KR960010336B1 - 웨이퍼로부터 물질을 제거하기 위한 시스템 - Google Patents

웨이퍼로부터 물질을 제거하기 위한 시스템 Download PDF

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Publication number
KR960010336B1
KR960010336B1 KR1019920007652A KR920007652A KR960010336B1 KR 960010336 B1 KR960010336 B1 KR 960010336B1 KR 1019920007652 A KR1019920007652 A KR 1019920007652A KR 920007652 A KR920007652 A KR 920007652A KR 960010336 B1 KR960010336 B1 KR 960010336B1
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KR
South Korea
Prior art keywords
wafer
profile data
thickness profile
silicon
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019920007652A
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English (en)
Korean (ko)
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KR920022374A (ko
Inventor
비. 자로윈 찰스
디. 볼링거 엘.
Original Assignee
휴우즈 에어크라프트 캄파니
완다 케이. 덴슨-로우
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR920022374A publication Critical patent/KR920022374A/ko
Application granted granted Critical
Publication of KR960010336B1 publication Critical patent/KR960010336B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H10P50/00—
    • H10P72/0604—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H10P50/242—
    • H10P72/0421—
    • H10P74/203—
    • H10P74/23—
    • H10P90/1914—
    • H10W10/181—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1019920007652A 1991-05-07 1992-05-06 웨이퍼로부터 물질을 제거하기 위한 시스템 Expired - Fee Related KR960010336B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/696,897 US5254830A (en) 1991-05-07 1991-05-07 System for removing material from semiconductor wafers using a contained plasma
US696,897 1991-05-07

Publications (2)

Publication Number Publication Date
KR920022374A KR920022374A (ko) 1992-12-19
KR960010336B1 true KR960010336B1 (ko) 1996-07-30

Family

ID=24798980

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920007652A Expired - Fee Related KR960010336B1 (ko) 1991-05-07 1992-05-06 웨이퍼로부터 물질을 제거하기 위한 시스템

Country Status (7)

Country Link
US (1) US5254830A (cg-RX-API-DMAC10.html)
EP (1) EP0514046B1 (cg-RX-API-DMAC10.html)
JP (1) JP2565617B2 (cg-RX-API-DMAC10.html)
KR (1) KR960010336B1 (cg-RX-API-DMAC10.html)
DE (1) DE69228020T2 (cg-RX-API-DMAC10.html)
IL (1) IL101474A (cg-RX-API-DMAC10.html)
TW (1) TW198127B (cg-RX-API-DMAC10.html)

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JP3612158B2 (ja) * 1996-11-18 2005-01-19 スピードファム株式会社 プラズマエッチング方法及びその装置
JPH10223497A (ja) * 1997-01-31 1998-08-21 Shin Etsu Handotai Co Ltd 貼り合わせ基板の作製方法
JP3917703B2 (ja) * 1997-02-18 2007-05-23 スピードファム株式会社 プラズマエッチング方法及びその装置
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
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US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
JP3327180B2 (ja) 1997-08-29 2002-09-24 信越半導体株式会社 Ｓｏｉ層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
JP3606422B2 (ja) * 1998-03-18 2005-01-05 株式会社荏原製作所 ガスポリッシング方法及びポリッシング装置
US6069366A (en) * 1998-03-30 2000-05-30 Advanced Micro Devices, Inc. Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit
JPH11302878A (ja) * 1998-04-21 1999-11-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
JP3456143B2 (ja) 1998-05-01 2003-10-14 信越半導体株式会社 積層材料および光機能素子
JP3635200B2 (ja) 1998-06-04 2005-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP3358550B2 (ja) 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
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US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US6294395B1 (en) * 1999-08-26 2001-09-25 Advanced Micro Devices, Inc. Back side reactive ion etch
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
US6537606B2 (en) * 2000-07-10 2003-03-25 Epion Corporation System and method for improving thin films by gas cluster ion beam processing
US6558963B1 (en) * 2000-07-25 2003-05-06 Advanced Micro Devices, Inc. Method and system for controlling the plasma treatment of a titanium nitride layer formed by a chemical vapor deposition process
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
JP2002231700A (ja) * 2001-02-05 2002-08-16 Speedfam Co Ltd ナノトポグラフィ除去方法
JP4460788B2 (ja) * 2001-02-23 2010-05-12 スピードファム株式会社 局所エッチング方法
US6896949B1 (en) 2001-03-15 2005-05-24 Bookham (Us) Inc. Wafer scale production of optical elements
JP3975321B2 (ja) * 2001-04-20 2007-09-12 信越化学工業株式会社 フォトマスク用シリカガラス系基板及びフォトマスク用シリカガラス系基板の平坦化方法
JP3627805B2 (ja) * 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
FR2830682B1 (fr) * 2001-10-04 2004-07-09 Centre Nat Etd Spatiales Procede et dispositif d'amincissement d'une plaquette de circuit integre
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US6500681B1 (en) * 2002-01-11 2002-12-31 Advanced Micro Devices, Inc. Run-to-run etch control by feeding forward measured metal thickness
JP4020739B2 (ja) * 2002-09-27 2007-12-12 株式会社荏原製作所 ポリッシング装置
JP2004128079A (ja) * 2002-09-30 2004-04-22 Speedfam Co Ltd Ｓｏｉウェハーのための多段局所ドライエッチング方法
JP2004235478A (ja) * 2003-01-30 2004-08-19 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US6759341B1 (en) 2003-04-09 2004-07-06 Tru-Si Technologies, Inc. Wafering method comprising a plasma etch with a gas emitting wafer holder
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
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TWI237915B (en) * 2004-12-24 2005-08-11 Cleavage Entpr Co Ltd Manufacturing method of light-emitting diode
US7279657B2 (en) * 2005-06-13 2007-10-09 Applied Materials, Inc. Scanned rapid thermal processing with feed forward control
JP5168788B2 (ja) 2006-01-23 2013-03-27 信越半導体株式会社 Ｓｏｉウエーハの製造方法
DE102006023946A1 (de) * 2006-05-17 2007-11-22 Infineon Technologies Ag Verfahren und Vorrichtung zur Reduktion einer Verformung eines Wafers
JP5415676B2 (ja) * 2007-05-30 2014-02-12 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
CN112420509B (zh) * 2014-12-19 2024-03-19 环球晶圆股份有限公司 用于对半导体结构执行外延平滑工艺的系统和方法
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Also Published As

Publication number Publication date
US5254830A (en) 1993-10-19
EP0514046B1 (en) 1998-12-30
DE69228020T2 (de) 1999-05-27
EP0514046A1 (en) 1992-11-19
KR920022374A (ko) 1992-12-19
IL101474A0 (en) 1992-12-30
JP2565617B2 (ja) 1996-12-18
IL101474A (en) 1995-11-27
TW198127B (cg-RX-API-DMAC10.html) 1993-01-11
DE69228020D1 (de) 1999-02-11
JPH05160074A (ja) 1993-06-25

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