KR960005761A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR960005761A
KR960005761A KR1019950021968A KR19950021968A KR960005761A KR 960005761 A KR960005761 A KR 960005761A KR 1019950021968 A KR1019950021968 A KR 1019950021968A KR 19950021968 A KR19950021968 A KR 19950021968A KR 960005761 A KR960005761 A KR 960005761A
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KR
South Korea
Prior art keywords
film
semiconductor device
gate electrode
permeation prevention
hydrogen permeation
Prior art date
Application number
KR1019950021968A
Other languages
English (en)
Inventor
마사노리 쓰가모도
데쓰오 고죠
Original Assignee
이데이 노부유끼
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17552694A external-priority patent/JPH0846186A/ja
Priority claimed from JP17705594A external-priority patent/JPH0846188A/ja
Application filed by 이데이 노부유끼, 소니 가부시기가이샤 filed Critical 이데이 노부유끼
Publication of KR960005761A publication Critical patent/KR960005761A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반사방지막으로서 산질화실리콘(SiON)계 박막을 사용하여 패터닝이 이루어지고, SiON계 박막에 함유되는 수소에 의한 전기특성의 열화가 방지된 반도체장치에 관한 것으로서, 기판과, 상기 기판의 표면에 형성된 게이트절연막과, 상기 게이트절연막상에 형성된 게이트전극과, 상기 게이트전극과 공통의 패턴을 가지고, 게이트전극상에 적층된 수소를 함유하는 제1의 반사방지막과, 상기 게이트절연막과 상기 제1의 반사방지막과의 사이에 형성된 수소투과방지막으로 이루어진다.

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 게이트전극의 패터닝에 사용한 반사방지막으로부터 확산하는 수소가 게이트절연막에 도달하지 않는 구조를 가지는 본 발명의 반도체장치의 일구성예를 나타낸 모식적 단면도이다.
제7도는 제6의 웨이퍼의 제조프로세스를 나타낸 것이며, 텅스텐실리사이드층상에 수소투과방지막을 성막하고나서, 반사방지막, 오프셋산화막, 포토레지스트도막이 형성된 상태를 나타낸 모식적 단면도이다.
제8도는 제7도의 웨이퍼에 있으서, 게이트전극의 패터닝이 이루어진 상태를 나타낸 모식적 단면도이다.

Claims (11)

  1. 기판과, 상기 기판의 표면에 형성된 게이트절연막과, 상기 게이트절연상에 형성된 게이트전극과, 상기 게이트전극과 공통의 패턴을 가지고, 게이트전극상에 적층된 수소를 함유하는 제1의 반사방지막과, 상기 게이트절연막과 상기 제1의 반사방지막과의 사이에 형성된 수소투과방지막으로 이루어지는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 게이트절연막이 산호실리콘제 재료로 구성되어 있는 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 제1의 반사방지막이 산질화실리콘제 막인 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 기판상에 형성된 상층배선층으로 이루어지고, 이 상층배선층과 공통의 패턴을 가지고, 상층배선층상에 적층된 수로를 함유하는 제2의 반사방지막을 더 가지는 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 상기 제2의 반사방지막이 산질화실리콘계 재료로 형성되어 있는 것을 특징으로 하는 반도체장치.
  6. 제3항에 있어서, 상기 수소투과방지막이 상기 게이트전극을 피복하도록 형성된 것을 특징으로 하는 반도체장치.
  7. 제6항에 있어서, 상기 수소투과방지막이 상기 게이트전극과 상층배선층과 사이의 층간절연막인 것을 특징으로 하는 반도체장치.
  8. 제1항에 있어서, 상기 수소투과방지막이 저압화학기상성장법으로 성막된 질화실리콘계 막인 것을 특징으로 하는 반도체장치.
  9. 제1항에 있어서,상기 수소투과방지막이 플라즈마 CVD법으로 형성된 산화실리콘계 막인 것을 특징으로 하는 반도체장치.
  10. 제1항에 있어서, 상기 수소투과방지막이 티탄막이고, 상기 게이트전극의 일부로서 형성되어 것을 특징으로 하는 반도체장치.
  11. 제1항에 있어서, 상기 수소투과방지막이 티탄실리사이드막이고, 상기 게이트전극의 일부로서 형성되어 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950021968A 1994-07-27 1995-07-25 반도체장치 KR960005761A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1994-175526 1994-07-27
JP17552694A JPH0846186A (ja) 1994-07-27 1994-07-27 半導体装置
JP1994-177055 1994-07-28
JP17705594A JPH0846188A (ja) 1994-07-28 1994-07-28 半導体装置

Publications (1)

Publication Number Publication Date
KR960005761A true KR960005761A (ko) 1996-02-23

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KR1019950021968A KR960005761A (ko) 1994-07-27 1995-07-25 반도체장치

Country Status (2)

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US (1) US5600165A (ko)
KR (1) KR960005761A (ko)

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