DE69724980D1 - Leitende schicht mit antireflexionsoberfläche - Google Patents
Leitende schicht mit antireflexionsoberflächeInfo
- Publication number
- DE69724980D1 DE69724980D1 DE69724980T DE69724980T DE69724980D1 DE 69724980 D1 DE69724980 D1 DE 69724980D1 DE 69724980 T DE69724980 T DE 69724980T DE 69724980 T DE69724980 T DE 69724980T DE 69724980 D1 DE69724980 D1 DE 69724980D1
- Authority
- DE
- Germany
- Prior art keywords
- conductive layer
- reflection surface
- reflection
- conductive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/704,162 US5841179A (en) | 1996-08-28 | 1996-08-28 | Conductive layer with anti-reflective surface portion |
US704162 | 1996-08-28 | ||
PCT/US1997/005133 WO1998009318A1 (en) | 1996-08-28 | 1997-03-28 | Conductive layer with anti-reflective surface portion |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69724980D1 true DE69724980D1 (de) | 2003-10-23 |
DE69724980T2 DE69724980T2 (de) | 2004-07-22 |
Family
ID=24828348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69724980T Expired - Fee Related DE69724980T2 (de) | 1996-08-28 | 1997-03-28 | Leitende schicht mit antireflexionsoberfläche |
Country Status (4)
Country | Link |
---|---|
US (2) | US5841179A (de) |
EP (1) | EP0932912B1 (de) |
DE (1) | DE69724980T2 (de) |
WO (1) | WO1998009318A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100243266B1 (ko) * | 1996-10-24 | 2000-03-02 | 윤종용 | (Ge,Si)Nx반사방지막및이를이용한패턴형성방법 |
US6107190A (en) * | 1997-01-30 | 2000-08-22 | Nec Corporation | Method of fabricating semiconductor device |
US6121123A (en) * | 1997-09-05 | 2000-09-19 | Advanced Micro Devices, Inc. | Gate pattern formation using a BARC as a hardmask |
KR100269330B1 (ko) * | 1998-06-29 | 2000-12-01 | 윤종용 | 반사 방지 캡 및 스페이서를 구비하는 반도체장치, 이의 제조방법 및 이를 이용한 포토레지스트 패턴의 제조방법 |
US6294465B1 (en) * | 1999-10-29 | 2001-09-25 | Agere Systems Guardian Corp. | Method for making integrated circuits having features with reduced critical dimensions |
AUPR174800A0 (en) * | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
US6642152B1 (en) | 2001-03-19 | 2003-11-04 | Advanced Micro Devices, Inc. | Method for ultra thin resist linewidth reduction using implantation |
MY144264A (en) | 2001-11-29 | 2011-08-29 | Transform Solar Pty Ltd | Semiconductur texturing process |
US20060254921A1 (en) * | 2005-05-10 | 2006-11-16 | Xerox Corporation | Anodization process and layers produced therefrom |
DE102006041004B4 (de) | 2006-08-31 | 2017-12-21 | Advanced Micro Devices, Inc. | Technik zum Reduzieren plasmainduzierter Ätzschäden während der Herstellung von Kontaktdurchführungen in Zwischenschichtdielektrika |
CN103681248B (zh) * | 2012-09-04 | 2017-02-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
DE102018127447B4 (de) * | 2017-11-30 | 2021-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Anti-Reflexionsbeschichtung durch Ionenimplantation für lithographische Strukturierung |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268347A (en) * | 1979-01-26 | 1981-05-19 | Exxon Research & Engineering Co. | Low reflectivity surface formed by particle track etching |
US4704367A (en) * | 1986-04-21 | 1987-11-03 | Alvis John R | Suppression of hillock growth through multiple thermal cycles by argon implantation |
US4771010A (en) * | 1986-11-21 | 1988-09-13 | Xerox Corporation | Energy beam induced layer disordering (EBILD) |
US4820611A (en) * | 1987-04-24 | 1989-04-11 | Advanced Micro Devices, Inc. | Titanium nitride as an antireflection coating on highly reflective layers for photolithography |
US5594280A (en) * | 1987-10-08 | 1997-01-14 | Anelva Corporation | Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means |
US4942451A (en) * | 1988-09-27 | 1990-07-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having improved antireflection coating |
US4933304A (en) * | 1988-11-03 | 1990-06-12 | Sgs-Thomson Microelectronics, Inc. | Method for reducing the surface reflectance of a metal layer during semiconductor processing |
US4997518A (en) * | 1989-03-31 | 1991-03-05 | Oki Electric Industry Co., Ltd. | Method for forming an electrode layer by a laser flow technique |
US5076674A (en) * | 1990-03-09 | 1991-12-31 | Donnelly Corporation | Reduced first surface reflectivity electrochromic/electrochemichromic rearview mirror assembly |
MY107855A (en) * | 1990-07-06 | 1996-06-29 | Tsubouchi Kazuo | Metal film forming method. |
US5139974A (en) * | 1991-01-25 | 1992-08-18 | Micron Technology, Inc. | Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer |
US5219788A (en) * | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US5124780A (en) * | 1991-06-10 | 1992-06-23 | Micron Technology, Inc. | Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization |
US5166093A (en) * | 1991-07-31 | 1992-11-24 | Micron Technology, Inc. | Method to reduce the reflectivity of a semi-conductor metallic surface |
DE4231312C2 (de) * | 1992-09-18 | 1996-10-02 | Siemens Ag | Antireflexschicht und Verfahren zur lithografischen Strukturierung einer Schicht |
JPH06302539A (ja) * | 1993-04-15 | 1994-10-28 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US5378659A (en) * | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
US5427666A (en) * | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
JPH07201700A (ja) * | 1993-12-28 | 1995-08-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR960005761A (ko) * | 1994-07-27 | 1996-02-23 | 이데이 노부유끼 | 반도체장치 |
-
1996
- 1996-08-28 US US08/704,162 patent/US5841179A/en not_active Expired - Fee Related
-
1997
- 1997-03-28 WO PCT/US1997/005133 patent/WO1998009318A1/en active IP Right Grant
- 1997-03-28 EP EP97916256A patent/EP0932912B1/de not_active Expired - Lifetime
- 1997-03-28 DE DE69724980T patent/DE69724980T2/de not_active Expired - Fee Related
-
1998
- 1998-08-03 US US09/127,887 patent/US6087255A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0932912B1 (de) | 2003-09-17 |
US5841179A (en) | 1998-11-24 |
US6087255A (en) | 2000-07-11 |
WO1998009318A1 (en) | 1998-03-05 |
EP0932912A1 (de) | 1999-08-04 |
DE69724980T2 (de) | 2004-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |