1254955A (zh) | 2000-05-31 |
| CN1135095A (zh) | 1996-11-06 |
| CN1254951A (zh) | 2000-05-31 |
| CN100388443C (zh) | 2008-05-14 |
| CN1130766C (zh) | 2003-12-10 |
| CN1652312A (zh) | 2005-08-10 |
| TW258835B (enrdf_load_stackoverflow) | 1995-10-01 |
| CN1143395C (zh) | 2004-03-24 |
| CN100490159C (zh) | 2009-05-20 |
| KR960010931B1 (ko) | 1996-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2781706B2 (ja) | 半導体装置およびその作製方法 | |
| US6004831A (en) | Method for fabricating a thin film semiconductor device | |
| JP3277892B2 (ja) | ディスプレイ基板の製造方法 | |
| US7223996B2 (en) | Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors | |
| US6677221B2 (en) | Semiconductor device and the fabricating method therefor | |
| JP6867832B2 (ja) | アレイ基板、液晶表示装置、薄膜トランジスタ、およびアレイ基板の製造方法 | |
| JPH0818055A (ja) | 半導体集積回路およびその作製方法 | |
| JPH07321329A (ja) | 薄膜トランジスタの製造方法および液晶表示装置 | |
| JP3105408B2 (ja) | 液晶表示素子 | |
| JP2572379B2 (ja) | 薄膜トランジスタの製造方法 | |
| US12100711B2 (en) | Active matrix substrate and method for manufacturing same | |
| JP3390726B2 (ja) | 薄膜トランジスタの作製方法 | |
| JPH10284735A (ja) | 半導体装置 | |
| JPH11316557A (ja) | 半導体装置 | |
| JPH01102525A (ja) | 薄膜トランジスタアレー、その製造方法およびこれを用いた液晶表示装置 | |
| JPH11265000A (ja) | 液晶表示装置およびその製造方法 | |
| JPH10154819A (ja) | 半導体装置 | |
| JP2001057433A (ja) | 薄膜トランジスタの作製方法 | |
| JPH06104437A (ja) | 半導体装置 | |
| JP2004282101A (ja) | 半導体集積回路 | |
| JP2004336068A (ja) | 半導体集積回路の作製方法 | |
| JP2761496B2 (ja) | 薄膜状絶縁ゲイト型半導体装置およびその作製方法 | |
| JPH10133231A (ja) | 多層配線構造およびその製造方法と薄膜トランジスタアレイおよびその製造方法と液晶表示装置 | |
| KR950011024B1 (ko) | 액정표시장치의 박막트랜지스터의 제조방법 | |
| JP2004064056A (ja) | 半導体集積回路の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090515 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090515 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100515 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100515 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100515 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110515 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 15 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 15 |