DE69807103T2 - Halbleitende photoelektrische oberfläche - Google Patents

Halbleitende photoelektrische oberfläche

Info

Publication number
DE69807103T2
DE69807103T2 DE69807103T DE69807103T DE69807103T2 DE 69807103 T2 DE69807103 T2 DE 69807103T2 DE 69807103 T DE69807103 T DE 69807103T DE 69807103 T DE69807103 T DE 69807103T DE 69807103 T2 DE69807103 T2 DE 69807103T2
Authority
DE
Germany
Prior art keywords
semiconducting
photoelectric surface
photoelectric
semiconducting photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69807103T
Other languages
English (en)
Other versions
DE69807103D1 (de
Inventor
Tokuaki Nihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE69807103D1 publication Critical patent/DE69807103D1/de
Application granted granted Critical
Publication of DE69807103T2 publication Critical patent/DE69807103T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
DE69807103T 1997-09-24 1998-09-11 Halbleitende photoelektrische oberfläche Expired - Fee Related DE69807103T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25883797A JPH1196896A (ja) 1997-09-24 1997-09-24 半導体光電面
PCT/JP1998/004119 WO1999016098A1 (fr) 1997-09-24 1998-09-11 Surface photoelectrique de semi-conducteur

Publications (2)

Publication Number Publication Date
DE69807103D1 DE69807103D1 (de) 2002-09-12
DE69807103T2 true DE69807103T2 (de) 2003-01-23

Family

ID=17325721

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69807103T Expired - Fee Related DE69807103T2 (de) 1997-09-24 1998-09-11 Halbleitende photoelektrische oberfläche

Country Status (5)

Country Link
EP (1) EP1024513B1 (de)
JP (1) JPH1196896A (de)
AU (1) AU9002998A (de)
DE (1) DE69807103T2 (de)
WO (1) WO1999016098A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2249877C2 (ru) * 2003-04-29 2005-04-10 Бенеманская Галина Вадимовна Устройство для получения фотоэлектронной эмиссии в вакуум
JP2006302843A (ja) * 2005-04-25 2006-11-02 Hamamatsu Photonics Kk 光電面及びそれを備える電子管
RU2454750C2 (ru) * 2010-08-02 2012-06-27 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН Фотокатод
CN102087937A (zh) * 2011-01-07 2011-06-08 南京理工大学 指数掺杂GaN紫外光电阴极材料结构及其制备方法
US9478402B2 (en) * 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
CN105428183B (zh) * 2015-11-17 2017-08-04 南京理工大学 一种反射式NEA GaN纳米线阵列光电阴极及制备方法
WO2018222528A1 (en) 2017-05-30 2018-12-06 Carrier Corporation Semiconductor film and phototube light detector

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL147572B (nl) * 1964-12-02 1975-10-15 Philips Nv Elektrische ontladingsbuis met een fotokathode.
US3644770A (en) * 1968-01-18 1972-02-22 Varian Associates Photoemitter having a p-type semiconductive substrate overlaid with cesium and n-type cesium oxide layers
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
FR2217805A1 (en) * 1973-02-13 1974-09-06 Labo Electronique Physique Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
US5047821A (en) * 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
JPH0750587B2 (ja) * 1991-02-25 1995-05-31 浜松ホトニクス株式会社 半導体光電子放出体
JPH06223709A (ja) * 1993-01-25 1994-08-12 Katsumi Kishino 偏極電子線発生素子

Also Published As

Publication number Publication date
WO1999016098A1 (fr) 1999-04-01
EP1024513B1 (de) 2002-08-07
JPH1196896A (ja) 1999-04-09
EP1024513A4 (de) 2000-09-20
EP1024513A1 (de) 2000-08-02
DE69807103D1 (de) 2002-09-12
AU9002998A (en) 1999-04-12

Similar Documents

Publication Publication Date Title
DE69840608D1 (de) Selbsttastende photoempfindliche oberfläche
DE69829828D1 (de) Photoelektrische Umwandlungsanordnung
DE69818365D1 (de) Photoelektrische Umwandlungsvorrichtung
DE69835127D1 (de) Photoelektrische Umwandlungsvorrichtung
DE69841301D1 (de) Dünnschicht photoelektrischer wandler
DE69841511D1 (de) Halbleiter
BR9609275A (pt) Superficie funcional aperfeiçoada
DE69805048D1 (de) Photodiode
DE69721109D1 (de) Photoelektrische Umwandlervorrichtung mit Ladungsabschöpfung
PT887320E (pt) Vidro verde-escuro sodo-calcico
DK0826790T3 (da) Diborid-coatet presseoverflade
DE69731545D1 (de) Wärmeabsorbierende oberflächenbeschichtung
DE59702884D1 (de) Cyclopentyl-Verbindungen
DE69825808D1 (de) Photoelektrische Umwandlungsanordnung
DK1029211T3 (da) Tørreindretning
DE69826364D1 (de) Kodierer
DE69807103D1 (de) Halbleitende photoelektrische oberfläche
DE59806256D1 (de) Lichtschranke
DE69841156D1 (de) Halbleiter
DE29710643U1 (de) Oberflächenentwässerungseinrichtung
DK1005511T3 (da) Overfladebehandling
DE29700920U1 (de) Solarelementträger
DE59801819D1 (de) Walze
DE29711826U1 (de) Markise
DE29601715U1 (de) Solarelementträger

Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee