KR960009109A - 표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어 - Google Patents

표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어 Download PDF

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Publication number
KR960009109A
KR960009109A KR1019950024042A KR19950024042A KR960009109A KR 960009109 A KR960009109 A KR 960009109A KR 1019950024042 A KR1019950024042 A KR 1019950024042A KR 19950024042 A KR19950024042 A KR 19950024042A KR 960009109 A KR960009109 A KR 960009109A
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South Korea
Prior art keywords
aspect ratio
high aspect
low resistivity
surface diffusion
vias due
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KR1019950024042A
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English (en)
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KR0177537B1 (ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
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    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019950024042A 1994-08-05 1995-08-04 표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어 KR0177537B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28660594A 1994-08-05 1994-08-05
US8/286,605 1994-08-05

Publications (2)

Publication Number Publication Date
KR960009109A true KR960009109A (ko) 1996-03-22
KR0177537B1 KR0177537B1 (ko) 1999-04-15

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KR1019950024042A KR0177537B1 (ko) 1994-08-05 1995-08-04 표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어

Country Status (6)

Country Link
US (4) US5856026A (ko)
EP (2) EP0915501B1 (ko)
JP (1) JP3083735B2 (ko)
KR (1) KR0177537B1 (ko)
DE (2) DE69513459T2 (ko)
TW (1) TW344101B (ko)

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ATE188863T1 (de) * 1994-02-25 2000-02-15 Fischell Robert Stent
DE69513459T2 (de) * 1994-08-05 2000-10-26 Ibm Verfahren zur Herstellung einer Al-Ge Legierung mit einer WGe Polierstoppschicht
US5789317A (en) * 1996-04-12 1998-08-04 Micron Technology, Inc. Low temperature reflow method for filling high aspect ratio contacts
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US5916453A (en) * 1996-09-20 1999-06-29 Fujitsu Limited Methods of planarizing structures on wafers and substrates by polishing
JP3583562B2 (ja) 1996-10-18 2004-11-04 株式会社東芝 半導体装置
KR100221656B1 (ko) * 1996-10-23 1999-09-15 구본준 배선 형성 방법
US6171957B1 (en) * 1997-07-16 2001-01-09 Mitsubishi Denki Kabushiki Kaisha Manufacturing method of semiconductor device having high pressure reflow process
US6100184A (en) * 1997-08-20 2000-08-08 Sematech, Inc. Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
US6140228A (en) 1997-11-13 2000-10-31 Cypress Semiconductor Corporation Low temperature metallization process
US6211073B1 (en) 1998-02-27 2001-04-03 Micron Technology, Inc. Methods for making copper and other metal interconnections in integrated circuits
US6015749A (en) * 1998-05-04 2000-01-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
KR100265772B1 (ko) * 1998-07-22 2000-10-02 윤종용 반도체 장치의 배선구조 및 그 제조방법
US6287977B1 (en) * 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6284656B1 (en) 1998-08-04 2001-09-04 Micron Technology, Inc. Copper metallurgy in integrated circuits
US6288442B1 (en) 1998-09-10 2001-09-11 Micron Technology, Inc. Integrated circuit with oxidation-resistant polymeric layer
US6004188A (en) * 1998-09-10 1999-12-21 Chartered Semiconductor Manufacturing Ltd. Method for forming copper damascene structures by using a dual CMP barrier layer
US6051496A (en) * 1998-09-17 2000-04-18 Taiwan Semiconductor Manufacturing Company Use of stop layer for chemical mechanical polishing of CU damascene
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EP0915501B1 (en) 2003-02-26
EP0915501A1 (en) 1999-05-12
EP0697730A3 (en) 1996-08-14
DE69513459D1 (de) 1999-12-30
KR0177537B1 (ko) 1999-04-15
US5897370A (en) 1999-04-27
DE69513459T2 (de) 2000-10-26
DE69529775T2 (de) 2003-10-16
EP0697730B1 (en) 1999-11-24
US5731245A (en) 1998-03-24
JPH0864599A (ja) 1996-03-08
US5877084A (en) 1999-03-02
US5856026A (en) 1999-01-05
TW344101B (en) 1998-11-01
EP0697730A2 (en) 1996-02-21
JP3083735B2 (ja) 2000-09-04

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