DE69805048D1 - Photodiode - Google Patents

Photodiode

Info

Publication number
DE69805048D1
DE69805048D1 DE69805048T DE69805048T DE69805048D1 DE 69805048 D1 DE69805048 D1 DE 69805048D1 DE 69805048 T DE69805048 T DE 69805048T DE 69805048 T DE69805048 T DE 69805048T DE 69805048 D1 DE69805048 D1 DE 69805048D1
Authority
DE
Germany
Prior art keywords
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69805048T
Other languages
English (en)
Other versions
DE69805048T2 (de
Inventor
Yoshiki Kuhara
Yasuhiro Iguchi
Tadashi Saito
Hitoshi Terauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69805048D1 publication Critical patent/DE69805048D1/de
Application granted granted Critical
Publication of DE69805048T2 publication Critical patent/DE69805048T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE69805048T 1997-12-09 1998-12-09 Photodiode Expired - Fee Related DE69805048T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36174497A JP3484962B2 (ja) 1997-12-09 1997-12-09 受光素子

Publications (2)

Publication Number Publication Date
DE69805048D1 true DE69805048D1 (de) 2002-05-29
DE69805048T2 DE69805048T2 (de) 2002-10-31

Family

ID=18474727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69805048T Expired - Fee Related DE69805048T2 (de) 1997-12-09 1998-12-09 Photodiode

Country Status (4)

Country Link
US (1) US6218684B1 (de)
EP (1) EP0924776B1 (de)
JP (1) JP3484962B2 (de)
DE (1) DE69805048T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001189468A (ja) * 2000-01-05 2001-07-10 Sumitomo Electric Ind Ltd 光モジュール
DE10104015A1 (de) * 2001-01-31 2002-08-01 Bosch Gmbh Robert Optischer Detektor und Verfahren zum Herstellen einer Anordnung mehrerer Halbleiterschichten
US20030106988A1 (en) * 2001-12-06 2003-06-12 John Severn Optical beam sampling monitor
US6846172B2 (en) * 2002-06-07 2005-01-25 The Procter & Gamble Company Embossing apparatus
US6794631B2 (en) 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US7161170B1 (en) * 2002-12-12 2007-01-09 Triquint Technology Holding Co. Doped-absorber graded transition enhanced multiplication avalanche photodetector
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7256470B2 (en) * 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8120023B2 (en) * 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
EP1620895B1 (de) * 2003-05-08 2016-03-02 The Science and Technology Facilities Council Sensor zur detektion von beschleunigten teilchen und hochenergiestrahlung
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
EP2335288A4 (de) * 2008-09-15 2013-07-17 Osi Optoelectronics Inc Fischgräten-fotodiode mit dünner aktiver schicht und flacher n+-schicht sowie herstellungsverfahren dafür
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
CN103229306B (zh) 2010-09-22 2016-08-03 第一太阳能有限公司 具有氧化锌镁窗口层的薄膜光伏装置
JP5656571B2 (ja) * 2010-11-09 2015-01-21 株式会社ケーヒン 通信システム
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
CN113314398B (zh) * 2021-05-25 2024-02-06 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110177A (ja) * 1983-11-18 1985-06-15 Fujitsu Ltd 半導体受光装置の製造方法
JPS63224252A (ja) * 1987-02-06 1988-09-19 シーメンス、アクチエンゲゼルシヤフト 導波路−ホトダイオードアレー
JP2942285B2 (ja) * 1989-08-24 1999-08-30 三菱電機株式会社 半導体受光素子
CA2119176C (en) * 1993-03-19 1998-06-23 Masahiro Kobayashi Semiconductor light detecting device
EP0773591A3 (de) * 1995-11-13 1998-09-16 Sumitomo Electric Industries, Ltd. Lichtemittierende und lichtdetektierende Vorrichtung
JPH09289333A (ja) * 1996-04-23 1997-11-04 Mitsubishi Electric Corp 半導体受光素子
US6002142A (en) * 1996-09-30 1999-12-14 Xerox Corporation Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions

Also Published As

Publication number Publication date
US6218684B1 (en) 2001-04-17
JP3484962B2 (ja) 2004-01-06
EP0924776A3 (de) 2000-03-22
EP0924776A2 (de) 1999-06-23
JPH11177121A (ja) 1999-07-02
DE69805048T2 (de) 2002-10-31
EP0924776B1 (de) 2002-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee