KR970030668A - 반도체장치의 금속배선 형성 방법 - Google Patents

반도체장치의 금속배선 형성 방법 Download PDF

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Publication number
KR970030668A
KR970030668A KR1019950043613A KR19950043613A KR970030668A KR 970030668 A KR970030668 A KR 970030668A KR 1019950043613 A KR1019950043613 A KR 1019950043613A KR 19950043613 A KR19950043613 A KR 19950043613A KR 970030668 A KR970030668 A KR 970030668A
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KR
South Korea
Prior art keywords
metal film
depositing
film
wiring
vapor deposition
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KR1019950043613A
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English (en)
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KR100219061B1 (ko
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안희복
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김주용
현대전자산업주식회사
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Priority to KR1019950043613A priority Critical patent/KR100219061B1/ko
Publication of KR970030668A publication Critical patent/KR970030668A/ko
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Publication of KR100219061B1 publication Critical patent/KR100219061B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Abstract

본 발명은 반도체 기판상의 제 1절연막을 식각하여 콘택 홀을 형성하는 단계; 수소를 플로우시키면서 화학기상증착으로 배선용 제 1금속막을 증착하는 단계; 상기 제 1금속막을 화학적 기계적 폴리싱으로 에치백하는 단계; 에치백된 상기 제 1금속막 상의 불순물을 희석된 HF용액에서 세정하는 단계; 전체구조 상부에 상기 제 1금속막 표면이 노출되는 개공부를 가지는 제 2절연막을 형성하는 단계; 및 전체 구조 상부에 수소를 플로우시키면서 화학기상증착으로 배선용 제 2금속막을 증착하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법에 관한 것으로, 배선용 금속의 화학기상증착을 용이하게 실시하여 층덮힘을 개선하고 불순물에 의한 오염을 방지하여 소자의 특성 및 제조수율을 증가시키는 효과가 있다.

Description

반도체장치의 금속배선 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도 내지 제1d도는 본 발명의 일실시예에 따른 금속배선 형성 공정도.

Claims (4)

  1. 반도체 기판상의 제 1절연막을 식각하여 콘택 홀을 형성하는 단계; 수소를 플로우시키면서 화학기상증착으로배선용 제 1금속막을 증착하는 단계; 상기 제 1금속막을 화학적 기계적 폴리싱으로 에치백하는 단계; 에치백된 상기 제 1금속막 상의 불순물을 희석된 HF용액에서 세정하는 단계; 전체구조 상부에 상기 제 1금속막 표면이 노출되는 개공부를 가지는 제 2절연막을 형성하는 단계; 및 전체 구조 상부에 수소를 플로우시키면서 화학기상증착으로 배선용 제 2금속막을 증착하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법.
  2. 제 1항에 있어서, 상기 제 1 및 제 2금속막은 소정량의 실리콘이 함유된 구리막인 것을 특징으로 하는 금속배선 형성방법.
  3. 제 2항에 있어서, 상기 제 1 및 제 2금속막은 200∼400mTorr의 압력과 200∼400℃의 온도 분위기에서 증착되는 것을 특징으로 하는 금속배선 형성방법.
  4. 제 2항에 있어서, 상기 구리막은 실리콘이 0.5% 함유된 것을 특징으로 하는 금속배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950043613A 1995-11-24 1995-11-24 반도체 장치의 금속배선 형성 방법 KR100219061B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950043613A KR100219061B1 (ko) 1995-11-24 1995-11-24 반도체 장치의 금속배선 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950043613A KR100219061B1 (ko) 1995-11-24 1995-11-24 반도체 장치의 금속배선 형성 방법

Publications (2)

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KR970030668A true KR970030668A (ko) 1997-06-26
KR100219061B1 KR100219061B1 (ko) 1999-09-01

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KR1019950043613A KR100219061B1 (ko) 1995-11-24 1995-11-24 반도체 장치의 금속배선 형성 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587028B1 (ko) * 1999-03-25 2006-06-07 주식회사 하이닉스반도체 반도체소자의 구리박막 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3180779B2 (ja) * 1998-10-05 2001-06-25 日本電気株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587028B1 (ko) * 1999-03-25 2006-06-07 주식회사 하이닉스반도체 반도체소자의 구리박막 제조방법

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