TW258835B - - Google Patents

Info

Publication number
TW258835B
TW258835B TW83100884A TW83100884A TW258835B TW 258835 B TW258835 B TW 258835B TW 83100884 A TW83100884 A TW 83100884A TW 83100884 A TW83100884 A TW 83100884A TW 258835 B TW258835 B TW 258835B
Authority
TW
Taiwan
Application number
TW83100884A
Other languages
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW258835B publication Critical patent/TW258835B/zh

Links

TW83100884A 1991-09-25 1992-09-23 TW258835B (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27337791 1991-09-25

Publications (1)

Publication Number Publication Date
TW258835B true TW258835B (enrdf_load_stackoverflow) 1995-10-01

Family

ID=17527054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83100884A TW258835B (enrdf_load_stackoverflow) 1991-09-25 1992-09-23

Country Status (4)

Country Link
JP (1) JP2781706B2 (enrdf_load_stackoverflow)
KR (1) KR960010931B1 (enrdf_load_stackoverflow)
CN (8) CN100490159C (enrdf_load_stackoverflow)
TW (1) TW258835B (enrdf_load_stackoverflow)

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JP3141979B2 (ja) * 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JPH07335904A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4421632B2 (ja) * 1996-01-19 2010-02-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4859266B2 (ja) * 1999-01-05 2012-01-25 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法および液晶表示装置
SG118117A1 (en) * 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100459733B1 (ko) * 2002-12-30 2004-12-03 삼성전자주식회사 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
CN100356554C (zh) * 2004-03-16 2007-12-19 私立逢甲大学 制作整合性散热基板的方法
KR101043992B1 (ko) * 2004-08-12 2011-06-24 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100645718B1 (ko) 2005-04-28 2006-11-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
CN101621037B (zh) * 2008-07-03 2011-10-05 中芯国际集成电路制造(上海)有限公司 Tft sas存储单元结构
CN102386237A (zh) * 2011-11-23 2012-03-21 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及装置和一种制备方法
ITRE20110109A1 (it) 2011-12-07 2013-06-08 Redox S R L Macchina da caffe' a risparmio energetico
CN109216437B (zh) * 2017-06-30 2021-08-24 无锡华润上华科技有限公司 场板的自对准制造方法及半导体器件的制造方法
CN109773638B (zh) * 2019-02-02 2024-12-27 南方科技大学 一种刀具、单晶碳化硅材料的加工方法及加工设备
CN110148601B (zh) * 2019-05-31 2022-12-20 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN114613748A (zh) * 2022-02-24 2022-06-10 上海交通大学 有源面板级扇出型封装结构及其制备方法

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JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS5611258A (en) * 1979-07-11 1981-02-04 Toray Ind Inc Installing method for lithoprinting plate to printer drum
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
US4470852A (en) * 1982-09-03 1984-09-11 Ncr Corporation Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
JPS625662A (ja) * 1985-07-01 1987-01-12 Nec Corp Ｓｏｉ型高耐圧ｉｃ
JPH07105338B2 (ja) * 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPS62104172A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置の製造方法
JPH061836B2 (ja) * 1985-10-31 1994-01-05 シャープ株式会社 薄膜トランジスタ
US4851363A (en) * 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
JPS6489464A (en) * 1987-09-30 1989-04-03 Toshiba Corp Semiconductor device and manufacture thereof
US4988642A (en) * 1988-05-25 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JPH03165575A (ja) * 1989-11-24 1991-07-17 Nec Corp 薄膜トランジスタとその製造方法
JP2717233B2 (ja) 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH04360580A (ja) * 1991-06-07 1992-12-14 Casio Comput Co Ltd 電界効果型トランジスタおよびその製造方法

Also Published As

Publication number Publication date
CN1041873C (zh) 1999-01-27
CN1073300A (zh) 1993-06-16
CN1254947A (zh) 2000-05-31
CN1147004C (zh) 2004-04-21
CN1525543A (zh) 2004-09-01
JPH05232515A (ja) 1993-09-10
CN1909235A (zh) 2007-02-07
CN1059518C (zh) 2000-12-13
CN1254955A (zh) 2000-05-31
CN1135095A (zh) 1996-11-06
CN1254951A (zh) 2000-05-31
CN100388443C (zh) 2008-05-14
CN1130766C (zh) 2003-12-10
CN1652312A (zh) 2005-08-10
CN1143395C (zh) 2004-03-24
CN100490159C (zh) 2009-05-20
KR960010931B1 (ko) 1996-08-13
JP2781706B2 (ja) 1998-07-30

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